TW418543B - Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices - Google Patents
Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices Download PDFInfo
- Publication number
- TW418543B TW418543B TW087106941A TW87106941A TW418543B TW 418543 B TW418543 B TW 418543B TW 087106941 A TW087106941 A TW 087106941A TW 87106941 A TW87106941 A TW 87106941A TW 418543 B TW418543 B TW 418543B
- Authority
- TW
- Taiwan
- Prior art keywords
- dopant
- metal
- semiconductor
- alloy
- scope
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 150
- 239000010703 silicon Substances 0.000 title claims abstract description 145
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 238000000034 method Methods 0.000 title claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 114
- 229910052751 metal Inorganic materials 0.000 claims abstract description 113
- 239000002019 doping agent Substances 0.000 claims abstract description 112
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 92
- 239000000956 alloy Substances 0.000 claims abstract description 92
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- 239000004065 semiconductor Substances 0.000 claims description 64
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- 239000004332 silver Substances 0.000 claims description 42
- 238000011049 filling Methods 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 28
- 229910052787 antimony Inorganic materials 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052733 gallium Inorganic materials 0.000 claims description 24
- 230000008929 regeneration Effects 0.000 claims description 24
- 238000011069 regeneration method Methods 0.000 claims description 24
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 16
- 230000000737 periodic effect Effects 0.000 claims description 16
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 15
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- 238000000576 coating method Methods 0.000 claims description 14
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 230000002079 cooperative effect Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000007791 liquid phase Substances 0.000 claims description 9
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- 229910021478 group 5 element Inorganic materials 0.000 claims 5
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- 229910017982 Ag—Si Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229910001316 Ag alloy Inorganic materials 0.000 description 6
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- 229910000676 Si alloy Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
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- 150000002739 metals Chemical class 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 229910001092 metal group alloy Inorganic materials 0.000 description 5
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- 239000011521 glass Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 229910002699 Ag–S Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910017802 Sb—Ag Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- -1 aluminum-silver Chemical compound 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 235000012054 meals Nutrition 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
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- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910000691 Re alloy Inorganic materials 0.000 description 1
- 229910018530 Si-Ag Inorganic materials 0.000 description 1
- 229910008383 Si—Ag Inorganic materials 0.000 description 1
- 229910000845 Tc alloy Inorganic materials 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- 208000025865 Ulcer Diseases 0.000 description 1
- 241000276425 Xiphophorus maculatus Species 0.000 description 1
- RZJQYRCNDBMIAG-UHFFFAOYSA-N [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] Chemical class [Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Cu].[Zn].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Ag].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn].[Sn] RZJQYRCNDBMIAG-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
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- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002768 anti-recombination Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
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- 150000001793 charged compounds Chemical class 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
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- 239000000155 melt Substances 0.000 description 1
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- 238000004452 microanalysis Methods 0.000 description 1
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- 239000007773 negative electrode material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- 238000005496 tempering Methods 0.000 description 1
- 231100000397 ulcer Toxicity 0.000 description 1
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- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
- H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4567397P | 1997-05-06 | 1997-05-06 | |
| US09/072,411 US6180869B1 (en) | 1997-05-06 | 1998-05-04 | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW418543B true TW418543B (en) | 2001-01-11 |
Family
ID=26723069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087106941A TW418543B (en) | 1997-05-06 | 1998-06-15 | Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6180869B1 (enExample) |
| EP (3) | EP0980590A2 (enExample) |
| JP (1) | JP2002511190A (enExample) |
| KR (1) | KR20010012327A (enExample) |
| CN (1) | CN1230920C (enExample) |
| AU (1) | AU7288498A (enExample) |
| BR (1) | BR9809237A (enExample) |
| CA (1) | CA2287834C (enExample) |
| TW (1) | TW418543B (enExample) |
| WO (1) | WO1998050944A2 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI426615B (zh) * | 2007-12-21 | 2014-02-11 | Jusung Eng Co Ltd | 薄膜型太陽能電池及其製造方法 |
| TWI484645B (zh) * | 2008-09-09 | 2015-05-11 | Palo Alto Res Ct Inc | 具雷射切除凹槽之指叉背接觸矽晶太陽電池及其製造方法 |
Families Citing this family (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6632730B1 (en) | 1999-11-23 | 2003-10-14 | Ebara Solar, Inc. | Method for self-doping contacts to a semiconductor |
| AUPR174800A0 (en) * | 2000-11-29 | 2000-12-21 | Australian National University, The | Semiconductor processing |
| US7828983B2 (en) * | 2001-11-29 | 2010-11-09 | Transform Solar Pty Ltd | Semiconductor texturing process |
| FR2854497B1 (fr) * | 2003-04-29 | 2005-09-02 | Commissariat Energie Atomique | Procede de realisation d'un dispositif semi-conducteur a metallisations auto-alignees |
| US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
| JP4232597B2 (ja) * | 2003-10-10 | 2009-03-04 | 株式会社日立製作所 | シリコン太陽電池セルとその製造方法 |
| JP2005135942A (ja) * | 2003-10-28 | 2005-05-26 | Canon Inc | 電極配設方法 |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
| US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
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- 1998-05-04 US US09/072,411 patent/US6180869B1/en not_active Expired - Lifetime
- 1998-05-05 CN CNB988058006A patent/CN1230920C/zh not_active Expired - Fee Related
- 1998-05-05 AU AU72884/98A patent/AU7288498A/en not_active Abandoned
- 1998-05-05 JP JP54841698A patent/JP2002511190A/ja active Pending
- 1998-05-05 CA CA002287834A patent/CA2287834C/en not_active Expired - Fee Related
- 1998-05-05 KR KR1019997010279A patent/KR20010012327A/ko not_active Withdrawn
- 1998-05-05 EP EP98920273A patent/EP0980590A2/en not_active Withdrawn
- 1998-05-05 BR BR9809237-5A patent/BR9809237A/pt active Search and Examination
- 1998-05-05 EP EP09172844A patent/EP2149916A2/en not_active Withdrawn
- 1998-05-05 EP EP09172857A patent/EP2149917A2/en not_active Withdrawn
- 1998-05-05 WO PCT/US1998/009190 patent/WO1998050944A2/en not_active Ceased
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI426615B (zh) * | 2007-12-21 | 2014-02-11 | Jusung Eng Co Ltd | 薄膜型太陽能電池及其製造方法 |
| TWI484645B (zh) * | 2008-09-09 | 2015-05-11 | Palo Alto Res Ct Inc | 具雷射切除凹槽之指叉背接觸矽晶太陽電池及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998050944A2 (en) | 1998-11-12 |
| KR20010012327A (ko) | 2001-02-15 |
| AU7288498A (en) | 1998-11-27 |
| WO1998050944A3 (en) | 1999-05-27 |
| CN1272226A (zh) | 2000-11-01 |
| EP0980590A2 (en) | 2000-02-23 |
| CA2287834C (en) | 2005-07-05 |
| EP2149916A2 (en) | 2010-02-03 |
| BR9809237A (pt) | 2001-02-20 |
| US6180869B1 (en) | 2001-01-30 |
| JP2002511190A (ja) | 2002-04-09 |
| CN1230920C (zh) | 2005-12-07 |
| CA2287834A1 (en) | 1998-11-12 |
| EP2149917A2 (en) | 2010-02-03 |
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