JP4486753B2 - 単結晶シリコン基板上に単結晶ゲルマニウム層を得る方法およびそれにより得られた生成物 - Google Patents

単結晶シリコン基板上に単結晶ゲルマニウム層を得る方法およびそれにより得られた生成物 Download PDF

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JP4486753B2
JP4486753B2 JP2000570400A JP2000570400A JP4486753B2 JP 4486753 B2 JP4486753 B2 JP 4486753B2 JP 2000570400 A JP2000570400 A JP 2000570400A JP 2000570400 A JP2000570400 A JP 2000570400A JP 4486753 B2 JP4486753 B2 JP 4486753B2
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germanium
layer
temperature
cvd
predetermined temperature
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JP2002525255A5 (enExample
JP2002525255A (ja
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カロリーヌ エルナンデス
イヴ カンピデリ
ダニエル バンサエル
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Orange SA
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France Telecom SA
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2000570400A 1998-09-10 1999-09-10 単結晶シリコン基板上に単結晶ゲルマニウム層を得る方法およびそれにより得られた生成物 Expired - Fee Related JP4486753B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR98/11313 1998-09-10
FR9811313A FR2783254B1 (fr) 1998-09-10 1998-09-10 Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
PCT/FR1999/002154 WO2000015885A1 (fr) 1998-09-10 1999-09-10 Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin, et produits obtenus

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JP2002525255A JP2002525255A (ja) 2002-08-13
JP2002525255A5 JP2002525255A5 (enExample) 2010-03-18
JP4486753B2 true JP4486753B2 (ja) 2010-06-23

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US (1) US6537370B1 (enExample)
EP (1) EP1115920B1 (enExample)
JP (1) JP4486753B2 (enExample)
DE (1) DE69905179D1 (enExample)
FR (1) FR2783254B1 (enExample)
WO (1) WO2000015885A1 (enExample)

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Also Published As

Publication number Publication date
WO2000015885A1 (fr) 2000-03-23
FR2783254A1 (fr) 2000-03-17
DE69905179D1 (de) 2003-03-06
US6537370B1 (en) 2003-03-25
FR2783254B1 (fr) 2000-11-10
JP2002525255A (ja) 2002-08-13
EP1115920B1 (fr) 2003-01-29
EP1115920A1 (fr) 2001-07-18

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