JP2002324808A5 - - Google Patents
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- Publication number
- JP2002324808A5 JP2002324808A5 JP2002009440A JP2002009440A JP2002324808A5 JP 2002324808 A5 JP2002324808 A5 JP 2002324808A5 JP 2002009440 A JP2002009440 A JP 2002009440A JP 2002009440 A JP2002009440 A JP 2002009440A JP 2002324808 A5 JP2002324808 A5 JP 2002324808A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film
- forming
- crystalline semiconductor
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 claims 264
- 239000012535 impurity Substances 0.000 claims 72
- 238000004519 manufacturing process Methods 0.000 claims 40
- 238000000034 method Methods 0.000 claims 37
- 230000004888 barrier function Effects 0.000 claims 30
- 238000010438 heat treatment Methods 0.000 claims 30
- 229910052710 silicon Inorganic materials 0.000 claims 24
- 239000010703 silicon Substances 0.000 claims 24
- 239000007789 gas Substances 0.000 claims 16
- 238000002425 crystallisation Methods 0.000 claims 12
- 230000008025 crystallization Effects 0.000 claims 12
- 230000001678 irradiating effect Effects 0.000 claims 8
- 238000005530 etching Methods 0.000 claims 6
- 230000001737 promoting effect Effects 0.000 claims 6
- 229910052724 xenon Inorganic materials 0.000 claims 6
- 238000000059 patterning Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 4
- 229910052736 halogen Inorganic materials 0.000 claims 4
- 150000002367 halogens Chemical class 0.000 claims 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 4
- 229910052753 mercury Inorganic materials 0.000 claims 4
- 229910001507 metal halide Inorganic materials 0.000 claims 4
- 150000005309 metal halides Chemical class 0.000 claims 4
- 229910052708 sodium Inorganic materials 0.000 claims 4
- 239000011734 sodium Substances 0.000 claims 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 4
- 230000001590 oxidative effect Effects 0.000 claims 3
- 230000005855 radiation Effects 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 238000005485 electric heating Methods 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 238000009832 plasma treatment Methods 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002009440A JP2002324808A (ja) | 2001-01-19 | 2002-01-18 | 半導体装置およびその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-11085 | 2001-01-19 | ||
| JP2001011085 | 2001-01-19 | ||
| JP2001022062 | 2001-01-30 | ||
| JP2001-22062 | 2001-01-30 | ||
| JP2002009440A JP2002324808A (ja) | 2001-01-19 | 2002-01-18 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008017705A Division JP4394149B2 (ja) | 2001-01-19 | 2008-01-29 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002324808A JP2002324808A (ja) | 2002-11-08 |
| JP2002324808A5 true JP2002324808A5 (enrdf_load_stackoverflow) | 2005-04-14 |
Family
ID=27345755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002009440A Withdrawn JP2002324808A (ja) | 2001-01-19 | 2002-01-18 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002324808A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7115903B2 (en) | 2001-12-28 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device producing system |
| US7166863B2 (en) | 2002-03-15 | 2007-01-23 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor element, semiconductor device, electronic device, TV set and digital camera |
| US7176490B2 (en) | 2001-12-28 | 2007-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7226817B2 (en) | 2001-12-28 | 2007-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing |
| US7582162B2 (en) | 2002-01-17 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003204067A (ja) | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
| TW200302511A (en) | 2002-01-28 | 2003-08-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| CN100350617C (zh) | 2002-03-05 | 2007-11-21 | 株式会社半导体能源研究所 | 半导体元件和使用半导体元件的半导体装置 |
| US6841434B2 (en) | 2002-03-26 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
| US6930326B2 (en) | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
| JP4271413B2 (ja) | 2002-06-28 | 2009-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4651933B2 (ja) * | 2002-11-26 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7335255B2 (en) | 2002-11-26 | 2008-02-26 | Semiconductor Energy Laboratory, Co., Ltd. | Manufacturing method of semiconductor device |
| JP4574261B2 (ja) * | 2004-07-16 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101061850B1 (ko) * | 2004-09-08 | 2011-09-02 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조방법 |
| JP4801407B2 (ja) * | 2004-09-30 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4801406B2 (ja) * | 2004-09-30 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4698998B2 (ja) * | 2004-09-30 | 2011-06-08 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4754798B2 (ja) * | 2004-09-30 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4754918B2 (ja) * | 2004-09-30 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4781066B2 (ja) * | 2004-09-30 | 2011-09-28 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP5036173B2 (ja) * | 2004-11-26 | 2012-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8003449B2 (en) | 2004-11-26 | 2011-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a reverse staggered thin film transistor |
| US8115206B2 (en) * | 2005-07-22 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2002
- 2002-01-18 JP JP2002009440A patent/JP2002324808A/ja not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7115903B2 (en) | 2001-12-28 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device producing system |
| US7176490B2 (en) | 2001-12-28 | 2007-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7226817B2 (en) | 2001-12-28 | 2007-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing |
| US7582162B2 (en) | 2002-01-17 | 2009-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
| US7166863B2 (en) | 2002-03-15 | 2007-01-23 | Semiconductor Energy Laboratory Co. Ltd. | Semiconductor element, semiconductor device, electronic device, TV set and digital camera |