DE19828191C1 - Lateral-Hochspannungstransistor - Google Patents

Lateral-Hochspannungstransistor

Info

Publication number
DE19828191C1
DE19828191C1 DE19828191A DE19828191A DE19828191C1 DE 19828191 C1 DE19828191 C1 DE 19828191C1 DE 19828191 A DE19828191 A DE 19828191A DE 19828191 A DE19828191 A DE 19828191A DE 19828191 C1 DE19828191 C1 DE 19828191C1
Authority
DE
Germany
Prior art keywords
trenches
epitaxial layer
voltage transistor
lateral high
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19828191A
Other languages
German (de)
English (en)
Inventor
Jenoe Dr Tihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19828191A priority Critical patent/DE19828191C1/de
Priority to PCT/DE1999/000761 priority patent/WO1999067826A1/de
Priority to JP2000556403A priority patent/JP2002519852A/ja
Priority to EP99913117A priority patent/EP1008184A1/de
Application granted granted Critical
Publication of DE19828191C1 publication Critical patent/DE19828191C1/de
Priority to US09/511,813 priority patent/US6326656B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19828191A 1998-06-24 1998-06-24 Lateral-Hochspannungstransistor Expired - Fee Related DE19828191C1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19828191A DE19828191C1 (de) 1998-06-24 1998-06-24 Lateral-Hochspannungstransistor
PCT/DE1999/000761 WO1999067826A1 (de) 1998-06-24 1999-03-17 Lateral-hochspannungstransistor
JP2000556403A JP2002519852A (ja) 1998-06-24 1999-03-17 ラテラル高電圧トランジスタ
EP99913117A EP1008184A1 (de) 1998-06-24 1999-03-17 Lateral-hochspannungstransistor
US09/511,813 US6326656B1 (en) 1998-06-24 2000-02-24 Lateral high-voltage transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19828191A DE19828191C1 (de) 1998-06-24 1998-06-24 Lateral-Hochspannungstransistor

Publications (1)

Publication Number Publication Date
DE19828191C1 true DE19828191C1 (de) 1999-07-29

Family

ID=7871901

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19828191A Expired - Fee Related DE19828191C1 (de) 1998-06-24 1998-06-24 Lateral-Hochspannungstransistor

Country Status (5)

Country Link
US (1) US6326656B1 (enExample)
EP (1) EP1008184A1 (enExample)
JP (1) JP2002519852A (enExample)
DE (1) DE19828191C1 (enExample)
WO (1) WO1999067826A1 (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10052007C1 (de) * 2000-10-20 2002-03-07 Infineon Technologies Ag Halbleiterbauelement mit durchgehenden Kompensationszonen
DE10052170A1 (de) * 2000-10-20 2002-05-08 Infineon Technologies Ag Halbleiterbauelement
DE10114788C1 (de) * 2001-03-26 2002-06-20 Infineon Technologies Ag Halbleiterbauelement
DE102005012217A1 (de) * 2005-03-15 2006-09-21 Infineon Technologies Austria Ag Lateraler MISFET und Verfahren zur Herstellung desselben
DE102005042868A1 (de) * 2005-09-08 2007-03-29 Infineon Technologies Ag Feldeffektleistungsbauteil mit integraler CMOS-Struktur und Verfahren zur Herstellung desselben
DE102005046007A1 (de) * 2005-09-26 2007-04-12 Infineon Technologies Ag Laterales Kompensationshalbleiterbauteil mit gekoppelten Kompensationszellen und Verfahren zu seiner Herstellung
US7211846B2 (en) 2000-10-20 2007-05-01 Infineon Technologies Ag Transistor having compensation zones enabling a low on-resistance and a high reverse voltage
US7554137B2 (en) 2005-10-25 2009-06-30 Infineon Technologies Austria Ag Power semiconductor component with charge compensation structure and method for the fabrication thereof
DE102006047489B4 (de) * 2006-10-05 2011-07-28 Infineon Technologies Austria Ag Halbleiterbauelement

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JP3804375B2 (ja) * 1999-12-09 2006-08-02 株式会社日立製作所 半導体装置とそれを用いたパワースイッチング駆動システム
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
JP2002100772A (ja) * 2000-07-17 2002-04-05 Toshiba Corp 電力用半導体装置及びその製造方法
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
KR100340925B1 (ko) * 2000-11-04 2002-06-20 오길록 고주파용 전력소자 및 그의 제조 방법
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6713813B2 (en) 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100393201B1 (ko) * 2001-04-16 2003-07-31 페어차일드코리아반도체 주식회사 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
DE10310552B4 (de) * 2003-03-11 2014-01-23 Infineon Technologies Ag Feldeffekttransistor und Halbleiterchip mit diesem Feldeffekttransistor
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7005703B2 (en) * 2003-10-17 2006-02-28 Agere Systems Inc. Metal-oxide-semiconductor device having improved performance and reliability
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
FI20055057A7 (fi) * 2004-05-11 2005-11-12 Artto Aurola Puolijohdelaite
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
CN101185169B (zh) 2005-04-06 2010-08-18 飞兆半导体公司 沟栅场效应晶体管及其形成方法
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
US7473976B2 (en) * 2006-02-16 2009-01-06 Fairchild Semiconductor Corporation Lateral power transistor with self-biasing electrodes
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP4625793B2 (ja) * 2006-09-08 2011-02-02 株式会社東芝 半導体デバイス
EP2208229A4 (en) 2007-09-21 2011-03-16 Fairchild Semiconductor SUPER TRANSITION STRUCTURES FOR PERFORMANCE ARRANGEMENTS AND MANUFACTURING PROCESSES
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN102569382B (zh) * 2010-12-09 2014-04-23 旺宏电子股份有限公司 金属氧化半导体元件及其形成方法
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN111640785B (zh) * 2020-06-12 2021-09-07 电子科技大学 一种具有多沟槽的ligbt器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US4811075A (en) * 1987-04-24 1989-03-07 Power Integrations, Inc. High voltage MOS transistors
DE4309764A1 (de) * 1993-03-25 1994-09-29 Siemens Ag Leistungs-MOSFET

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JPS6218768A (ja) * 1985-07-17 1987-01-27 Tdk Corp 高耐圧縦形半導体装置及びその製造方法
JP2597412B2 (ja) * 1990-03-20 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
US5111254A (en) * 1990-08-17 1992-05-05 Gte Laboratories Incorporated Floating gate array transistors
JP3400025B2 (ja) * 1993-06-30 2003-04-28 株式会社東芝 高耐圧半導体素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US4811075A (en) * 1987-04-24 1989-03-07 Power Integrations, Inc. High voltage MOS transistors
DE4309764A1 (de) * 1993-03-25 1994-09-29 Siemens Ag Leistungs-MOSFET

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7211846B2 (en) 2000-10-20 2007-05-01 Infineon Technologies Ag Transistor having compensation zones enabling a low on-resistance and a high reverse voltage
DE10052170A1 (de) * 2000-10-20 2002-05-08 Infineon Technologies Ag Halbleiterbauelement
DE10052170C2 (de) * 2000-10-20 2002-10-31 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement
DE10052007C1 (de) * 2000-10-20 2002-03-07 Infineon Technologies Ag Halbleiterbauelement mit durchgehenden Kompensationszonen
DE10114788C1 (de) * 2001-03-26 2002-06-20 Infineon Technologies Ag Halbleiterbauelement
DE102005012217A1 (de) * 2005-03-15 2006-09-21 Infineon Technologies Austria Ag Lateraler MISFET und Verfahren zur Herstellung desselben
DE102005012217B4 (de) * 2005-03-15 2007-02-22 Infineon Technologies Austria Ag Lateraler MISFET und Verfahren zur Herstellung desselben
US7821064B2 (en) 2005-03-15 2010-10-26 Infineon Technologies Austria Ag Lateral MISFET and method for fabricating it
DE102005042868A1 (de) * 2005-09-08 2007-03-29 Infineon Technologies Ag Feldeffektleistungsbauteil mit integraler CMOS-Struktur und Verfahren zur Herstellung desselben
DE102005042868B4 (de) * 2005-09-08 2009-07-23 Infineon Technologies Ag Feldeffektleistungsbauteil mit integrierter CMOS-Struktur und Verfahren zur Herstellung desselben
DE102005046007A1 (de) * 2005-09-26 2007-04-12 Infineon Technologies Ag Laterales Kompensationshalbleiterbauteil mit gekoppelten Kompensationszellen und Verfahren zu seiner Herstellung
DE102005046007B4 (de) 2005-09-26 2018-06-07 Infineon Technologies Ag Laterales Kompensationshalbleiterbauteil mit gekoppelten Kompensationszellen
US7554137B2 (en) 2005-10-25 2009-06-30 Infineon Technologies Austria Ag Power semiconductor component with charge compensation structure and method for the fabrication thereof
DE102006047489B4 (de) * 2006-10-05 2011-07-28 Infineon Technologies Austria Ag Halbleiterbauelement
DE102006047489B9 (de) * 2006-10-05 2013-01-17 Infineon Technologies Austria Ag Halbleiterbauelement

Also Published As

Publication number Publication date
EP1008184A1 (de) 2000-06-14
WO1999067826A1 (de) 1999-12-29
US6326656B1 (en) 2001-12-04
JP2002519852A (ja) 2002-07-02

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
R081 Change of applicant/patentee

Owner name: INFINEON TECHNOLOGIES AG, DE

Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT, 80333 MUENCHEN, DE

Effective date: 20111107

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee