JP2002525255A5 - - Google Patents

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Publication number
JP2002525255A5
JP2002525255A5 JP2000570400A JP2000570400A JP2002525255A5 JP 2002525255 A5 JP2002525255 A5 JP 2002525255A5 JP 2000570400 A JP2000570400 A JP 2000570400A JP 2000570400 A JP2000570400 A JP 2000570400A JP 2002525255 A5 JP2002525255 A5 JP 2002525255A5
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JP
Japan
Prior art keywords
germanium
layer
temperature
cvd
predetermined temperature
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JP2000570400A
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English (en)
Japanese (ja)
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JP4486753B2 (ja
JP2002525255A (ja
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Priority claimed from FR9811313A external-priority patent/FR2783254B1/fr
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Publication of JP2002525255A publication Critical patent/JP2002525255A/ja
Publication of JP2002525255A5 publication Critical patent/JP2002525255A5/ja
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Publication of JP4486753B2 publication Critical patent/JP4486753B2/ja
Anticipated expiration legal-status Critical
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JP2000570400A 1998-09-10 1999-09-10 単結晶シリコン基板上に単結晶ゲルマニウム層を得る方法およびそれにより得られた生成物 Expired - Fee Related JP4486753B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR98/11313 1998-09-10
FR9811313A FR2783254B1 (fr) 1998-09-10 1998-09-10 Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
PCT/FR1999/002154 WO2000015885A1 (fr) 1998-09-10 1999-09-10 Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin, et produits obtenus

Publications (3)

Publication Number Publication Date
JP2002525255A JP2002525255A (ja) 2002-08-13
JP2002525255A5 true JP2002525255A5 (enExample) 2010-03-18
JP4486753B2 JP4486753B2 (ja) 2010-06-23

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JP2000570400A Expired - Fee Related JP4486753B2 (ja) 1998-09-10 1999-09-10 単結晶シリコン基板上に単結晶ゲルマニウム層を得る方法およびそれにより得られた生成物

Country Status (6)

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US (1) US6537370B1 (enExample)
EP (1) EP1115920B1 (enExample)
JP (1) JP4486753B2 (enExample)
DE (1) DE69905179D1 (enExample)
FR (1) FR2783254B1 (enExample)
WO (1) WO2000015885A1 (enExample)

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