CN107030377A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
- Publication number
- CN107030377A CN107030377A CN201611101179.5A CN201611101179A CN107030377A CN 107030377 A CN107030377 A CN 107030377A CN 201611101179 A CN201611101179 A CN 201611101179A CN 107030377 A CN107030377 A CN 107030377A
- Authority
- CN
- China
- Prior art keywords
- laser beam
- modification layer
- chip
- pulse laser
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Abstract
The processing method that chip is provided.It has：Layer forming step is modified, modification layer is internally formed in wafer W；And segmentation step, wafer W is split as segmentation starting point using modifying layer, modification layer forming step is comprised at least：1st step, irradiated with pulse laser beam (LB1) and formed the 1st modify layer (10)；And second step, irradiated with pulse laser beam (LB2) and formed the 2nd modify layer (12), output to pulse laser beam is set so that the cracking (11 produced from the 1st modification layer (10) and the 2nd modification layer (12), 13) turning into will not be with the pulse laser beam (LB1 that next irradiates, LB2 the length) met, defined interval (100) is set to cracking (11, 13) discontinuous interval each other, so can suppressor pulse laser beam impinge upon the cracking (11 formed before, 13) reflection/scattering occurs on, device damage can be prevented.
Description
Technical field
The present invention relates to the processing method of chip, have in irradiation for chip the wavelength of permeability pulse laser beam and
After inner wafer forms modification layer, external force is applied to chip and multiple devices are divided the wafer into modify layer as starting point
Chip.
Background technology
Divided on the front side of the wafer by segmentation preset lines and be formed with the devices such as IC, LSI, by along segmentation preset lines
The chip is split and each device chip with device is divided into.It is used as the side for dividing the wafer into each chip
Method, for example, there are as below methods for tool：The focal point of the pulse laser beam of the wavelength for chip with permeability is positioned at dividing
The inside of the corresponding chip of preset lines is cut, modification is internally formed in chip along segmentation preset lines irradiated with pulse laser beam
Layer, and apply external force along the segmentation preset lines for being formed with modification layer and divide the wafer into each device to modify layer as starting point
Chip (for example, referring to following patent documents 1).
Patent document 1：No. 4402708 publication of Japanese Unexamined Patent Publication
But, the problem of research finds to generate new following：When by the focal point of pulse laser beam be positioned at before
Formed in the adjacent position of modification layer of the inside of chip from the rear side of chip along segmentation preset lines irradiated with pulse laser
Beam is so as to which in chip, when being internally formed modification layer, laser beam can scatter to opposite with the face (back side) for having irradiated pulse laser beam
Side front on, and attack and form device on front and damage it.
Deducing the cause of the problem is：Fine cracking (crackle) from forming in the modification layer of the inside of chip before
Stretched along the thickness direction of chip, the pulse laser beam next irradiated impinges upon in the cracking and occurs refraction or reflect and attack
Device.
The content of the invention
The present invention be in view of above-mentioned thing and complete, its object is to provide a kind of processing method of chip, shining
Penetrate the wavelength that there is permeability for chip pulse laser beam and inner wafer formation modification layer when, can prevent device because
Transmitted light and damage.
The processing method of the chip of the present invention is by laser processing device to being divided on front by a plurality of segmentation preset lines
And the chip for being formed with multiple devices is processed, the laser processing device has：Holding unit, it is protected to machined object
Hold；Laser beam irradiation unit, it irradiates the pulse of the wavelength for the machined object that the holding unit is kept with permeability
Laser beam and be internally formed modification layer in machined object；And processing feed unit, it is to the holding unit and the laser beam
Illumination unit is relatively processed feeding, and the processing method of the chip is characterised by, with the steps：Modify layer shape
Into step, the focal point of the pulse laser beam of the wavelength for chip with permeability is positioned at the inside of chip and from chip
The back side pair area illumination pulse laser beam corresponding with the segmentation preset lines, and the holding unit and the laser beam are irradiated
Unit is relatively processed feeding, so as to be internally formed modification layer in chip；And segmentation step, implementing the modification
After layer forming step, apply external force to chip and with modification layer for segmentation starting point by chip along segmentation preset lines point
Cut, modification layer forming step comprises at least the steps：1st step, crystalline substance is positioned at by the focal point of the pulse laser beam
The position of 1st depth of the face side of piece and irradiate the pulse laser beam so as to formed the 1st modification layer；And second step, by this
The focal point of pulse laser beam be positioned at away from the 1st modification layer separate as defined in interval rear side the 2nd depth position and
The pulse laser beam is irradiated so as to form the 2nd modification layer, and in modification layer forming step, the output to pulse laser beam is carried out
It is set so that the cracking produced from the 1st modification layer and the 2nd modification layer as will not be with the pulse laser that next irradiates
The length that beam meets, and the defined interval be set to make the cracking that produces from the 1st modification layer and the 2nd modification layer that
This discontinuous interval.
The processing method of the chip of the present invention has following steps：Layer forming step is modified, is changed in being internally formed for chip
Matter layer；And segmentation step, external force is applied to chip and split chip along segmentation preset lines as segmentation starting point using modifying layer,
Modification layer forming step is comprised at least：1st step, the focal point of the pulse laser beam is positioned at the 1st of the face side of chip
The position of depth and irradiate the pulse laser beam so as to formed the 1st modification layer；And second step, by the poly- of the pulse laser beam
Optical codes irradiate the pulse laser in the position of the 2nd depth of the rear side that defined interval is separated away from the 1st modification layer
Beam is so as to form the 2nd modification layer, and in modification layer forming step, the output to pulse laser beam is set so that from this
The cracking that 1st modification layer and the 2nd modification layer are produced turns into the length that will not be met with the pulse laser beam next irradiated, and
And the defined interval is set to make the cracking that produces from the 1st modification layer and the 2nd modification layer discontinuous interval each other,
So the cracking produced from the 1st modification layer and the 2nd modification layer longer on the thickness direction of chip will not be stretched.Also, from
The cracking that 1st modification layer and the 2nd modification layer are produced also will not longlyer be connected because continuous each other, so can suppress following
The pulse laser beam of irradiation impinges upon in the cracking formed before and occurs reflection/scattering, can prevent device damage.
Brief description of the drawings
Fig. 1 is the stereogram for the structure for showing laser processing device.
Fig. 2 is the stereogram of one for showing chip.
Fig. 3 is the enlarged partial sectional view for showing to modify layer forming step (the 1st step).
Fig. 4 is the enlarged partial sectional view for showing to modify layer forming step (second step).
Fig. 5 is the chart of the experimental result of the segmentation rate for the generation quantity and device for showing damage.
Label declaration
1：Laser processing device；2：Base station；2a：Upper surface；3：Post；4：Holding unit；5：Rotary unit；6：Laser beam shines
Penetrate unit；7：Oscillator；8：Concentrator；9a, 9b：Focal point；10：1st modification layer；100：Defined interval；101：Distance；
11：Cracking；12：2nd modification layer；13：Cracking；20：Process feed unit；21：Ball-screw；22：Motor；23：Guide rail；
24：Mobile foundation；30：Indexable feed unit；31：Ball-screw；32：Motor；33：Guide rail；34：Mobile foundation.
Embodiment
Laser processing device 1 shown in Fig. 1 has base station 2, is provided with the Y direction front vertical of base station 2 in Z axis side
The post 3 upwardly extended.There is the holding unit 4 kept to machined object in the upper surface 2a of base station 2.Holding unit 4 with
The rotary unit 5 for making holding unit 4 be rotated with defined angle is connected.
There is laser beam irradiation unit 6 in the front of post 3, the laser beam irradiation unit 6 is irradiated keeps single for being maintained at
Machined object in member 4 has the pulse laser beam of the wavelength of permeability and is internally formed modification layer in machined object.Laser
Beam illumination unit 6 at least has：Oscillator 7, it vibrates pulse laser beam；And concentrator 8, it is used to make oscillator 7 shake
Swing the desired position that the pulse laser beam is focused at the inside of machined object.Have in oscillator 7 to pulse laser beam
Output the output adjustment portion and repetition rate configuration part that are adjusted.Laser beam irradiation unit 6 can be in above-below direction (Z axis
Direction) on move, and move up and down concentrator 8, and converged position of the pulse laser beam on machined object can be adjusted
To desired position.
There is processing feed unit 20 in the lower section of holding unit 4, the processing feed unit 20 is to holding unit 4 and laser
Beam illumination unit 6 is relatively processed feeding.Processing feed unit 20 has：Ball-screw 21, it prolongs in the X-axis direction
Stretch；Motor 22, it is connected with one end of ball-screw 21；A pair of guide rails 23, it is extended parallel to ball-screw 21；And
Mobile foundation 24, it is supported to holding unit 4 from below.The face of a pair of guide rails 23 and the side of mobile foundation 24, which is slided, to be connect
Touch, the nut of central portion of the ball-screw 21 with being formed at mobile foundation 24 is screwed togather.When motor 22 rotates ball-screw 21
When, mobile foundation 24 is moved in the X-axis direction along guide rail 23, and holding unit 4 can be made to move in the X-axis direction.
Indexable feed unit 30 is equipped with the upper surface 2a of base station 2, the indexable feed unit 30 is fed with processing
To holding unit 4 and processing feed unit 20 on the vertical direction (Y direction) of the processing direction of feed (X-direction) of unit 20
Carry out indexable feeding.Indexable feed unit 30 has：Ball-screw 31, it extends in the Y-axis direction；Motor 32, itself and rolling
One end connection of ballscrew 31；A pair of guide rails 33, it is extended parallel to ball-screw 31；And mobile foundation 34, it is under
Side is supported to holding unit 4 and processing feed unit 20.The face of a pair of guide rails 33 and the side of mobile foundation 34, which is slided, to be connect
Touch, the nut of central portion of the ball-screw 31 with being formed at mobile foundation 34 is screwed togather.When motor 32 rotates ball-screw 31
When, mobile foundation 34 is moved in the Y-axis direction along guide rail 33, and holding unit 4 and processing can be fed in the Y-axis direction
Unit 20 carries out indexable feeding.
Then, the processing method of the chip to being processed using laser processing device 1 to the wafer W shown in Fig. 2 is carried out
Explanation.Wafer W is one of the machined object for the circular plate-like shape for implementing Laser Processing, for example, with the base being made up of silicon (Si)
Plate.On the positive Wa of the substrate multiple devices are formed with the region marked off by a plurality of segmentation preset lines S of clathrate
D.The back side Wb of the side opposite with positive Wa turns into for the incident plane of illumination of pulse laser beam described later.
Although not illustrated, such as protection band is pasted with the positive Wa of wafer W.On wafer W, it is pasted onto just
Protection band side on the Wa of face is maintained on the holding unit 4 shown in Fig. 1, and back side Wb exposes upward.Also, pass through processing
Feed unit 20 makes the holding unit 4 that remain wafer W move in the X-axis direction, and wafer W is moved to laser beam irradiation
The lower section of unit 6.
(1) layer forming step is modified
The focal point of the pulse laser beam of the wavelength for wafer W with permeability is determined by laser beam irradiation unit 6
Position the inside of wafer W desired position and from the area illumination pulse corresponding with splitting preset lines S of Wb pairs of the back side of wafer W
Laser beam, and feeding is relatively processed to holding unit 4 and laser beam irradiation unit 6, so that in the inside shape of wafer W
Into modification layer.For example, being set to following processing conditions to implement to modify layer forming step.Also, modify layer forming step extremely
The 1st step and second step of following explanation is included less to implement.
【Processing conditions】
Light source：YAG pulse lasers
Wavelength：1342nm
Average output：0.8W
Repetition rate：60kHz
Spot diameter：1.5μm
Process feed speed：700mm/s
(1-1) the 1st step
From laser beam irradiation unit 6 towards wafer W irradiated with pulse laser beam, as shown in figure 3, being internally formed in wafer W
1st modification layer 10.Specifically, laser beam irradiation unit 6 is adjusted so that concentrator 8 is in the direction close with wafer W
It is upper to decline and the pulse laser beam LB1 of the wavelength (1342nm) for wafer W with permeability focal point 9a is positioned at leaned on
The position of 1st depth H 1 of the positive Wa sides of nearly wafer W.The distance between positive Wa and the 1st depth H 1 of wafer W 101 is for example
It is set to 60~70 μm.Also, pulse laser beam LB1 output is set to low output, so that from formation in wafer W
The cracking (crackle) that the 1st modification layer 10 in portion is produced is not stretched longlyer on the thickness direction of wafer W.
Then, while with it is defined processing feed speed (700mm/s) wafer W is processed for example on X1 directions into
Give, while making laser beam irradiation unit 6 shown in Fig. 1 along segmentation back side Wb side irradiated with pulse laser of the preset lines S from wafer W
Beam LB1 and wafer W be internally formed intensity decreases the 1st modification layer 10.In addition, the length L1 of the 1st modification layer 10 is for example
For 30 μm or so.
In the example in fig. 3, due to modifying the end of layer 10 towards the thickness of wafer W from formation the 1st of the inside of wafer W
The cracking 11 that direction is produced is shorter, changes so being impinged upon in the absence of the pulse laser beam LB1 next irradiated from the 1st formed before
The situation for causing the transmitted light that refraction or reflection occur at cracking 11 in the cracking 11 that matter layer 10 is produced.So, along Fig. 2
Shown column split preset lines S irradiated with pulse laser beam LB1 and be internally formed the 1st modification layer 10 in wafer W.
(1-2) second step
After the 1st step is implemented, along formd in the 1st step the 1st modification layer 10 segmentation preset lines S from swash
Light beam illumination unit 6 is towards wafer W irradiated with pulse laser beam, as shown in figure 4, being internally formed the 2nd modification layer 12 in wafer W.
Pulse laser beam LB2 output is set to low output in second step, so as to change from being formed the 2nd of the inside of wafer W
The cracking that matter layer 12 is produced will not longlyer stretch on the thickness direction of wafer W.
Laser beam irradiation unit 6 shown in Fig. 1 is adjusted so that concentrator 8 is on from the remote direction of wafer W
Rise, and it is as shown in figure 4, the pulse laser beam LB2 of the wavelength (1342nm) for wafer W with permeability focal point 9b is fixed
Position is in the position of the 2nd depth H 2 of the back side Wb sides for the close wafer W for separating defined interval 100 upward from focal point 9a
Put.Defined interval 100 is the interval between the 1st modification modification layer 12 of layer 10 and the 2nd, i.e. the 1st depth H 1 and the 2nd depth H 2 it
Between interval.
On defined interval 100, led to not make the cracking of the 1st modification layer 10 and the 2nd modification layer 12 continuous each other
Cause the cracking 13 especially produced from the 2nd modification layer 12 to the back side Wb sides of wafer W it is longer stretch, and by the defined interval
100 are set to the cracking discontinuous interval each other produced from the 1st modification modification layer 12 of layer 10 and the 2nd.It is preferred that between this is defined
For example it is set as between 45~120 μm every 100.
Then, while with it is defined processing feed speed (700mm/s) wafer W is processed for example on X2 directions into
Give, while making laser beam irradiation unit 6 shown in Fig. 1 along foring the segmentation preset lines S of the 1st modification layer 10 from wafer W
Back side Wb sides irradiated with pulse laser beam LB2, so as to form intensity decreases in the top of the 1st modification layer 10 in the inside of wafer W
The 2nd modification layer 12.In addition, the length L2 of the 2nd modification layer 12 is, for example, 30 μm or so.
With the 1st modification layer 10 similarly, since the tortoise produced from the end of the 2nd modification layer 12 towards the thickness direction of wafer W
Split it is 13 shorter, so impinging upon what is produced from the 2nd modification layer 12 formed before in the absence of the pulse laser beam LB2 next irradiated
Cause the transmitted light that the situation of refraction or reflection occurs at cracking 13 in cracking 13.Also, due to the 1st modification layer 10 with
Interval 100 as defined in being provided between 2nd modification layer 12, so the tortoise produced from the 1st modification layer 10 is not present in second step
Split 11 and the cracking 13 that is produced from the 2nd modification layer is continuous and situation that connected longlyer on the thickness direction of wafer W.In addition,
Even if pulse laser beam LB2 light leak LB2 ' at the cracking 11 produced from the 1st modification layer 10 such as because occurring reflection, scattering
And shine on device, due to energy attenuation, so also harmful effect will not be brought to device.
So, using the 1st step and second step as 1 group, the segmentation preset lines S of a row is laser machined.Pass through figure
Indexable feed unit 30 shown in 1 carries out indexable feeding to holding unit 4 in the Y-axis direction, thus, carries out pulse laser beam
The switching for the segmentation preset lines S that LB1 and pulse laser beam LB2 are irradiated.Also, repeat along whole segmentation preset lines S
The step of row the 1st and second step, in the 1st modification modification layer 12 of layer 10 and the 2nd being internally formed as segmentation starting point of wafer W.
(2) segmentation step
After modification layer forming step is implemented, external force is applied to wafer W and layer is modified with the 1st modification layer 10 and the 2nd
12 split wafer W along segmentation preset lines S for segmentation starting point.For example, it is also possible to be ground by the back side carried out by grinding grinding tool
Cut to carry out the segmentation of wafer W.In this case, while being pressed by the grinding grinding tool of rotation the back side Wb of wafer W,
While carrying out thinning to wafer W until reaching desired thickness, and it is to split with the 1st modification modification layer 12 of layer 10 and the 2nd
Wafer W is divided into the device chip with each device D by point by grinding action.
Segmentation step for example can also be carried out by expanding.In this case, elastic webbing is being pasted onto to the back of the body of wafer W
In the state of the Wb of face, the elastic webbing is radially expanded, thus, external force is applied to the inside of wafer W, it is incessantly outer to bear
Wafer W is divided into the device chip with each device D by the 1st modification layer 10 and the 2nd modification layer 12 of power for segmentation starting point.
In this case, before above-mentioned modification layer forming step, wafer W is thinned into desired thickness in advance.Removed by (not shown)
Go out unit etc. to be picked up to so splitting obtained device chip and be transported to next process.
So, the modification layer forming step having on the processing method of chip, the reality including at least the steps
Apply：1st step, pulse laser beam LB1 focal point 9a is positioned close to the position of the 1st depth H 1 of the positive Wa sides of wafer W
Put and irradiated with pulse laser beam LB1 so as to formed the 1st modification layer 10；And second step, by pulse laser beam LB2 focal point
9b is positioned at the position of the 2nd depth H 2 of the close back side Wb sides that defined interval 100 is separated away from the 1st modification layer 10 and irradiates arteries and veins
Laser beam LB2 is so as to form the 2nd modification layer 12, in modification layer forming step, due to the output progress to pulse laser beam
Being set so that the cracking 11,13 produced from the 1st modification modification layer 12 of layer 10 and the 2nd turns into will not be with the pulse next irradiated
The length that laser beam meets, and defined interval 100 is set to the tortoise from the 1st modification modification generation of layer 12 of layer 10 and the 2nd
Discontinuous interval each other is split, so the cracking 11,13 produced from the 1st modification modification layer 12 of layer 10 and the 2nd will not be in wafer W
Stretched longlyer on thickness direction, the cracking produced from the 1st modification layer 10 and the 2nd modification layer 12 will not be longer because continuous each other
Ground is connected.
Therefore, it is possible to suppress irradiated with pulse laser beam LB1 before pulse laser beam LB1, LB2 for next irradiating are impinged upon,
Occur reflection/scattering in cracking 11,13 formed by LB2, can prevent from being formed the device D on the positive Wa of wafer W and damage
Wound.
In the modification layer forming step shown in present embodiment, to being internally formed two modification layers (the in wafer W
1 modification layer 10 and the 2nd modification layer 12) situation be illustrated, but formed the inside of wafer W modification layer quantity not
It is only limitted to this.For example, layer can be modified to two modification layer increases the 3rd and in the 3 modification layers that are internally formed of wafer W, also may be used
To modify layer to 3 modification layer increases the 4th 4 modification layers are internally formed in wafer W.Equally in this case, each modification
Interval between layer is set to make from the cracking of each modification layer generation discontinuous interval each other.
【Embodiment 1】
Then, one side reference picture 5, while to the crevasse crack propagation because of the modification layer generation from the inside of wafer W in wafer W
Positive Wa on the evaluation experimental of the generation quantity of damage that produces and device D segmentation rate illustrate.In the present embodiment,
Which kind of degree is set as to the defined interval between the 1st modification modification layer 12 of layer 10 and the 2nd of the inside that will be formed in wafer W
Interval can obtain good result and tested.The use of be formed as a diameter of 300mm, thickness is 775 μ as wafer W
M and on front the aluminium film covered with 100nm silicon wafer.The distance setting of layer 10 will be modified from the positive Wa to the 1st of wafer W
For 60 μm.The defined interval of layer 12 is modified for the 1st modification layer 10 and the 2nd, according to every 10 μm between 20~140 μm
Interval setting, the processing same with above-mentioned modification layer forming step and above-mentioned segmentation step is carried out to each wafer W, and in crystalline substance
The number of damage (damage in aluminium film) and device D segmentation rate produced on piece W positive Wa is measured.The generation of damage
Quantity is that the number of the damage produced on 1 line of the segmentation preset lines S at the central portion to wafer W is counted and obtained
's.Also, device D segmentation rate is calculated in the following way：By actually split obtained device D number divided by
The total device count that can be obtained from 1 wafer W.
As shown in Fig. 5 chart, between as defined in the 1st modification modification layer 12 of layer 10 and the 2nd at intervals of 20~40 μm
When, device D segmentation rate is 100%, but generates on the positive Wa of wafer W the damage of more than 10.When defined interval
During between 45 μm~120 μm, there is no the generation of damage on the positive Wa of wafer W, device D segmentation rate is also 100%.So
Afterwards, when it is defined at intervals of more than 120 μm when, there is no the generation of damage, but device D segmentation rate on the positive Wa of wafer W
It is reduced to 60~70% or so.
So, it is thus identified that although can be obtained entirely from 1 wafer W in the case of defined interval narrower (20~40 μm)
The device D in portion, but more damage can be produced on the positive Wa of wafer W.On the other hand, it is thus identified that although at defined interval
Damaged farther out in the case of (more than 120 μm) on the positive Wa of wafer W without generation, but device D segmentation rate is deteriorated.Cause
This, it is thus identified that by defined interval it is set as that most good result can be obtained in the case of 45~120 μm.
Claims (1)
1. a kind of processing method of chip, is formed by laser processing device to being divided on front by a plurality of segmentation preset lines
The chip for having multiple devices is processed, and the laser processing device has：Holding unit, it keeps to machined object；Swash
Light beam illumination unit, it irradiates the pulse laser beam of the wavelength for the machined object that the holding unit is kept with permeability
And it is internally formed modification layer in machined object；And processing feed unit, it irradiates single to the holding unit and the laser beam
Member is relatively processed feeding, and the processing method of the chip is characterised by, with the steps：
Layer forming step is modified, the focal point of the pulse laser beam of the wavelength for chip with permeability is positioned at chip
It is internal and from the back side pair of chip area illumination pulse laser beam corresponding with the segmentation preset lines, and to the holding unit with
The laser beam irradiation unit is relatively processed feeding, so as to be internally formed modification layer in chip；And
Segmentation step, is to split with modification layer to chip application external force after modification layer forming step is implemented
Point splits chip along the segmentation preset lines,
Modification layer forming step comprises at least the steps：
1st step, the focal point of the pulse laser beam is positioned at the position of the 1st depth of the face side of chip and irradiates the arteries and veins
Laser beam modifies layer so as to form the 1st；And
Second step, the focal point of the pulse laser beam is positioned at and separates the defined rear side being spaced away from the 1st modification layer
The position of 2nd depth and irradiate the pulse laser beam so as to formed the 2nd modification layer,
In modification layer forming step, the output to pulse laser beam is set so that from the 1st modification layer and the 2nd
The cracking that modification layer is produced turns into the length that will not be met with the pulse laser beam next irradiated, and the defined interval quilt
It is set as making the cracking that produces from the 1st modification layer and the 2nd modification layer discontinuous interval each other.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015238413A JP2017107903A (en) | 2015-12-07 | 2015-12-07 | Processing method of wafer |
| JP2015-238413 | 2015-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107030377A true CN107030377A (en) | 2017-08-11 |
Family
ID=59060039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611101179.5A Pending CN107030377A (en) | 2015-12-07 | 2016-12-05 | The processing method of chip |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017107903A (en) |
| KR (1) | KR20170067141A (en) |
| CN (1) | CN107030377A (en) |
| TW (1) | TW201720566A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110039204A (en) * | 2018-01-16 | 2019-07-23 | 株式会社迪思科 | The laser processing of machined object |
| CN110620038A (en) * | 2018-06-19 | 2019-12-27 | 株式会社迪思科 | Method for processing workpiece |
| CN111571043A (en) * | 2019-02-19 | 2020-08-25 | 株式会社迪思科 | Method for processing wafer |
| CN113710408A (en) * | 2019-04-19 | 2021-11-26 | 东京毅力科创株式会社 | Processing apparatus and processing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6896344B2 (en) * | 2017-09-22 | 2021-06-30 | 株式会社ディスコ | Chip manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005268752A (en) * | 2004-02-19 | 2005-09-29 | Canon Inc | Method of laser cutting, workpiece and semiconductor-element chip |
| CN101134265A (en) * | 2000-09-13 | 2008-03-05 | 浜松光子学株式会社 | Laser processing method and method of cutting semiconductor material substrate |
| CN102470484A (en) * | 2009-08-11 | 2012-05-23 | 浜松光子学株式会社 | Laser machining device and laser machining method |
| JP2015199071A (en) * | 2014-04-04 | 2015-11-12 | 浜松ホトニクス株式会社 | Laser processing apparatus and laser processing method |
-
2015
- 2015-12-07 JP JP2015238413A patent/JP2017107903A/en active Pending
-
2016
- 2016-10-27 TW TW105134771A patent/TW201720566A/en unknown
- 2016-11-28 KR KR1020160159092A patent/KR20170067141A/en unknown
- 2016-12-05 CN CN201611101179.5A patent/CN107030377A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101134265A (en) * | 2000-09-13 | 2008-03-05 | 浜松光子学株式会社 | Laser processing method and method of cutting semiconductor material substrate |
| JP2005268752A (en) * | 2004-02-19 | 2005-09-29 | Canon Inc | Method of laser cutting, workpiece and semiconductor-element chip |
| CN102470484A (en) * | 2009-08-11 | 2012-05-23 | 浜松光子学株式会社 | Laser machining device and laser machining method |
| JP2015199071A (en) * | 2014-04-04 | 2015-11-12 | 浜松ホトニクス株式会社 | Laser processing apparatus and laser processing method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110039204A (en) * | 2018-01-16 | 2019-07-23 | 株式会社迪思科 | The laser processing of machined object |
| CN110620038A (en) * | 2018-06-19 | 2019-12-27 | 株式会社迪思科 | Method for processing workpiece |
| CN110620038B (en) * | 2018-06-19 | 2024-03-12 | 株式会社迪思科 | Method for processing object to be processed |
| CN111571043A (en) * | 2019-02-19 | 2020-08-25 | 株式会社迪思科 | Method for processing wafer |
| CN113710408A (en) * | 2019-04-19 | 2021-11-26 | 东京毅力科创株式会社 | Processing apparatus and processing method |
| CN113710408B (en) * | 2019-04-19 | 2023-10-31 | 东京毅力科创株式会社 | Processing apparatus and processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170067141A (en) | 2017-06-15 |
| TW201720566A (en) | 2017-06-16 |
| JP2017107903A (en) | 2017-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107030377A (en) | The processing method of chip | |
| CN105531072B (en) | The method for carrying out material cutting to workpiece by pulse laser rays | |
| US10755980B2 (en) | Laser processing method | |
| TWI631665B (en) | Optical device processing method | |
| KR101124347B1 (en) | Method and apparatus for machining based on titled laser scanning | |
| CN104690429B (en) | The processing method of optical device wafer | |
| TW201033144A (en) | Method for laser processing glass with a chamfered edge | |
| CN108161215A (en) | The generation method of SiC chips | |
| TWI683359B (en) | Wafer processing method | |
| CN107790898A (en) | The generation method of SiC wafer | |
| JP2006167804A5 (en) | ||
| TW201625393A (en) | Wafer formation method | |
| JP2007258236A (en) | Parting method of semiconductor substrate, and semiconductor chip manufactured thereby | |
| JP2014078556A (en) | Wafer processing method | |
| TW201705243A (en) | Method for manufacturing optical device chip | |
| JP2011104633A (en) | Scribing method | |
| CN105789125A (en) | Wafer processing method | |
| CN108705208A (en) | The cutting method and cutter device of the brittle material substrate of tape tree lipid layer | |
| CN105479019A (en) | Method for processing wafer | |
| CN105489553A (en) | Processing method of wafer | |
| JP2013118413A (en) | Led chip | |
| KR20130033114A (en) | Laser processing method | |
| JPH0434931A (en) | Semiconductor wafer and processing method therefor | |
| TWI704608B (en) | Wafer processing method | |
| KR20190019839A (en) | Wafer processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170811 |
|
| WD01 | Invention patent application deemed withdrawn after publication |