JP2004047514A5 - - Google Patents

Info

Publication number

JP2004047514A5

JP2004047514A5 JP2002199175A JP2002199175A JP2004047514A5 JP 2004047514 A5 JP2004047514 A5 JP 2004047514A5 JP 2002199175 A JP2002199175 A JP 2002199175A JP 2002199175 A JP2002199175 A JP 2002199175A JP 2004047514 A5 JP2004047514 A5 JP 2004047514A5

Authority

JP

Japan

Prior art keywords

silicon film

oxide film

semiconductor device

manufacturing

film

Prior art date

2002-07-08

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
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• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 42
• 229910052710 silicon Inorganic materials 0.000 claims 42
• 239000010703 silicon Substances 0.000 claims 42
• 239000004065 semiconductor Substances 0.000 claims 40
• 238000004519 manufacturing process Methods 0.000 claims 29
• 238000000034 method Methods 0.000 claims 23
• 239000002184 metal Substances 0.000 claims 12
• 229910052751 metal Inorganic materials 0.000 claims 12
• 229910021419 crystalline silicon Inorganic materials 0.000 claims 11
• 238000009832 plasma treatment Methods 0.000 claims 8
• 238000010438 heat treatment Methods 0.000 claims 6
• 230000000737 periodic effect Effects 0.000 claims 6
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
• 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
• 239000000758 substrate Substances 0.000 claims 4
• 239000007789 gas Substances 0.000 claims 3
• 238000005268 plasma chemical vapour deposition Methods 0.000 claims 3
• IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
• 229910052786 argon Inorganic materials 0.000 claims 2
• 229910052802 copper Inorganic materials 0.000 claims 2
• 238000005530 etching Methods 0.000 claims 2
• 229910052741 iridium Inorganic materials 0.000 claims 2
• 229910052742 iron Inorganic materials 0.000 claims 2
• 229910052743 krypton Inorganic materials 0.000 claims 2
• DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
• 229910052745 lead Inorganic materials 0.000 claims 2
• 229910052754 neon Inorganic materials 0.000 claims 2
• GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
• 229910052759 nickel Inorganic materials 0.000 claims 2
• 229910052762 osmium Inorganic materials 0.000 claims 2
• 229910052763 palladium Inorganic materials 0.000 claims 2
• 229910052697 platinum Inorganic materials 0.000 claims 2
• 229910052703 rhodium Inorganic materials 0.000 claims 2
• 229910052707 ruthenium Inorganic materials 0.000 claims 2
• 229910052718 tin Inorganic materials 0.000 claims 2
• 229910052724 xenon Inorganic materials 0.000 claims 2
• FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
• 239000011521 glass Substances 0.000 claims 1
• 229910052737 gold Inorganic materials 0.000 claims 1
• 230000001678 irradiating effect Effects 0.000 claims 1
• 229910052757 nitrogen Inorganic materials 0.000 claims 1
• 238000009751 slip forming Methods 0.000 claims 1
• 238000004544 sputter deposition Methods 0.000 claims 1
• 230000003746 surface roughness Effects 0.000 claims 1