JP2002511190A - シリコン太陽電池および他のデバイス用の自己ドーピング陰極および陽極のための方法および装置 - Google Patents
シリコン太陽電池および他のデバイス用の自己ドーピング陰極および陽極のための方法および装置Info
- Publication number
- JP2002511190A JP2002511190A JP54841698A JP54841698A JP2002511190A JP 2002511190 A JP2002511190 A JP 2002511190A JP 54841698 A JP54841698 A JP 54841698A JP 54841698 A JP54841698 A JP 54841698A JP 2002511190 A JP2002511190 A JP 2002511190A
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- metal
- alloy
- semiconductor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010703 silicon Substances 0.000 title claims abstract description 200
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 196
- 238000000034 method Methods 0.000 title claims abstract description 112
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 185
- 239000002019 doping agent Substances 0.000 claims abstract description 144
- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 114
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 86
- 239000000956 alloy Substances 0.000 claims abstract description 86
- 230000005496 eutectics Effects 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000007787 solid Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims description 94
- 239000004332 silver Substances 0.000 claims description 94
- 239000004065 semiconductor Substances 0.000 claims description 61
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 58
- 229910052787 antimony Inorganic materials 0.000 claims description 57
- 229910052698 phosphorus Inorganic materials 0.000 claims description 49
- 239000011574 phosphorus Substances 0.000 claims description 48
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 47
- 229910052782 aluminium Inorganic materials 0.000 claims description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 35
- 229910052733 gallium Inorganic materials 0.000 claims description 28
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000012071 phase Substances 0.000 claims description 18
- 230000000737 periodic effect Effects 0.000 claims description 17
- 238000007650 screen-printing Methods 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 239000007791 liquid phase Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 229910021478 group 5 element Inorganic materials 0.000 claims 5
- 230000005855 radiation Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 abstract description 67
- 230000008569 process Effects 0.000 abstract description 27
- 239000000203 mixture Substances 0.000 abstract description 23
- 150000002739 metals Chemical class 0.000 abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052737 gold Inorganic materials 0.000 abstract description 7
- 239000010931 gold Substances 0.000 abstract description 7
- 238000004943 liquid phase epitaxy Methods 0.000 abstract description 6
- 230000007423 decrease Effects 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 229910021471 metal-silicon alloy Inorganic materials 0.000 abstract description 2
- 239000000155 melt Substances 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 88
- 210000004027 cell Anatomy 0.000 description 37
- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 31
- 125000004429 atom Chemical group 0.000 description 23
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 16
- 239000007788 liquid Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000005275 alloying Methods 0.000 description 11
- 238000010587 phase diagram Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000000523 sample Substances 0.000 description 9
- 230000008018 melting Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 7
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910001245 Sb alloy Inorganic materials 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 229910001316 Ag alloy Inorganic materials 0.000 description 5
- 229910000676 Si alloy Inorganic materials 0.000 description 5
- ADPASYSHGWVVQI-UHFFFAOYSA-N [Ti].[Ag].[Sb] Chemical compound [Ti].[Ag].[Sb] ADPASYSHGWVVQI-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 210000001787 dendrite Anatomy 0.000 description 5
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 125000004437 phosphorous atom Chemical group 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- -1 Thus Chemical compound 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000002140 antimony alloy Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000012768 molten material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- SDTHIDMOBRXVOQ-UHFFFAOYSA-N 5-[bis(2-chloroethyl)amino]-6-methyl-1h-pyrimidine-2,4-dione Chemical compound CC=1NC(=O)NC(=O)C=1N(CCCl)CCCl SDTHIDMOBRXVOQ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000238558 Eucarida Species 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- MZEUCMUKIQMCTQ-UHFFFAOYSA-N [Sb].[Si].[Ag] Chemical compound [Sb].[Si].[Ag] MZEUCMUKIQMCTQ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WTDRDQBEARUVNC-LURJTMIESA-N L-DOPA Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-LURJTMIESA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- RZJQYRCNDBMIAG-UHFFFAOYSA-N [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] Chemical class [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] RZJQYRCNDBMIAG-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000002768 anti-recombination Effects 0.000 description 1
- PFZWDJVEHNQTJI-UHFFFAOYSA-N antimony titanium Chemical compound [Ti].[Sb] PFZWDJVEHNQTJI-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- RJAVVKVGAZUUIE-UHFFFAOYSA-N stibanylidynephosphane Chemical compound [Sb]#P RJAVVKVGAZUUIE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4567397P | 1997-05-06 | 1997-05-06 | |
| US60/045,673 | 1997-05-06 | ||
| US09/072,411 | 1998-05-04 | ||
| US09/072,411 US6180869B1 (en) | 1997-05-06 | 1998-05-04 | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
| PCT/US1998/009190 WO1998050944A2 (en) | 1997-05-06 | 1998-05-05 | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002511190A true JP2002511190A (ja) | 2002-04-09 |
| JP2002511190A5 JP2002511190A5 (enExample) | 2005-05-12 |
Family
ID=26723069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54841698A Pending JP2002511190A (ja) | 1997-05-06 | 1998-05-05 | シリコン太陽電池および他のデバイス用の自己ドーピング陰極および陽極のための方法および装置 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6180869B1 (enExample) |
| EP (3) | EP2149916A2 (enExample) |
| JP (1) | JP2002511190A (enExample) |
| KR (1) | KR20010012327A (enExample) |
| CN (1) | CN1230920C (enExample) |
| AU (1) | AU7288498A (enExample) |
| BR (1) | BR9809237A (enExample) |
| CA (1) | CA2287834C (enExample) |
| TW (1) | TW418543B (enExample) |
| WO (1) | WO1998050944A2 (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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- 1998-05-05 EP EP09172857A patent/EP2149917A2/en not_active Withdrawn
- 1998-05-05 CN CNB988058006A patent/CN1230920C/zh not_active Expired - Fee Related
- 1998-05-05 WO PCT/US1998/009190 patent/WO1998050944A2/en not_active Ceased
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- 1998-05-05 CA CA002287834A patent/CA2287834C/en not_active Expired - Fee Related
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- 1998-05-05 KR KR1019997010279A patent/KR20010012327A/ko not_active Withdrawn
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| JP2006525658A (ja) * | 2003-04-29 | 2006-11-09 | コミツサリア タ レネルジー アトミーク | 自己整合金属被膜付き半導体デバイスの製造方法 |
| JP2006310368A (ja) * | 2005-04-26 | 2006-11-09 | Shin Etsu Handotai Co Ltd | 太陽電池の製造方法及び太陽電池 |
| WO2006117975A1 (ja) * | 2005-04-26 | 2006-11-09 | Shin-Etsu Handotai Co., Ltd. | 太陽電池の製造方法及び太陽電池 |
| JP2009509353A (ja) * | 2005-09-27 | 2009-03-05 | エルジー・ケム・リミテッド | ｐ−ｎ接合半導体素子の埋込み接触電極の形成方法及びこれを用いた光電子半導体素子 |
| JP2010503190A (ja) * | 2006-09-04 | 2010-01-28 | フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | 半導体基板に対して同時にドーピングおよび酸化を実行する方法および当該方法の利用 |
| JP2016066800A (ja) * | 2007-07-20 | 2016-04-28 | アルファ・メタルズ・インコーポレイテッドAlpha Metals, Inc. | 基板上に導体が配列された装置および導体を形成する方法 |
| JP2011512661A (ja) * | 2008-02-15 | 2011-04-21 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 単結晶ｎ型シリコン太陽電池の製造方法並びに当該方法に従って製造された太陽電池 |
| US8728922B2 (en) | 2008-02-15 | 2014-05-20 | SolarWorld Industries-Thueringen GmbH | Method for producing monocrystalline N-silicon solar cells, as well as a solar cell produced according to such a method |
| JP2011529276A (ja) * | 2008-07-28 | 2011-12-01 | デイ４ エネルギー インコーポレイテッド | 低温精密エッチ・バック及び不動態化プロセスで製造された選択エミッタを有する結晶シリコンｐｖ電池 |
| WO2019003638A1 (ja) | 2017-06-26 | 2019-01-03 | 信越化学工業株式会社 | 高効率裏面電極型太陽電池及びその製造方法 |
| KR20200023301A (ko) | 2017-06-26 | 2020-03-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 고효율 이면전극형 태양전지 및 그 제조방법 |
| US11984522B2 (en) | 2017-06-26 | 2024-05-14 | Shin-Etsu Chemical Co., Ltd. | High-efficiency backside contact solar cell and method for manufacturing thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010012327A (ko) | 2001-02-15 |
| CN1230920C (zh) | 2005-12-07 |
| TW418543B (en) | 2001-01-11 |
| WO1998050944A3 (en) | 1999-05-27 |
| AU7288498A (en) | 1998-11-27 |
| EP0980590A2 (en) | 2000-02-23 |
| BR9809237A (pt) | 2001-02-20 |
| CN1272226A (zh) | 2000-11-01 |
| CA2287834A1 (en) | 1998-11-12 |
| WO1998050944A2 (en) | 1998-11-12 |
| EP2149916A2 (en) | 2010-02-03 |
| CA2287834C (en) | 2005-07-05 |
| US6180869B1 (en) | 2001-01-30 |
| EP2149917A2 (en) | 2010-02-03 |
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