JP2002289524A5 - - Google Patents

Claims (21)

Means for uniformly processing the energy distribution of the laser beam definitive on the irradiated object formed over a substrate,
Means for obliquely irradiating the irradiated body with the laser beam;
Have a,
The beam width when the laser beam is incident on the irradiated body is w ₁ , the beam width when a part of the laser beam reflected by the back surface of the substrate is incident again on the irradiated body is w ₂ , When the thickness of the substrate is D, the incident angle θ of the laser beam to the irradiated object is

The laser irradiation apparatus characterized by satisfy | filling. Means for shape definitive a laser beam on the irradiated object formed over a substrate is processed into a linear beam is linear,
Means for obliquely irradiating the irradiated body with the linear beam;
Have a,
The beam width when the linear beam is incident on the irradiated body is w ₁ , and the beam width when a part of the linear beam reflected by the back surface of the substrate is incident again on the irradiated body is w _2. When the thickness of the substrate is D, the incident angle θ of the linear beam with respect to the irradiated object is

The laser irradiation apparatus characterized by satisfy | filling. Means for uniformly processing the energy distribution of the laser beam definitive on the irradiated object formed over a substrate,
Means for obliquely irradiating the irradiated body with the laser beam;
Have a,
The beam width when the laser beam is incident on the irradiated body is w ₁ , the beam width when a part of the laser beam reflected by the back surface of the substrate is incident again on the irradiated body is w ₂ , When the thickness of the substrate is D, the incident angle θ of the laser beam to the irradiated object is

The laser irradiation apparatus characterized by satisfy | filling. Means for processing a laser beam into a linear beam having a linear shape on the irradiated body formed on the substrate;
Means for obliquely irradiating the irradiated body with the linear beam;
Have a,
The beam width when the linear beam is incident on the irradiated body is w ₁ , and the beam width when a part of the linear beam reflected by the back surface of the substrate is incident again on the irradiated body is w _2. When the thickness of the substrate is D, the incident angle θ of the linear beam with respect to the irradiated object is

The laser irradiation apparatus characterized by satisfy | filling.   5. The laser irradiation apparatus according to claim 1, wherein the laser beam has a wavelength of 350 nm or more. 6. The laser irradiation apparatus according to claim 1, wherein the irradiation target is a semiconductor film . Uniformly processed energy distribution of the laser beam definitive on the irradiated object,
A laser annealing method, wherein the laser beam is irradiated obliquely to the irradiated body, and a part of the laser beam is transmitted through the irradiated body. The laser beam shape definitive on the irradiated body is processed into a linear beam is linear,
A laser annealing method, wherein the linear beam is irradiated obliquely onto the irradiated object, and a part of the linear beam is transmitted through the irradiated object. The energy distribution of the definitive laser beam on the irradiated body formed on the substrate uniformly processed,
The beam width when the laser beam is incident on the irradiated body is w ₁ , and the beam width when a part of the laser beam reflected on the back surface of the substrate is incident again on the irradiated body is w ₂ , When the thickness of the substrate is D, the laser beam is applied to the irradiated object.

Irradiation with an incident angle θ satisfying Shape definitive a laser beam on the irradiated body formed on the substrate is processed into a linear beam is linear,
The beam width when the linear beam is incident on the irradiated body is w ₁ , and the beam width when a part of the linear beam reflected by the back surface of the substrate is incident again on the irradiated body is w _2. When the thickness of the substrate is D, the linear beam is directed to the irradiated object.

Irradiation with an incident angle θ satisfying The energy distribution of the definitive laser beam on the irradiated body formed on the substrate uniformly processed,
The beam width when the laser beam is incident on the irradiated body is w ₁ , and the beam width when a part of the laser beam reflected on the back surface of the substrate is incident again on the irradiated body is w ₂ , When the thickness of the substrate is D, the laser beam is applied to the irradiated object.

Irradiation with an incident angle θ satisfying Processing the laser beam into a linear beam whose shape on the irradiated object formed on the substrate is linear,
The beam width when the linear beam is incident on the irradiated body is w ₁ , and the beam width when a part of the linear beam reflected by the back surface of the substrate is incident again on the irradiated body is w _2. When the thickness of the substrate is D, the linear beam is directed to the irradiated object.

Irradiation with an incident angle θ satisfying According to any one of claims 7 to 12, the wavelength of the laser light is laser annealing method characterized in that a least 350 nm. The energy distribution of the definitive laser beam on the semiconductor film uniformly processed,
The annealing of the semiconductor film line stomach by irradiating the laser beam obliquely to the semiconductor film,
A method for manufacturing a semiconductor device, wherein part of the laser light is transmitted through the semiconductor film. Shape definitive laser light on the semiconductor film is processed into a linear beam is linear,
Rows that have the annealing of the semiconductor film by irradiating obliquely to the semiconductor layer using the linear beam,
A method for manufacturing a semiconductor device, wherein a part of the linear beam is transmitted through the semiconductor film. The energy distribution of the definitive laser beam on the semiconductor film formed on a substrate uniformly processed,
The beam width when the laser beam is incident on the semiconductor film is w ₁ , the beam width when a part of the laser beam reflected on the back surface of the substrate is incident again on the semiconductor film is w ₂ , When the thickness is D, the laser beam is applied to the semiconductor film.

A method for manufacturing a semiconductor device, comprising annealing the semiconductor film by irradiation at an incident angle θ satisfying A laser beam is processed into a linear beam is definitive shape linear on the semiconductor film formed on a substrate,
The beam width when the linear beam is incident on the semiconductor film is w ₁ , and the beam width when a part of the linear beam reflected on the back surface of the substrate is incident again on the semiconductor film is w ₂ , When the thickness of the substrate is D, the linear beam is directed to the semiconductor film.

A method for manufacturing a semiconductor device, comprising annealing the semiconductor film by irradiation at an incident angle θ satisfying The energy distribution of the definitive laser beam on the semiconductor film formed on a substrate uniformly processed,
The beam width when the laser beam is incident on the semiconductor film is w ₁ , the beam width when a part of the laser beam reflected on the back surface of the substrate is incident again on the semiconductor film is w ₂ , When the thickness is D, the laser beam is applied to the semiconductor film.

A method for manufacturing a semiconductor device, comprising annealing the semiconductor film by irradiation at an incident angle θ satisfying Processing the laser beam into a linear beam whose shape on the semiconductor film formed on the substrate is linear,
The beam width when the linear beam is incident on the semiconductor film is w ₁ , and the beam width when a part of the linear beam reflected on the back surface of the substrate is incident again on the semiconductor film is w ₂ , When the thickness of the substrate is D, the linear beam is directed to the semiconductor film.

A method for manufacturing a semiconductor device, comprising annealing the semiconductor film by irradiation at an incident angle θ satisfying According to any one of claims 14 to 19, a method for manufacturing a semiconductor device the wavelength of the laser beam is characterized by a higher 350 nm. 21. The method for manufacturing a semiconductor device according to claim 14, wherein the semiconductor film contains silicon.