JP2002368005A - ＧａＮ・ＨＢＴ超格子ベース構造 - Google Patents

ＧａＮ・ＨＢＴ超格子ベース構造

Info

Publication number
JP2002368005A
JP2002368005A JP2002108650A JP2002108650A JP2002368005A JP 2002368005 A JP2002368005 A JP 2002368005A JP 2002108650 A JP2002108650 A JP 2002108650A JP 2002108650 A JP2002108650 A JP 2002108650A JP 2002368005 A JP2002368005 A JP 2002368005A
Authority
JP
Japan
Prior art keywords
layer
base
emitter
collector
algan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002108650A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002368005A5 (enExample
Inventor
Michael Wojtowicz
マイケル・ウォジトウィクツ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of JP2002368005A publication Critical patent/JP2002368005A/ja
Publication of JP2002368005A5 publication Critical patent/JP2002368005A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2002108650A 2001-04-12 2002-04-11 ＧａＮ・ＨＢＴ超格子ベース構造 Pending JP2002368005A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/833372 2001-04-12
US09/833,372 US20020149033A1 (en) 2001-04-12 2001-04-12 GaN HBT superlattice base structure

Publications (2)

Publication Number Publication Date
JP2002368005A true JP2002368005A (ja) 2002-12-20
JP2002368005A5 JP2002368005A5 (enExample) 2005-09-29

Family

ID=25264248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002108650A Pending JP2002368005A (ja) 2001-04-12 2002-04-11 ＧａＮ・ＨＢＴ超格子ベース構造

Country Status (4)

Country Link
US (1) US20020149033A1 (enExample)
EP (1) EP1249872A3 (enExample)
JP (1) JP2002368005A (enExample)
TW (1) TW554527B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126171B2 (en) 2003-11-28 2006-10-24 Sharp Kabushiki Kaisha Bipolar transistor
JP2007258258A (ja) * 2006-03-20 2007-10-04 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子ならびにその構造および作製方法
JP2014135316A (ja) * 2013-01-08 2014-07-24 Hitachi Metals Ltd 窒化物半導体デバイス

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3645233B2 (ja) * 2001-06-07 2005-05-11 日本電信電話株式会社 半導体素子
WO2003009339A2 (en) * 2001-07-20 2003-01-30 Microlink Devices, Inc. Graded base gaassb for high speed gaas hbt
KR100640661B1 (ko) * 2005-08-05 2006-11-01 삼성전자주식회사 ｐ형 광대역 밴드 갭 화합물 반도체층에의 저저항 접촉콘택을 가지는 반도체 소자 및 제조 방법
US7651919B2 (en) * 2005-11-04 2010-01-26 Atmel Corporation Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
US20070102729A1 (en) * 2005-11-04 2007-05-10 Enicks Darwin G Method and system for providing a heterojunction bipolar transistor having SiGe extensions
US7439558B2 (en) 2005-11-04 2008-10-21 Atmel Corporation Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement
US7300849B2 (en) * 2005-11-04 2007-11-27 Atmel Corporation Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement
TWI293811B (en) * 2005-11-22 2008-02-21 Univ Nat Central Gan heterojunction bipolar transistor with a p-type strained ingan layer and method of fabrication therefore
KR100891799B1 (ko) * 2007-02-06 2009-04-07 삼성전기주식회사 교류전원용 발광소자
GB2487531A (en) * 2011-01-20 2012-08-01 Sharp Kk Substrate system consisting of a metamorphic transition region comprising a laminate of AlxGa1-x N and the same material as the substrate.
WO2015181656A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Electronic devices comprising n-type and p-type superlattices
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
WO2015181657A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Advanced electronic device structures using semiconductor structures and superlattices
JP6817072B2 (ja) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 光電子デバイス
JP6444718B2 (ja) * 2014-12-15 2018-12-26 株式会社東芝 半導体装置
US10121932B1 (en) * 2016-11-30 2018-11-06 The United States Of America As Represented By The Secretary Of The Navy Tunable graphene light-emitting device
US11862717B2 (en) * 2021-08-24 2024-01-02 Globalfoundries U.S. Inc. Lateral bipolar transistor structure with superlattice layer and method to form same
CN113809156B (zh) * 2021-09-07 2024-07-23 西安瑞芯光通信息科技有限公司 一种化合物半导体材料的hbt外延结构及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126171B2 (en) 2003-11-28 2006-10-24 Sharp Kabushiki Kaisha Bipolar transistor
CN100365825C (zh) * 2003-11-28 2008-01-30 夏普株式会社 双极晶体管以及包含该双极晶体管的电子装置
JP2007258258A (ja) * 2006-03-20 2007-10-04 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体素子ならびにその構造および作製方法
JP2014135316A (ja) * 2013-01-08 2014-07-24 Hitachi Metals Ltd 窒化物半導体デバイス

Also Published As

Publication number Publication date
US20020149033A1 (en) 2002-10-17
EP1249872A3 (en) 2003-12-17
TW554527B (en) 2003-09-21
EP1249872A2 (en) 2002-10-16

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