JP2002368005A5 - - Google Patents
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- Publication number
- JP2002368005A5 JP2002368005A5 JP2002108650A JP2002108650A JP2002368005A5 JP 2002368005 A5 JP2002368005 A5 JP 2002368005A5 JP 2002108650 A JP2002108650 A JP 2002108650A JP 2002108650 A JP2002108650 A JP 2002108650A JP 2002368005 A5 JP2002368005 A5 JP 2002368005A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- collector
- emitter
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002704 AlGaN Inorganic materials 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 6
- 230000001788 irregular Effects 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/833372 | 2001-04-12 | ||
| US09/833,372 US20020149033A1 (en) | 2001-04-12 | 2001-04-12 | GaN HBT superlattice base structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002368005A JP2002368005A (ja) | 2002-12-20 |
| JP2002368005A5 true JP2002368005A5 (enExample) | 2005-09-29 |
Family
ID=25264248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002108650A Pending JP2002368005A (ja) | 2001-04-12 | 2002-04-11 | ＧａＮ・ＨＢＴ超格子ベース構造 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20020149033A1 (enExample) |
| EP (1) | EP1249872A3 (enExample) |
| JP (1) | JP2002368005A (enExample) |
| TW (1) | TW554527B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3645233B2 (ja) * | 2001-06-07 | 2005-05-11 | 日本電信電話株式会社 | 半導体素子 |
| AU2002322581A1 (en) * | 2001-07-20 | 2003-03-03 | Microlink Devices, Inc. | Graded base gaassb for high speed gaas hbt |
| JP3853341B2 (ja) * | 2003-11-28 | 2006-12-06 | シャープ株式会社 | バイポーラトランジスタ |
| KR100640661B1 (ko) * | 2005-08-05 | 2006-11-01 | 삼성전자주식회사 | ｐ형 광대역 밴드 갭 화합물 반도체층에의 저저항 접촉콘택을 가지는 반도체 소자 및 제조 방법 |
| US7439558B2 (en) | 2005-11-04 | 2008-10-21 | Atmel Corporation | Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement |
| US7651919B2 (en) * | 2005-11-04 | 2010-01-26 | Atmel Corporation | Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization |
| US20070102729A1 (en) * | 2005-11-04 | 2007-05-10 | Enicks Darwin G | Method and system for providing a heterojunction bipolar transistor having SiGe extensions |
| US7300849B2 (en) * | 2005-11-04 | 2007-11-27 | Atmel Corporation | Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement |
| TWI293811B (en) * | 2005-11-22 | 2008-02-21 | Univ Nat Central | Gan heterojunction bipolar transistor with a p-type strained ingan layer and method of fabrication therefore |
| JP2007258258A (ja) * | 2006-03-20 | 2007-10-04 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体素子ならびにその構造および作製方法 |
| KR100891799B1 (ko) * | 2007-02-06 | 2009-04-07 | 삼성전기주식회사 | 교류전원용 발광소자 |
| GB2487531A (en) * | 2011-01-20 | 2012-08-01 | Sharp Kk | Substrate system consisting of a metamorphic transition region comprising a laminate of AlxGa1-x N and the same material as the substrate. |
| JP6170300B2 (ja) * | 2013-01-08 | 2017-07-26 | 住友化学株式会社 | 窒化物半導体デバイス |
| JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ | 半導体構造と超格子とを用いた高度電子デバイス |
| US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
| JP6817072B2 (ja) | 2014-05-27 | 2021-01-20 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ | 光電子デバイス |
| CN106415854B (zh) | 2014-05-27 | 2019-10-01 | 斯兰纳Uv科技有限公司 | 包括n型和p型超晶格的电子装置 |
| JP6444718B2 (ja) * | 2014-12-15 | 2018-12-26 | 株式会社東芝 | 半導体装置 |
| US10121932B1 (en) * | 2016-11-30 | 2018-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Tunable graphene light-emitting device |
| US11862717B2 (en) * | 2021-08-24 | 2024-01-02 | Globalfoundries U.S. Inc. | Lateral bipolar transistor structure with superlattice layer and method to form same |
| CN113809156B (zh) * | 2021-09-07 | 2024-07-23 | 西安瑞芯光通信息科技有限公司 | 一种化合物半导体材料的hbt外延结构及其制备方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679965A (en) * | 1995-03-29 | 1997-10-21 | North Carolina State University | Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same |
-
2001
- 2001-04-12 US US09/833,372 patent/US20020149033A1/en not_active Abandoned
-
2002
- 2002-04-03 TW TW091106733A patent/TW554527B/zh not_active IP Right Cessation
- 2002-04-11 EP EP02008132A patent/EP1249872A3/en not_active Withdrawn
- 2002-04-11 JP JP2002108650A patent/JP2002368005A/ja active Pending
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