JP2002217274A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2002217274A
JP2002217274A JP2001010850A JP2001010850A JP2002217274A JP 2002217274 A JP2002217274 A JP 2002217274A JP 2001010850 A JP2001010850 A JP 2001010850A JP 2001010850 A JP2001010850 A JP 2001010850A JP 2002217274 A JP2002217274 A JP 2002217274A
Authority
JP
Japan
Prior art keywords
substrate
film
semiconductor device
substrates
cassette
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001010850A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002217274A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001010850A priority Critical patent/JP2002217274A/ja
Publication of JP2002217274A publication Critical patent/JP2002217274A/ja
Publication of JP2002217274A5 publication Critical patent/JP2002217274A5/ja
Withdrawn legal-status Critical Current

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JP2001010850A 2001-01-18 2001-01-18 半導体装置の作製方法 Withdrawn JP2002217274A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001010850A JP2002217274A (ja) 2001-01-18 2001-01-18 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001010850A JP2002217274A (ja) 2001-01-18 2001-01-18 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2002217274A true JP2002217274A (ja) 2002-08-02
JP2002217274A5 JP2002217274A5 (enExample) 2008-02-28

Family

ID=18878086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001010850A Withdrawn JP2002217274A (ja) 2001-01-18 2001-01-18 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2002217274A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004113205A1 (ja) * 2003-06-19 2004-12-29 Rorze Corporation 薄板支持体
JP2006203038A (ja) * 2005-01-21 2006-08-03 Fujitsu Ltd 窒化膜の形成方法、半導体装置の製造方法、キャパシタの製造方法及び窒化膜形成装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308928A (ja) * 1987-06-11 1988-12-16 Fuji Electric Co Ltd ウエハ搬送装置
JPH07130692A (ja) * 1993-10-29 1995-05-19 Disco Abrasive Syst Ltd 平面研削装置
JPH10326820A (ja) * 1997-05-23 1998-12-08 Dainippon Screen Mfg Co Ltd 基板搬送装置
JP2000142876A (ja) * 1999-01-01 2000-05-23 Sharp Corp 基板収納カセット
JP2000356788A (ja) * 1999-04-15 2000-12-26 Semiconductor Energy Lab Co Ltd 電気光学装置及び電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308928A (ja) * 1987-06-11 1988-12-16 Fuji Electric Co Ltd ウエハ搬送装置
JPH07130692A (ja) * 1993-10-29 1995-05-19 Disco Abrasive Syst Ltd 平面研削装置
JPH10326820A (ja) * 1997-05-23 1998-12-08 Dainippon Screen Mfg Co Ltd 基板搬送装置
JP2000142876A (ja) * 1999-01-01 2000-05-23 Sharp Corp 基板収納カセット
JP2000356788A (ja) * 1999-04-15 2000-12-26 Semiconductor Energy Lab Co Ltd 電気光学装置及び電子機器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004113205A1 (ja) * 2003-06-19 2004-12-29 Rorze Corporation 薄板支持体
JP2006203038A (ja) * 2005-01-21 2006-08-03 Fujitsu Ltd 窒化膜の形成方法、半導体装置の製造方法、キャパシタの製造方法及び窒化膜形成装置
US7696107B2 (en) 2005-01-21 2010-04-13 Fujitsu Microelectronics Limited Nitride film forming method, semiconductor device fabrication method, capacitor fabrication method and nitride film forming apparatus
US7951727B2 (en) 2005-01-21 2011-05-31 Fujitsu Semiconductor Limited Capacitor fabrication method

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