WO1999035695A1 - Soi-hochspannungsschalter - Google Patents
Soi-hochspannungsschalter Download PDFInfo
- Publication number
- WO1999035695A1 WO1999035695A1 PCT/DE1998/003592 DE9803592W WO9935695A1 WO 1999035695 A1 WO1999035695 A1 WO 1999035695A1 DE 9803592 W DE9803592 W DE 9803592W WO 9935695 A1 WO9935695 A1 WO 9935695A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voltage switch
- zone
- trenches
- drain
- switch according
- Prior art date
Links
- 239000012212 insulator Substances 0.000 title claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 title description 3
- 239000010703 silicon Substances 0.000 title description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000002800 charge carrier Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98965105A EP1048079A1 (de) | 1998-01-09 | 1998-12-07 | Soi-hochspannungsschalter |
JP2000527979A JP2002501308A (ja) | 1998-01-09 | 1998-12-07 | Soi高電圧スイッチ |
US09/600,004 US6445038B1 (en) | 1998-01-09 | 1998-12-07 | Silicon on insulator high-voltage switch |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19800647A DE19800647C1 (de) | 1998-01-09 | 1998-01-09 | SOI-Hochspannungsschalter |
DE19800647.0 | 1998-01-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999035695A1 true WO1999035695A1 (de) | 1999-07-15 |
Family
ID=7854273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1998/003592 WO1999035695A1 (de) | 1998-01-09 | 1998-12-07 | Soi-hochspannungsschalter |
Country Status (5)
Country | Link |
---|---|
US (1) | US6445038B1 (de) |
EP (1) | EP1048079A1 (de) |
JP (1) | JP2002501308A (de) |
DE (1) | DE19800647C1 (de) |
WO (1) | WO1999035695A1 (de) |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001071815A2 (en) * | 2000-03-23 | 2001-09-27 | Koninklijke Philips Electronics N.V. | High voltage semiconductor device having a field plate arrangement |
WO2002078090A2 (en) * | 2001-03-23 | 2002-10-03 | Koninklijke Philips Electronics N.V. | Field-effect transistor structure and method of manufacture |
WO2002069408A3 (en) * | 2001-02-27 | 2002-12-05 | Koninkl Philips Electronics Nv | Soi ldmos transistor having a field plate and method of making the same |
WO2003038905A2 (en) * | 2001-11-01 | 2003-05-08 | Koninklijke Philips Electronics N.V. | Lateral soi field-effect transistor |
WO2003038906A2 (en) * | 2001-11-01 | 2003-05-08 | Koninklijke Philips Electronics N.V. | Lateral soi field-effect transistor and method of making the same |
KR100393201B1 (ko) * | 2001-04-16 | 2003-07-31 | 페어차일드코리아반도체 주식회사 | 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터 |
US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
US8954902B2 (en) | 2005-07-11 | 2015-02-10 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US9024700B2 (en) | 2008-02-28 | 2015-05-05 | Peregrine Semiconductor Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
US9087899B2 (en) | 2005-07-11 | 2015-07-21 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US9130564B2 (en) | 2005-07-11 | 2015-09-08 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink |
US9177737B2 (en) | 2007-04-26 | 2015-11-03 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
US9225378B2 (en) | 2001-10-10 | 2015-12-29 | Peregrine Semiconductor Corpopration | Switch circuit and method of switching radio frequency signals |
US9369087B2 (en) | 2004-06-23 | 2016-06-14 | Peregrine Semiconductor Corporation | Integrated RF front end with stacked transistor switch |
US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
US9419565B2 (en) | 2013-03-14 | 2016-08-16 | Peregrine Semiconductor Corporation | Hot carrier injection compensation |
US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
US10790390B2 (en) | 2005-07-11 | 2020-09-29 | Psemi Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
US10804892B2 (en) | 2005-07-11 | 2020-10-13 | Psemi Corporation | Circuit and method for controlling charge injection in radio frequency switches |
US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829052B1 (ko) | 1999-06-03 | 2008-05-19 | 제네럴 세미컨덕터, 인코포레이티드 | 전력 mosfet, 이를 형성하는 방법, 및 이 방법에의해 형성되는 다른 전력 mosfet |
US6627949B2 (en) | 2000-06-02 | 2003-09-30 | General Semiconductor, Inc. | High voltage power MOSFET having low on-resistance |
EP1162664A1 (de) * | 2000-06-09 | 2001-12-12 | Motorola, Inc. | Laterale Halbleiteranordnung mit niedrigem Einschaltwiderstand und Verfahren zu deren Herstellung |
DE10321222A1 (de) * | 2003-05-12 | 2004-12-23 | Infineon Technologies Ag | Halbleiterbauelement |
US7812369B2 (en) * | 2003-09-09 | 2010-10-12 | The Regents Of The University Of California | Fabrication of single or multiple gate field plates |
US7501669B2 (en) * | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
US7573078B2 (en) | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
US20060175670A1 (en) * | 2005-02-10 | 2006-08-10 | Nec Compound Semiconductor Device, Ltd. | Field effect transistor and method of manufacturing a field effect transistor |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
US20060255401A1 (en) * | 2005-05-11 | 2006-11-16 | Yang Robert K | Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures |
DE102005023026B4 (de) * | 2005-05-13 | 2016-06-16 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Plattenkondensator-Struktur |
US20070012983A1 (en) * | 2005-07-15 | 2007-01-18 | Yang Robert K | Terminations for semiconductor devices with floating vertical series capacitive structures |
US7592211B2 (en) | 2006-01-17 | 2009-09-22 | Cree, Inc. | Methods of fabricating transistors including supported gate electrodes |
US7709269B2 (en) | 2006-01-17 | 2010-05-04 | Cree, Inc. | Methods of fabricating transistors including dielectrically-supported gate electrodes |
JP5307973B2 (ja) * | 2006-02-24 | 2013-10-02 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP4989085B2 (ja) * | 2006-02-24 | 2012-08-01 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
KR100770539B1 (ko) * | 2006-08-11 | 2007-10-25 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
US8823057B2 (en) | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
JP5105160B2 (ja) | 2006-11-13 | 2012-12-19 | クリー インコーポレイテッド | トランジスタ |
US7692263B2 (en) * | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
US7714407B2 (en) * | 2007-08-29 | 2010-05-11 | Cambridge Semiconductor Limited | Semiconductor device and method of forming a semiconductor device |
US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
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CN111640785B (zh) * | 2020-06-12 | 2021-09-07 | 电子科技大学 | 一种具有多沟槽的ligbt器件 |
CN111640787B (zh) * | 2020-06-12 | 2021-08-24 | 电子科技大学 | 一种具有多沟槽的ldmos器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6218768A (ja) * | 1985-07-17 | 1987-01-27 | Tdk Corp | 高耐圧縦形半導体装置及びその製造方法 |
US5111254A (en) * | 1990-08-17 | 1992-05-05 | Gte Laboratories Incorporated | Floating gate array transistors |
EP0526939A1 (de) * | 1991-08-07 | 1993-02-10 | Koninklijke Philips Electronics N.V. | Lateraler, bipolarer Halbleitertransistor mit isolierter Steuerelektrode |
EP0638938A2 (de) * | 1993-08-10 | 1995-02-15 | Koninklijke Philips Electronics N.V. | SOI-Transistor mit verbesserer Hochquelle |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4980742A (en) * | 1988-05-31 | 1990-12-25 | Siemens Aktiengesellschaft | Turn-off thyristor |
US5246870A (en) | 1991-02-01 | 1993-09-21 | North American Philips Corporation | Method for making an improved high voltage thin film transistor having a linear doping profile |
DE69209678T2 (de) * | 1991-02-01 | 1996-10-10 | Philips Electronics Nv | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
US5365102A (en) * | 1993-07-06 | 1994-11-15 | North Carolina State University | Schottky barrier rectifier with MOS trench |
JPH09139480A (ja) * | 1995-01-27 | 1997-05-27 | Toshiba Corp | 薄膜キャパシタおよびこれを用いた半導体記憶装置 |
US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
US6078090A (en) * | 1997-04-02 | 2000-06-20 | Siliconix Incorporated | Trench-gated Schottky diode with integral clamping diode |
KR0175277B1 (ko) * | 1996-02-29 | 1999-02-01 | 김광호 | 중첩된 필드플레이트구조를 갖는 전력반도체장치 및 그의 제조방법 |
US6163052A (en) * | 1997-04-04 | 2000-12-19 | Advanced Micro Devices, Inc. | Trench-gated vertical combination JFET and MOSFET devices |
JP3850146B2 (ja) * | 1998-07-07 | 2006-11-29 | 三菱電機株式会社 | 分離構造とその分離構造を備える半導体装置 |
-
1998
- 1998-01-09 DE DE19800647A patent/DE19800647C1/de not_active Expired - Lifetime
- 1998-12-07 WO PCT/DE1998/003592 patent/WO1999035695A1/de not_active Application Discontinuation
- 1998-12-07 US US09/600,004 patent/US6445038B1/en not_active Expired - Lifetime
- 1998-12-07 EP EP98965105A patent/EP1048079A1/de not_active Withdrawn
- 1998-12-07 JP JP2000527979A patent/JP2002501308A/ja active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6218768A (ja) * | 1985-07-17 | 1987-01-27 | Tdk Corp | 高耐圧縦形半導体装置及びその製造方法 |
US5111254A (en) * | 1990-08-17 | 1992-05-05 | Gte Laboratories Incorporated | Floating gate array transistors |
EP0526939A1 (de) * | 1991-08-07 | 1993-02-10 | Koninklijke Philips Electronics N.V. | Lateraler, bipolarer Halbleitertransistor mit isolierter Steuerelektrode |
EP0638938A2 (de) * | 1993-08-10 | 1995-02-15 | Koninklijke Philips Electronics N.V. | SOI-Transistor mit verbesserer Hochquelle |
Non-Patent Citations (3)
Title |
---|
LEVINSON M: "A HIGH VOLTAGE BULK MESFET USING IN-SITU JUNCTIONS", PROCEEDINGS OF THE POWER MODULATOR SYMPOSIUM, SAN DIEGO, JUNE 26 - 28, 1990, no. SYMP. 19, 26 June 1990 (1990-06-26), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 347 - 351, XP000207405 * |
NGUYEN Q V ET AL: "HIGH VOLTAGE SEMICONDUCTOR-METAL EUTECTIC TRANSISTORS FOR PULSED POWER SWITCHING APPLICATIONS", PROCEEDINGS OF THE POWER MODULATOR SYMPOSIUM, MYRTLE BEACH, SOUTH CAROLINA, JUNE 23 - 25, 1992, no. SYMP. 20, 23 June 1992 (1992-06-23), INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, pages 274 - 277, XP000348416 * |
PATENT ABSTRACTS OF JAPAN vol. 011, no. 190 (E - 517) 18 June 1987 (1987-06-18) * |
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Also Published As
Publication number | Publication date |
---|---|
JP2002501308A (ja) | 2002-01-15 |
EP1048079A1 (de) | 2000-11-02 |
US6445038B1 (en) | 2002-09-03 |
DE19800647C1 (de) | 1999-05-27 |
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