JP2002203789A5 - - Google Patents

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Publication number
JP2002203789A5
JP2002203789A5 JP2000403098A JP2000403098A JP2002203789A5 JP 2002203789 A5 JP2002203789 A5 JP 2002203789A5 JP 2000403098 A JP2000403098 A JP 2000403098A JP 2000403098 A JP2000403098 A JP 2000403098A JP 2002203789 A5 JP2002203789 A5 JP 2002203789A5
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JP
Japan
Prior art keywords
semiconductor film
crystalline semiconductor
manufacturing
light
rare gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000403098A
Other languages
English (en)
Japanese (ja)
Other versions
JP4421104B2 (ja
JP2002203789A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000403098A priority Critical patent/JP4421104B2/ja
Priority claimed from JP2000403098A external-priority patent/JP4421104B2/ja
Priority to US10/020,961 priority patent/US7045444B2/en
Publication of JP2002203789A publication Critical patent/JP2002203789A/ja
Publication of JP2002203789A5 publication Critical patent/JP2002203789A5/ja
Priority to US11/404,923 priority patent/US7821005B2/en
Application granted granted Critical
Publication of JP4421104B2 publication Critical patent/JP4421104B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000403098A 2000-12-19 2000-12-28 半導体装置の作製方法 Expired - Fee Related JP4421104B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000403098A JP4421104B2 (ja) 2000-12-28 2000-12-28 半導体装置の作製方法
US10/020,961 US7045444B2 (en) 2000-12-19 2001-12-19 Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US11/404,923 US7821005B2 (en) 2000-12-19 2006-04-17 Method of manufacturing semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000403098A JP4421104B2 (ja) 2000-12-28 2000-12-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002203789A JP2002203789A (ja) 2002-07-19
JP2002203789A5 true JP2002203789A5 (enrdf_load_stackoverflow) 2005-08-11
JP4421104B2 JP4421104B2 (ja) 2010-02-24

Family

ID=18867274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000403098A Expired - Fee Related JP4421104B2 (ja) 2000-12-19 2000-12-28 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4421104B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6861338B2 (en) 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US7348222B2 (en) 2003-06-30 2008-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device
US7358165B2 (en) 2003-07-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing semiconductor device
US7247527B2 (en) 2003-07-31 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and laser irradiation apparatus

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