JP2002261013A - レーザ照射方法並びに半導体装置の作製方法 - Google Patents
レーザ照射方法並びに半導体装置の作製方法Info
- Publication number
- JP2002261013A JP2002261013A JP2001360383A JP2001360383A JP2002261013A JP 2002261013 A JP2002261013 A JP 2002261013A JP 2001360383 A JP2001360383 A JP 2001360383A JP 2001360383 A JP2001360383 A JP 2001360383A JP 2002261013 A JP2002261013 A JP 2002261013A
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- JP
- Japan
- Prior art keywords
- substrate
- laser beam
- laser
- semiconductor film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 238000000034 method Methods 0.000 title claims abstract description 135
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- 229910052710 silicon Inorganic materials 0.000 description 29
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
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- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
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- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001360383A JP2002261013A (ja) | 2000-11-29 | 2001-11-27 | レーザ照射方法並びに半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000362036 | 2000-11-29 | ||
| JP2000394977 | 2000-12-26 | ||
| JP2000-362036 | 2000-12-26 | ||
| JP2000-394977 | 2000-12-26 | ||
| JP2001360383A JP2002261013A (ja) | 2000-11-29 | 2001-11-27 | レーザ照射方法並びに半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006309211A Division JP2007123910A (ja) | 2000-11-29 | 2006-11-15 | 薄膜トランジスタの作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002261013A true JP2002261013A (ja) | 2002-09-13 |
| JP2002261013A5 JP2002261013A5 (enExample) | 2005-06-30 |
Family
ID=27345287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001360383A Withdrawn JP2002261013A (ja) | 2000-11-29 | 2001-11-27 | レーザ照射方法並びに半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002261013A (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004349635A (ja) * | 2003-05-26 | 2004-12-09 | Fuji Photo Film Co Ltd | レーザアニール方法及び装置 |
| JP2005085817A (ja) * | 2003-09-04 | 2005-03-31 | Mitsubishi Electric Corp | 薄膜半導体装置およびその製造方法 |
| JP2009016811A (ja) * | 2007-06-07 | 2009-01-22 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US7696031B2 (en) | 2004-06-14 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd | Method for manufacturing semiconductor device |
| JP2011504661A (ja) * | 2007-11-21 | 2011-02-10 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | エピタキシャルに配向された厚膜を調製するための調製システムおよび方法 |
| JP2014515719A (ja) * | 2011-03-08 | 2014-07-03 | サン−ゴバン グラス フランス | 被覆物を備えた基材を得る方法 |
-
2001
- 2001-11-27 JP JP2001360383A patent/JP2002261013A/ja not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004349635A (ja) * | 2003-05-26 | 2004-12-09 | Fuji Photo Film Co Ltd | レーザアニール方法及び装置 |
| JP2005085817A (ja) * | 2003-09-04 | 2005-03-31 | Mitsubishi Electric Corp | 薄膜半導体装置およびその製造方法 |
| US7696031B2 (en) | 2004-06-14 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd | Method for manufacturing semiconductor device |
| JP2009016811A (ja) * | 2007-06-07 | 2009-01-22 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2011504661A (ja) * | 2007-11-21 | 2011-02-10 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | エピタキシャルに配向された厚膜を調製するための調製システムおよび方法 |
| JP2014515719A (ja) * | 2011-03-08 | 2014-07-03 | サン−ゴバン グラス フランス | 被覆物を備えた基材を得る方法 |
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