JP2002289462A - 薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路 - Google Patents

薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路

Info

Publication number
JP2002289462A
JP2002289462A JP2001089528A JP2001089528A JP2002289462A JP 2002289462 A JP2002289462 A JP 2002289462A JP 2001089528 A JP2001089528 A JP 2001089528A JP 2001089528 A JP2001089528 A JP 2001089528A JP 2002289462 A JP2002289462 A JP 2002289462A
Authority
JP
Japan
Prior art keywords
thin film
dielectric thin
crystal grain
main crystal
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001089528A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002289462A5 (enExample
Inventor
Hitoshi Kitagawa
均 北川
Makoto Sasaki
真 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP2001089528A priority Critical patent/JP2002289462A/ja
Priority to US10/100,935 priority patent/US6605515B2/en
Priority to EP02252172A priority patent/EP1246232A3/en
Priority to CNB021085153A priority patent/CN1225754C/zh
Publication of JP2002289462A publication Critical patent/JP2002289462A/ja
Priority to US10/452,246 priority patent/US6747334B2/en
Publication of JP2002289462A5 publication Critical patent/JP2002289462A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2001089528A 2001-03-27 2001-03-27 薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路 Withdrawn JP2002289462A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001089528A JP2002289462A (ja) 2001-03-27 2001-03-27 薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路
US10/100,935 US6605515B2 (en) 2001-03-27 2002-03-18 Method for manufacturing thin-film capacitor for performing temperature compensation of junction capacitance of semiconductor device
EP02252172A EP1246232A3 (en) 2001-03-27 2002-03-26 Method for manufacturing thin film capacitor for performing temperature compensation of junction capacitance of semiconductor device
CNB021085153A CN1225754C (zh) 2001-03-27 2002-03-27 薄膜电容器的制造方法
US10/452,246 US6747334B2 (en) 2001-03-27 2003-05-30 Thin-film capacitor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001089528A JP2002289462A (ja) 2001-03-27 2001-03-27 薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路

Publications (2)

Publication Number Publication Date
JP2002289462A true JP2002289462A (ja) 2002-10-04
JP2002289462A5 JP2002289462A5 (enExample) 2004-09-09

Family

ID=18944446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001089528A Withdrawn JP2002289462A (ja) 2001-03-27 2001-03-27 薄膜キャパシタの製造方法とその薄膜キャパシタを備えた温度補償用薄膜コンデンサ及び電子機器と電子回路

Country Status (4)

Country Link
US (2) US6605515B2 (enExample)
EP (1) EP1246232A3 (enExample)
JP (1) JP2002289462A (enExample)
CN (1) CN1225754C (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005252069A (ja) * 2004-03-05 2005-09-15 Tdk Corp 電子デバイス及びその製造方法
JP2008277734A (ja) * 2007-04-25 2008-11-13 Ind Technol Res Inst コンデンサ装置

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6606515B1 (en) * 1996-09-13 2003-08-12 Scimed Life Systems, Inc. Guide wire insertion and re-insertion tools and methods of use
US7518284B2 (en) 2000-11-02 2009-04-14 Danfoss A/S Dielectric composite and a method of manufacturing a dielectric composite
US7548015B2 (en) * 2000-11-02 2009-06-16 Danfoss A/S Multilayer composite and a method of making such
US8181338B2 (en) 2000-11-02 2012-05-22 Danfoss A/S Method of making a multilayer composite
ATE384935T1 (de) * 2001-12-21 2008-02-15 Danfoss As Dielektrisches betätigungsglied oder sensorstruktur und herstellungsverfahren
JP4166013B2 (ja) * 2001-12-26 2008-10-15 富士通株式会社 薄膜キャパシタ製造方法
CN100530931C (zh) * 2002-09-20 2009-08-19 丹福斯有限公司 弹性体致动器及制造致动器的方法
US20040061990A1 (en) * 2002-09-26 2004-04-01 Dougherty T. Kirk Temperature-compensated ferroelectric capacitor device, and its fabrication
ATE440319T1 (de) * 2002-12-12 2009-09-15 Danfoss As Berührungssensorelement und sensorgruppe
WO2004093763A1 (en) 2003-02-24 2004-11-04 Danfoss A/S Electro active elastic compression bandage
US20040190225A1 (en) * 2003-03-28 2004-09-30 Nippon Paint Co., Ltd. Silicon-containing compound, sintered body of silicon-containing compound, and producing method thereof, and completely solid type capacitor element using same
JP4523299B2 (ja) * 2003-10-31 2010-08-11 学校法人早稲田大学 薄膜コンデンサの製造方法
JP4370217B2 (ja) * 2004-07-29 2009-11-25 Ｔｄｋ株式会社 積層セラミックコンデンサ
US9572258B2 (en) 2004-12-30 2017-02-14 Intel Corporation Method of forming a substrate core with embedded capacitor and structures formed thereby
US7372126B2 (en) * 2005-03-31 2008-05-13 Intel Corporation Organic substrates with embedded thin-film capacitors, methods of making same, and systems containing same
US7288459B2 (en) * 2005-03-31 2007-10-30 Intel Corporation Organic substrates with integral thin-film capacitors, methods of making same, and systems containing same
US7732999B2 (en) * 2006-11-03 2010-06-08 Danfoss A/S Direct acting capacitive transducer
US7880371B2 (en) 2006-11-03 2011-02-01 Danfoss A/S Dielectric composite and a method of manufacturing a dielectric composite
US7902564B2 (en) * 2006-12-22 2011-03-08 Koninklijke Philips Electronics N.V. Multi-grain luminescent ceramics for light emitting devices
JP5294201B2 (ja) * 2006-12-25 2013-09-18 独立行政法人物質・材料研究機構 誘電体素子とその製造方法
US8047073B2 (en) * 2007-05-14 2011-11-01 Samsung Sdi Co., Ltd. Capacitive liquid level detector for direct methanol fuel cell systems
US8101495B2 (en) 2008-03-13 2012-01-24 Infineon Technologies Ag MIM capacitors in semiconductor components
JP5332989B2 (ja) * 2009-07-10 2013-11-06 ソニー株式会社 液体タンクおよび燃料電池
US8692442B2 (en) 2012-02-14 2014-04-08 Danfoss Polypower A/S Polymer transducer and a connector for a transducer
US8891222B2 (en) 2012-02-14 2014-11-18 Danfoss A/S Capacitive transducer and a method for manufacturing a transducer
US10748986B2 (en) 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors
EP3796383A4 (en) * 2019-07-26 2021-03-31 Shenzhen Goodix Technology Co., Ltd. CAPACITY DEVICE AND ASSOCIATED MANUFACTURING PROCESS
US11869725B2 (en) * 2021-11-30 2024-01-09 Texas Instruments Incorporated Multi-stacked capacitor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124303A (ja) 1983-12-08 1985-07-03 沖電気工業株式会社 マイクロ波用誘電体セラミックス
US6002578A (en) * 1986-08-22 1999-12-14 Canon Kabushiki Kaisha Ceramic substrate, circuit substrate and electronic circuit substrate by use thereof and method for preparing ceramic substrate
JPS63110618A (ja) 1986-10-28 1988-05-16 沖電気工業株式会社 積層型マイクロ波用誘電体磁器組成物
JPH0648666B2 (ja) * 1987-09-29 1994-06-22 三菱マテリアル株式会社 積層セラミックコンデンサ及びその製法
JPH03252160A (ja) * 1990-02-28 1991-11-11 Nec Corp コンデンサ、コンデンサネットワーク及び抵抗―コンデンサネットワーク
DE69624042T2 (de) 1995-06-16 2003-06-05 At&T Ipm Corp., Coral Gables TiO2 dotiertes, Ta2O5 enthaltendes dielektrisches Material und dieses enthaltende Bauteile
JPH09293629A (ja) * 1996-04-26 1997-11-11 Mitsubishi Materials Corp 薄膜コンデンサ
US5978207A (en) * 1996-10-30 1999-11-02 The Research Foundation Of The State University Of New York Thin film capacitor
US6251816B1 (en) * 1998-12-31 2001-06-26 Mra Laboratories, Inc. Capacitor and dielectric ceramic powder based upon a barium borate and zinc silicate dual-component sintering flux
WO2001031687A2 (en) * 1999-10-27 2001-05-03 The Penn State Research Foundation Pyrochlore thin films and process for making

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005252069A (ja) * 2004-03-05 2005-09-15 Tdk Corp 電子デバイス及びその製造方法
JP2008277734A (ja) * 2007-04-25 2008-11-13 Ind Technol Res Inst コンデンサ装置
US7804678B2 (en) 2007-04-25 2010-09-28 Industrial Technology Research Institute Capacitor devices
US8035951B2 (en) 2007-04-25 2011-10-11 Industrial Technology Research Institute Capacitor devices

Also Published As

Publication number Publication date
CN1378223A (zh) 2002-11-06
US20030008470A1 (en) 2003-01-09
US20030213960A1 (en) 2003-11-20
US6605515B2 (en) 2003-08-12
EP1246232A3 (en) 2006-06-07
EP1246232A2 (en) 2002-10-02
US6747334B2 (en) 2004-06-08
CN1225754C (zh) 2005-11-02

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