JP2002234792A - 単結晶製造方法 - Google Patents
単結晶製造方法Info
- Publication number
- JP2002234792A JP2002234792A JP2001030363A JP2001030363A JP2002234792A JP 2002234792 A JP2002234792 A JP 2002234792A JP 2001030363 A JP2001030363 A JP 2001030363A JP 2001030363 A JP2001030363 A JP 2001030363A JP 2002234792 A JP2002234792 A JP 2002234792A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- shielding material
- opening
- crucible
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 claims abstract description 41
- 239000007788 liquid Substances 0.000 claims abstract description 30
- 239000000565 sealant Substances 0.000 claims abstract description 28
- 239000002994 raw material Substances 0.000 claims description 17
- 239000000155 melt Substances 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001030363A JP2002234792A (ja) | 2001-02-07 | 2001-02-07 | 単結晶製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001030363A JP2002234792A (ja) | 2001-02-07 | 2001-02-07 | 単結晶製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002234792A true JP2002234792A (ja) | 2002-08-23 |
| JP2002234792A5 JP2002234792A5 (enExample) | 2004-11-25 |
Family
ID=18894589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001030363A Pending JP2002234792A (ja) | 2001-02-07 | 2001-02-07 | 単結晶製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002234792A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006096619A (ja) * | 2004-09-29 | 2006-04-13 | Hitachi Chem Co Ltd | 単結晶の製造方法およびその装置 |
| US7245341B2 (en) | 2003-05-28 | 2007-07-17 | Sony Corporation | Laminated structure, display device and display unit employing same |
| WO2018179567A1 (ja) | 2017-03-31 | 2018-10-04 | Ｊｘ金属株式会社 | 化合物半導体および化合物半導体単結晶の製造方法 |
| WO2022168369A1 (ja) | 2021-02-02 | 2022-08-11 | Ｊｘ金属株式会社 | リン化インジウム基板、半導体エピタキシャルウエハ、リン化インジウム単結晶インゴットの製造方法及びリン化インジウム基板の製造方法 |
-
2001
- 2001-02-07 JP JP2001030363A patent/JP2002234792A/ja active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10170725B2 (en) | 2003-05-28 | 2019-01-01 | Sony Corporation | Laminated structure, display device and display unit employing same |
| US7245341B2 (en) | 2003-05-28 | 2007-07-17 | Sony Corporation | Laminated structure, display device and display unit employing same |
| US8963417B2 (en) | 2003-05-28 | 2015-02-24 | Sony Corporation | Organic light emitting device, display unit, and device comprising a display unit |
| US9041629B2 (en) | 2003-05-28 | 2015-05-26 | Sony Corporation | Laminated structure, display device and display unit employing same |
| US9048451B2 (en) | 2003-05-28 | 2015-06-02 | Sony Corporation | Laminated structure, display device and display unit employing same |
| US9431627B2 (en) | 2003-05-28 | 2016-08-30 | Sony Corporation | Laminated structure, display device and display unit employing same |
| US9761825B2 (en) | 2003-05-28 | 2017-09-12 | Sony Corporation | Laminated structure, display device and display unit employing same |
| JP2006096619A (ja) * | 2004-09-29 | 2006-04-13 | Hitachi Chem Co Ltd | 単結晶の製造方法およびその装置 |
| CN109963967A (zh) * | 2017-03-31 | 2019-07-02 | Ｊｘ金属株式会社 | 化合物半导体及化合物半导体单晶的制造方法 |
| WO2018179567A1 (ja) | 2017-03-31 | 2018-10-04 | Ｊｘ金属株式会社 | 化合物半導体および化合物半導体単結晶の製造方法 |
| KR20190043626A (ko) | 2017-03-31 | 2019-04-26 | 제이엑스금속주식회사 | 화합물 반도체 및 화합물 반도체 단결정의 제조 방법 |
| JPWO2018179567A1 (ja) * | 2017-03-31 | 2020-02-13 | Ｊｘ金属株式会社 | 化合物半導体および化合物半導体単結晶の製造方法 |
| TWI699464B (zh) * | 2017-03-31 | 2020-07-21 | 日商Ｊｘ金屬股份有限公司 | 化合物半導體及化合物半導體單晶之製造方法 |
| CN109963967B (zh) * | 2017-03-31 | 2021-07-20 | Ｊｘ金属株式会社 | 化合物半导体及化合物半导体单晶的制造方法 |
| KR102288693B1 (ko) * | 2017-03-31 | 2021-08-11 | 제이엑스금속주식회사 | 화합물 반도체 및 화합물 반도체 단결정의 제조 방법 |
| US11371164B2 (en) | 2017-03-31 | 2022-06-28 | Jx Nippon Mining & Metals Corporation | Compound semiconductor and method for producing single crystal of compound semiconductor |
| WO2022168369A1 (ja) | 2021-02-02 | 2022-08-11 | Ｊｘ金属株式会社 | リン化インジウム基板、半導体エピタキシャルウエハ、リン化インジウム単結晶インゴットの製造方法及びリン化インジウム基板の製造方法 |
| US11926924B2 (en) | 2021-02-02 | 2024-03-12 | Jx Metals Corporation | Indium phosphide substrate, semiconductor epitaxial wafer, method for producing indium phosphide single-crystal ingot and method for producing indium phosphide substrate |
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