JP2002289524A5 - - Google Patents

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Publication number
JP2002289524A5
JP2002289524A5 JP2001398600A JP2001398600A JP2002289524A5 JP 2002289524 A5 JP2002289524 A5 JP 2002289524A5 JP 2001398600 A JP2001398600 A JP 2001398600A JP 2001398600 A JP2001398600 A JP 2001398600A JP 2002289524 A5 JP2002289524 A5 JP 2002289524A5
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JP
Japan
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substrate
linear
laser beam
semiconductor film
incident
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JP2001398600A
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English (en)
Japanese (ja)
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JP4845309B2 (ja
JP2002289524A (ja
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Publication of JP2002289524A5 publication Critical patent/JP2002289524A5/ja
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JP2001398600A 2000-12-27 2001-12-27 レーザアニール方法及び半導体装置の作製方法 Expired - Fee Related JP4845309B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001398600A JP4845309B2 (ja) 2000-12-27 2001-12-27 レーザアニール方法及び半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000399462 2000-12-27
JP2000399462 2000-12-27
JP2000-399462 2000-12-27
JP2001398600A JP4845309B2 (ja) 2000-12-27 2001-12-27 レーザアニール方法及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002289524A JP2002289524A (ja) 2002-10-04
JP2002289524A5 true JP2002289524A5 (enExample) 2005-07-28
JP4845309B2 JP4845309B2 (ja) 2011-12-28

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JP2001398600A Expired - Fee Related JP4845309B2 (ja) 2000-12-27 2001-12-27 レーザアニール方法及び半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG108878A1 (en) 2001-10-30 2005-02-28 Semiconductor Energy Lab Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
JP4762121B2 (ja) * 2001-11-16 2011-08-31 株式会社半導体エネルギー研究所 レーザ照射方法、及び半導体装置の作製方法
JP2004128421A (ja) 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
DE602004020538D1 (de) 2003-02-28 2009-05-28 Semiconductor Energy Lab Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
JP4515034B2 (ja) * 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4799825B2 (ja) * 2003-03-03 2011-10-26 株式会社半導体エネルギー研究所 レーザ照射方法
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4860116B2 (ja) * 2003-03-17 2012-01-25 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
JP2005079312A (ja) * 2003-08-29 2005-03-24 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置
JP6615658B2 (ja) * 2016-03-16 2019-12-04 株式会社ブイ・テクノロジー マスク及び薄膜トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890723A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp レ−ザビ−ム照射による物性変化方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置
JPH11162868A (ja) * 1997-12-02 1999-06-18 Toshiba Corp レ−ザ照射装置
JP3504528B2 (ja) * 1999-03-18 2004-03-08 株式会社日本製鋼所 レーザ光照射装置

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