JP2002519852A - ラテラル高電圧トランジスタ - Google Patents

ラテラル高電圧トランジスタ

Info

Publication number
JP2002519852A
JP2002519852A JP2000556403A JP2000556403A JP2002519852A JP 2002519852 A JP2002519852 A JP 2002519852A JP 2000556403 A JP2000556403 A JP 2000556403A JP 2000556403 A JP2000556403 A JP 2000556403A JP 2002519852 A JP2002519852 A JP 2002519852A
Authority
JP
Japan
Prior art keywords
conductivity type
epitaxial layer
voltage transistor
lateral high
trenches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000556403A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002519852A5 (enExample
Inventor
ティハニー イェネ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JP2002519852A publication Critical patent/JP2002519852A/ja
Publication of JP2002519852A5 publication Critical patent/JP2002519852A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000556403A 1998-06-24 1999-03-17 ラテラル高電圧トランジスタ Pending JP2002519852A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19828191A DE19828191C1 (de) 1998-06-24 1998-06-24 Lateral-Hochspannungstransistor
DE19828191.9 1998-06-24
PCT/DE1999/000761 WO1999067826A1 (de) 1998-06-24 1999-03-17 Lateral-hochspannungstransistor

Publications (2)

Publication Number Publication Date
JP2002519852A true JP2002519852A (ja) 2002-07-02
JP2002519852A5 JP2002519852A5 (enExample) 2009-02-26

Family

ID=7871901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000556403A Pending JP2002519852A (ja) 1998-06-24 1999-03-17 ラテラル高電圧トランジスタ

Country Status (5)

Country Link
US (1) US6326656B1 (enExample)
EP (1) EP1008184A1 (enExample)
JP (1) JP2002519852A (enExample)
DE (1) DE19828191C1 (enExample)
WO (1) WO1999067826A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123624A (ja) * 2003-10-17 2005-05-12 Agere Systems Inc 改善された性能および信頼性を有する金属酸化物半導体デバイス
JP2009527901A (ja) * 2006-02-16 2009-07-30 フェアチャイルド・セミコンダクター・コーポレーション セルフバイアス電極を有するラテラルパワーデバイス

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JP3804375B2 (ja) * 1999-12-09 2006-08-02 株式会社日立製作所 半導体装置とそれを用いたパワースイッチング駆動システム
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
JP2002100772A (ja) * 2000-07-17 2002-04-05 Toshiba Corp 電力用半導体装置及びその製造方法
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
DE10052007C1 (de) * 2000-10-20 2002-03-07 Infineon Technologies Ag Halbleiterbauelement mit durchgehenden Kompensationszonen
US7211846B2 (en) 2000-10-20 2007-05-01 Infineon Technologies Ag Transistor having compensation zones enabling a low on-resistance and a high reverse voltage
DE10052170C2 (de) * 2000-10-20 2002-10-31 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement
KR100340925B1 (ko) * 2000-11-04 2002-06-20 오길록 고주파용 전력소자 및 그의 제조 방법
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6713813B2 (en) 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
DE10114788C1 (de) * 2001-03-26 2002-06-20 Infineon Technologies Ag Halbleiterbauelement
KR100393201B1 (ko) * 2001-04-16 2003-07-31 페어차일드코리아반도체 주식회사 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
DE10310552B4 (de) * 2003-03-11 2014-01-23 Infineon Technologies Ag Feldeffekttransistor und Halbleiterchip mit diesem Feldeffekttransistor
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
FI20055057L (fi) * 2004-05-11 2005-11-12 Artto Aurola Puolijohdelaite
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
DE102005012217B4 (de) * 2005-03-15 2007-02-22 Infineon Technologies Austria Ag Lateraler MISFET und Verfahren zur Herstellung desselben
US7504306B2 (en) 2005-04-06 2009-03-17 Fairchild Semiconductor Corporation Method of forming trench gate field effect transistor with recessed mesas
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
DE102005042868B4 (de) * 2005-09-08 2009-07-23 Infineon Technologies Ag Feldeffektleistungsbauteil mit integrierter CMOS-Struktur und Verfahren zur Herstellung desselben
DE102005046007B4 (de) * 2005-09-26 2018-06-07 Infineon Technologies Ag Laterales Kompensationshalbleiterbauteil mit gekoppelten Kompensationszellen
US7554137B2 (en) 2005-10-25 2009-06-30 Infineon Technologies Austria Ag Power semiconductor component with charge compensation structure and method for the fabrication thereof
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP4625793B2 (ja) * 2006-09-08 2011-02-02 株式会社東芝 半導体デバイス
DE102006047489B9 (de) * 2006-10-05 2013-01-17 Infineon Technologies Austria Ag Halbleiterbauelement
WO2009039441A1 (en) 2007-09-21 2009-03-26 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN102569382B (zh) * 2010-12-09 2014-04-23 旺宏电子股份有限公司 金属氧化半导体元件及其形成方法
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN111640785B (zh) * 2020-06-12 2021-09-07 电子科技大学 一种具有多沟槽的ligbt器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218768A (ja) * 1985-07-17 1987-01-27 Tdk Corp 高耐圧縦形半導体装置及びその製造方法
DE4107909A1 (de) * 1990-03-20 1991-09-26 Mitsubishi Electric Corp Halbleitervorrichtung und herstellungsverfahren hierfuer
US5111254A (en) * 1990-08-17 1992-05-05 Gte Laboratories Incorporated Floating gate array transistors
JPH077154A (ja) * 1993-03-25 1995-01-10 Siemens Ag パワーｍｏｓｆｅｔ
JPH07130996A (ja) * 1993-06-30 1995-05-19 Toshiba Corp 高耐圧半導体素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4811075A (en) * 1987-04-24 1989-03-07 Power Integrations, Inc. High voltage MOS transistors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218768A (ja) * 1985-07-17 1987-01-27 Tdk Corp 高耐圧縦形半導体装置及びその製造方法
DE4107909A1 (de) * 1990-03-20 1991-09-26 Mitsubishi Electric Corp Halbleitervorrichtung und herstellungsverfahren hierfuer
US5111254A (en) * 1990-08-17 1992-05-05 Gte Laboratories Incorporated Floating gate array transistors
JPH077154A (ja) * 1993-03-25 1995-01-10 Siemens Ag パワーｍｏｓｆｅｔ
JPH07130996A (ja) * 1993-06-30 1995-05-19 Toshiba Corp 高耐圧半導体素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123624A (ja) * 2003-10-17 2005-05-12 Agere Systems Inc 改善された性能および信頼性を有する金属酸化物半導体デバイス
JP2009527901A (ja) * 2006-02-16 2009-07-30 フェアチャイルド・セミコンダクター・コーポレーション セルフバイアス電極を有するラテラルパワーデバイス

Also Published As

Publication number Publication date
US6326656B1 (en) 2001-12-04
WO1999067826A1 (de) 1999-12-29
DE19828191C1 (de) 1999-07-29
EP1008184A1 (de) 2000-06-14

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