JP2002203789A5 - - Google Patents
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- Publication number
- JP2002203789A5 JP2002203789A5 JP2000403098A JP2000403098A JP2002203789A5 JP 2002203789 A5 JP2002203789 A5 JP 2002203789A5 JP 2000403098 A JP2000403098 A JP 2000403098A JP 2000403098 A JP2000403098 A JP 2000403098A JP 2002203789 A5 JP2002203789 A5 JP 2002203789A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- crystalline semiconductor
- manufacturing
- light
- rare gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 86
- 239000012535 impurity Substances 0.000 claims 27
- 229910052751 metal Inorganic materials 0.000 claims 21
- 239000002184 metal Substances 0.000 claims 21
- 238000004519 manufacturing process Methods 0.000 claims 20
- 238000000034 method Methods 0.000 claims 20
- 230000001678 irradiating effect Effects 0.000 claims 16
- 230000000737 periodic effect Effects 0.000 claims 12
- 238000010438 heat treatment Methods 0.000 claims 11
- 229910052795 boron group element Inorganic materials 0.000 claims 6
- 229910052696 pnictogen Inorganic materials 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 3
- 229960001716 benzalkonium Drugs 0.000 claims 3
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical class 0.000 claims 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 3
- 229910052753 mercury Inorganic materials 0.000 claims 3
- 229910001507 metal halide Inorganic materials 0.000 claims 3
- 150000005309 metal halides Chemical class 0.000 claims 3
- 229910052708 sodium Inorganic materials 0.000 claims 3
- 239000011734 sodium Substances 0.000 claims 3
- 229910052724 xenon Inorganic materials 0.000 claims 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000403098A JP4421104B2 (ja) | 2000-12-28 | 2000-12-28 | 半導体装置の作製方法 |
US10/020,961 US7045444B2 (en) | 2000-12-19 | 2001-12-19 | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
US11/404,923 US7821005B2 (en) | 2000-12-19 | 2006-04-17 | Method of manufacturing semiconductor device and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000403098A JP4421104B2 (ja) | 2000-12-28 | 2000-12-28 | 半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002203789A JP2002203789A (ja) | 2002-07-19 |
JP2002203789A5 true JP2002203789A5 (enrdf_load_stackoverflow) | 2005-08-11 |
JP4421104B2 JP4421104B2 (ja) | 2010-02-24 |
Family
ID=18867274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000403098A Expired - Fee Related JP4421104B2 (ja) | 2000-12-19 | 2000-12-28 | 半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4421104B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6861338B2 (en) | 2002-08-22 | 2005-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method of manufacturing the same |
US7348222B2 (en) | 2003-06-30 | 2008-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device |
US7358165B2 (en) | 2003-07-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing semiconductor device |
US7247527B2 (en) | 2003-07-31 | 2007-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device, and laser irradiation apparatus |
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2000
- 2000-12-28 JP JP2000403098A patent/JP4421104B2/ja not_active Expired - Fee Related