JP2002508108A - 有機発光ダイオードを用いた発光ディスプレイ - Google Patents
有機発光ダイオードを用いた発光ディスプレイInfo
- Publication number
- JP2002508108A JP2002508108A JP50479799A JP50479799A JP2002508108A JP 2002508108 A JP2002508108 A JP 2002508108A JP 50479799 A JP50479799 A JP 50479799A JP 50479799 A JP50479799 A JP 50479799A JP 2002508108 A JP2002508108 A JP 2002508108A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductor
- light emitting
- substrate
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004020 conductor Substances 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 239000011368 organic material Substances 0.000 claims abstract description 37
- 239000003989 dielectric material Substances 0.000 claims description 46
- 230000004888 barrier function Effects 0.000 claims description 32
- 239000011159 matrix material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- 238000007789 sealing Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000000670 limiting effect Effects 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 156
- 239000012044 organic layer Substances 0.000 abstract description 5
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000000975 dye Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 230000005465 channeling Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 239000006059 cover glass Substances 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011533 mixed conductor Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1. 基板;その平面状基板上に配置された第1の導電体;第1導電体上に配置 された発光有機材料の層;該発光有機材料層上に配置された第2の導電体;及び 該基板に平行な方向に発光を制限する手段;を有する、有機発光デバイス。 2. 基板がケイ素ウェーハである、請求項1記載のデバイス。 3. ケイ素ウェーハを第1導電体に接続する手段を更に有する、請求項2記載 のデバイス。 4. 第1導電体が平面状になっている、請求項1記載のデバイス。 5. 発光を制限する手段が、誘電材料の層を含む、請求項1記載のデバイス。 6. 発光を制限する手段が誘電材料の複数層を含む、請求項1記載のデバイス 。 7. 誘電材料の複数層は各々、隣接する任意の層の屈折率と異なる屈折率を有 する、請求項6記載のデバイス。 8. 誘電材料の複数層の少なくとも一つは、基板に対してある角度で付着され ている、請求項6記載のデバイス。 9. 誘電材料の複数層の少なくとも一つは、基板に対してある角度で蒸着され ている、請求項6記載のデバイス。 10.誘電材料の複数層の少なくとも一つが形成されるとき、基板は回転してい る、請求項6記載のデバイス。 11.発光を制限する手段が、透明な導体材料の層を含む、請求項1記載のデバ イス。 12.発光を制限する手段が、第1導電体上に配置され発光有機材料の下に配置 された透明導体材料の複数の層を含む、請求項1記載のデバイス。 13.発光を制限する手段が、発光有機材料層の上に配置されている、請求項1 記載のデバイス。 14.第1導電体上に配置された転移層を更に含む、請求項1記載のデバイス。 15.第2導電体上に配置されたバリヤー層を更に含む、請求項1記載のデバイ ス。 16.バリヤー層はダイヤモンド様炭素材を含む、請求項15記載のデバイス。 17.バリヤー層は電子注入体である、請求項15記載のデバイス。 18.第2導電体上に配置されバリヤー層の下に配置されたゲッター層を含む、 請求項15記載のデバイス。 19.バリヤー層上に配置された封止層を更に含む請求項15記載のデバイス。 20.発光有機材料層上に配置され第2導電体の下に配置されたゲッター層を含 む、請求項1記載のデバイス。 21.封止層が加熱接着性封止材を含む、請求項19記載のデバイス。 22.バリヤー層上に配置されたトップカバーを更に含む、請求項15記載のデ バイス。 23.基板が平面状である、請求項1記載のデバイス。 24.ケイ素ウェーハ及び導電性プラグを含む平面状基板であって、該ケイ素ウ ェーハが集積回路を更に含み、該導電性プラグが該集積回路を導電性パッド(con ductor pad)に接続しており、該導電性パッドが該平面状基板の上に重なってい る上記平面状基板; 該導電性パッドの上に重なっている発光性有機材料の層; 該発光性有機材料層の上に重なっている、水と反応し得るゲッター材料の層; 該ゲッター材料層の上に重なっている透明の導電性層; 誘電材料の複数層であって該複数層が各々あらゆる隣接する層と異なる屈折率 を有する上記誘電材料複数層; ダイヤモンド様炭素で形成され、該誘電材料複数層の上に重なっているバリヤ ー層;並びに 該バリヤー層の上に重なっている透明のトップカバー; を有する、有機発光デバイス。 25.ペリメータ(周長,perimeter)及び複数の有機発光デバイスを更に含む 平面状基板であって、複数の有機発光デバイスはそれぞれ複数のドライバーによ って異なる電流又は異なる電圧の状態に置くことができ、また、複数の有機発光 デバイスは、それら複数のドライバーからの信号を受信することができる第1導 電体及び第2導電体を備えており、しかも、複数の有機発光デバイスの間には複 数の間隙が存在する、上記平面状基体; 前記基板の上に重なっているブラック・マトリクスであって前記の複数の有機 発光デバイスの間及びそれらデバイスの各々の周辺に配置されている該マトリク ス;並びに 前記の複数の有機発光デバイスの上に重なっているトップカバー; を備えた、有機発光ディスプレイ。 26.複数のドライバーはそれぞれ、平面状基板の一体部分(切り離せない部分 ,integral part)である、請求項25記載のディスプレイ。 27.複数のドライバーはそれぞれ、平面状基板のペリメータ(周長,perimete r)に接続されている、請求項25記載のディスプレイ。 28.複数の発光デバイスはそれぞれ、第1導体を平面状基板に接続する導電性 プラグを更に含む、請求項25記載のディスプレイ。 29.プラグは平面状にしてある、請求項28記載のディスプレイ。 30.複数の発光デバイスはそれぞれ、平面状基板に平行な方向に発光を制限す る手段を含む、請求項25記載のディスプレイ。 31.発光を制限する手段が、誘電材料の複数層を含む、請求項30記載のディ スプレイ。 32.有機発光デバイスの製法において、平面状基板を用意し;該平面状基板に 第1導体を形成し;第1導体上に配置した有機発光材料層を形成し;該有機発光 材料層上に配置した第2導体を形成し;該平面状基板に平行な方向に発光を制限 するための、第2導体上に配置した誘電材料の複数層を形成する;諸工程を含む 、上記製法。 33.第1導体を形成する工程は、第1導体を平面状にする工程を含む、請求項 32記載の製法。 34.第1導体を形成する工程は、第1導体の端部をテーパーにする工程を含む 、請求項32記載の製法。 35.平面状にする工程は、第1導体を形成し;第1導体上に誘電材料の層を付 着し;次いで、誘電材料の表面を化学的機械的に研磨して導体と誘電材料の両方 を含む平面状にされた平面状表面を形成する、請求項33記載の製法。 36.誘電材料の複数層を形成する工程の間に、誘電材料をイオン衝撃する工程 を更に含む、請求項32記載の製法。 37.第2導体上に配置されたゲッター材料の層を形成する工程を更に含む、請 求項32記載の製法。 38.誘電材料の複数層を形成する工程は、基板面に対してある角度で誘電材料 を蒸着又は付着する工程を含む、請求項32記載の製法。 39.第2導体上にバリヤー層を形成する工程を更に含む、請求項32記載の製 法。 40.バリヤー層はダイヤモンド様炭素材を含む、請求項32記載の製法。
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US5045997P | 1997-06-23 | 1997-06-23 | |
US60/050,459 | 1997-06-23 | ||
US09/074,424 | 1998-05-08 | ||
US09/074,424 US5920080A (en) | 1997-06-23 | 1998-05-08 | Emissive display using organic light emitting diodes |
PCT/US1998/012694 WO1998059528A1 (en) | 1997-06-23 | 1998-06-18 | Emissive display using organic light emitting diodes |
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JP2002508108A true JP2002508108A (ja) | 2002-03-12 |
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JP50479799A Ceased JP2002508108A (ja) | 1997-06-23 | 1998-06-18 | 有機発光ダイオードを用いた発光ディスプレイ |
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US (1) | US5920080A (ja) |
EP (1) | EP1016327A1 (ja) |
JP (1) | JP2002508108A (ja) |
KR (1) | KR20010020501A (ja) |
CN (1) | CN100336240C (ja) |
CA (1) | CA2294279A1 (ja) |
IL (2) | IL133678A0 (ja) |
WO (1) | WO1998059528A1 (ja) |
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- 1998-06-18 CN CNB988075989A patent/CN100336240C/zh not_active Expired - Fee Related
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- 1998-06-18 KR KR1019997012208A patent/KR20010020501A/ko not_active Application Discontinuation
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JP2003288983A (ja) * | 2002-01-24 | 2003-10-10 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法、及び製造装置 |
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WO2007037358A1 (ja) * | 2005-09-29 | 2007-04-05 | Matsushita Electric Industrial Co., Ltd. | 有機elディスプレイおよびその製造方法 |
KR101539015B1 (ko) * | 2007-09-17 | 2015-07-23 | 글로벌 오엘이디 테크놀러지 엘엘씨 | 개선된 광 출력을 가진 led 디바이스 |
JP2013501967A (ja) * | 2009-08-13 | 2013-01-17 | スリーエム イノベイティブ プロパティズ カンパニー | ディスプレイ及び照明装置並びに太陽電池のための光学的及び電気的性能が改善された導電フィルム又は電極 |
Also Published As
Publication number | Publication date |
---|---|
WO1998059528A1 (en) | 1998-12-30 |
IL133678A0 (en) | 2001-04-30 |
CN1265261A (zh) | 2000-08-30 |
KR20010020501A (ko) | 2001-03-15 |
CN100336240C (zh) | 2007-09-05 |
US5920080A (en) | 1999-07-06 |
IL133678A (en) | 2006-12-10 |
EP1016327A1 (en) | 2000-07-05 |
CA2294279A1 (en) | 1998-12-30 |
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