JP2002261013A5 - - Google Patents

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Publication number
JP2002261013A5
JP2002261013A5 JP2001360383A JP2001360383A JP2002261013A5 JP 2002261013 A5 JP2002261013 A5 JP 2002261013A5 JP 2001360383 A JP2001360383 A JP 2001360383A JP 2001360383 A JP2001360383 A JP 2001360383A JP 2002261013 A5 JP2002261013 A5 JP 2002261013A5
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JP
Japan
Prior art keywords
laser beam
substrate
reflector
irradiating
back side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001360383A
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English (en)
Japanese (ja)
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JP2002261013A (ja
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Publication date
Application filed filed Critical
Priority to JP2001360383A priority Critical patent/JP2002261013A/ja
Priority claimed from JP2001360383A external-priority patent/JP2002261013A/ja
Publication of JP2002261013A publication Critical patent/JP2002261013A/ja
Publication of JP2002261013A5 publication Critical patent/JP2002261013A5/ja
Withdrawn legal-status Critical Current

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JP2001360383A 2000-11-29 2001-11-27 レーザ照射方法並びに半導体装置の作製方法 Withdrawn JP2002261013A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001360383A JP2002261013A (ja) 2000-11-29 2001-11-27 レーザ照射方法並びに半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000362036 2000-11-29
JP2000394977 2000-12-26
JP2000-362036 2000-12-26
JP2000-394977 2000-12-26
JP2001360383A JP2002261013A (ja) 2000-11-29 2001-11-27 レーザ照射方法並びに半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006309211A Division JP2007123910A (ja) 2000-11-29 2006-11-15 薄膜トランジスタの作製方法

Publications (2)

Publication Number Publication Date
JP2002261013A JP2002261013A (ja) 2002-09-13
JP2002261013A5 true JP2002261013A5 (enExample) 2005-06-30

Family

ID=27345287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001360383A Withdrawn JP2002261013A (ja) 2000-11-29 2001-11-27 レーザ照射方法並びに半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2002261013A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4660074B2 (ja) * 2003-05-26 2011-03-30 富士フイルム株式会社 レーザアニール装置
JP2005085817A (ja) * 2003-09-04 2005-03-31 Mitsubishi Electric Corp 薄膜半導体装置およびその製造方法
US7696031B2 (en) 2004-06-14 2010-04-13 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing semiconductor device
JP5411456B2 (ja) * 2007-06-07 2014-02-12 株式会社半導体エネルギー研究所 半導体装置
EP2212913A4 (en) * 2007-11-21 2013-10-30 Univ Columbia SYSTEMS AND METHOD FOR PRODUCING EPITACTIC STRUCTURED THICK FILMS
FR2972447B1 (fr) * 2011-03-08 2019-06-07 Saint-Gobain Glass France Procede d'obtention d'un substrat muni d'un revetement

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