JP2002198499A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JP2002198499A JP2002198499A JP2000395933A JP2000395933A JP2002198499A JP 2002198499 A JP2002198499 A JP 2002198499A JP 2000395933 A JP2000395933 A JP 2000395933A JP 2000395933 A JP2000395933 A JP 2000395933A JP 2002198499 A JP2002198499 A JP 2002198499A
- Authority
- JP
- Japan
- Prior art keywords
- bit line
- memory cell
- transistor
- write
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000012546 transfer Methods 0.000 claims description 85
- 238000003860 storage Methods 0.000 claims description 18
- 238000003491 array Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 30
- 229920005591 polysilicon Polymers 0.000 description 30
- 102000000582 Retinoblastoma-Like Protein p107 Human genes 0.000 description 11
- 108010002342 Retinoblastoma-Like Protein p107 Proteins 0.000 description 11
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 101100247438 Arabidopsis thaliana RBL3 gene Proteins 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 101150073928 MCA3 gene Proteins 0.000 description 3
- 102000004642 Retinoblastoma-Like Protein p130 Human genes 0.000 description 3
- 108010003494 Retinoblastoma-Like Protein p130 Proteins 0.000 description 3
- 101100166255 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CEP3 gene Proteins 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- AYNSTGCNKVUQIL-UHFFFAOYSA-N C(CCCCCCCCCCC)C=1C=CC(=C(C=1)C1=NC(=CC(=C1)N(CCN(C)C)C)C1=C(C=CC(=C1)CCCCCCCCCCCC)OC)OC Chemical compound C(CCCCCCCCCCC)C=1C=CC(=C(C=1)C1=NC(=CC(=C1)N(CCN(C)C)C)C1=C(C=CC(=C1)CCCCCCCCCCCC)OC)OC AYNSTGCNKVUQIL-UHFFFAOYSA-N 0.000 description 2
- 101100495436 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CSE4 gene Proteins 0.000 description 2
- 101100309034 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RTF1 gene Proteins 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 1
- 101150068401 BSL1 gene Proteins 0.000 description 1
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000395933A JP2002198499A (ja) | 2000-12-26 | 2000-12-26 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000395933A JP2002198499A (ja) | 2000-12-26 | 2000-12-26 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002198499A true JP2002198499A (ja) | 2002-07-12 |
| JP2002198499A5 JP2002198499A5 (enrdf_load_stackoverflow) | 2005-07-14 |
Family
ID=18861309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000395933A Pending JP2002198499A (ja) | 2000-12-26 | 2000-12-26 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002198499A (enrdf_load_stackoverflow) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042172A (ja) * | 2005-08-01 | 2007-02-15 | Sony Corp | 半導体メモリ装置 |
| JP2012212499A (ja) * | 2011-03-18 | 2012-11-01 | Semiconductor Energy Lab Co Ltd | 記憶装置及び電子機器 |
| JP2012256818A (ja) * | 2010-08-16 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2013146039A1 (ja) * | 2012-03-30 | 2013-10-03 | シャープ株式会社 | 半導体記憶装置 |
| CN103367369A (zh) * | 2012-03-28 | 2013-10-23 | 三星电子株式会社 | 半导体存储器件 |
| US8941173B2 (en) | 2012-03-22 | 2015-01-27 | Samsung Electronics Co., Ltd. | Capacitorless memory device |
| JP2017126763A (ja) * | 2012-03-05 | 2017-07-20 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| CN115440265A (zh) * | 2021-06-01 | 2022-12-06 | 长鑫存储技术有限公司 | 存储器 |
| JP2022184976A (ja) * | 2010-08-06 | 2022-12-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2023156396A (ja) * | 2012-02-29 | 2023-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2024194726A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び、半導体装置の作製方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07321228A (ja) * | 1994-05-26 | 1995-12-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JPH11126491A (ja) * | 1997-08-20 | 1999-05-11 | Fujitsu Ltd | 半導体記憶装置 |
| JP2000269358A (ja) * | 1999-03-17 | 2000-09-29 | Hitachi Ltd | 半導体装置およびその製造方法 |
-
2000
- 2000-12-26 JP JP2000395933A patent/JP2002198499A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07321228A (ja) * | 1994-05-26 | 1995-12-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JPH11126491A (ja) * | 1997-08-20 | 1999-05-11 | Fujitsu Ltd | 半導体記憶装置 |
| JP2000269358A (ja) * | 1999-03-17 | 2000-09-29 | Hitachi Ltd | 半導体装置およびその製造方法 |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042172A (ja) * | 2005-08-01 | 2007-02-15 | Sony Corp | 半導体メモリ装置 |
| JP7470754B2 (ja) | 2010-08-06 | 2024-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2022184976A (ja) * | 2010-08-06 | 2022-12-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2012256818A (ja) * | 2010-08-16 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US9343480B2 (en) | 2010-08-16 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9627386B2 (en) | 2011-03-18 | 2017-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| US9385128B2 (en) | 2011-03-18 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
| JP2012212499A (ja) * | 2011-03-18 | 2012-11-01 | Semiconductor Energy Lab Co Ltd | 記憶装置及び電子機器 |
| JP7637730B2 (ja) | 2012-02-29 | 2025-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7657266B2 (ja) | 2012-02-29 | 2025-04-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US12382723B2 (en) | 2012-02-29 | 2025-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2023156397A (ja) * | 2012-02-29 | 2023-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2023156396A (ja) * | 2012-02-29 | 2023-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10170630B2 (en) | 2012-03-05 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor memory device |
| JP2021121027A (ja) * | 2012-03-05 | 2021-08-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7360416B2 (ja) | 2012-03-05 | 2023-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018133581A (ja) * | 2012-03-05 | 2018-08-23 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| JP2017126763A (ja) * | 2012-03-05 | 2017-07-20 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| JP2024177410A (ja) * | 2012-03-05 | 2024-12-19 | 株式会社半導体エネルギー研究所 | 半導体記憶装置 |
| US8941173B2 (en) | 2012-03-22 | 2015-01-27 | Samsung Electronics Co., Ltd. | Capacitorless memory device |
| US8809930B2 (en) | 2012-03-28 | 2014-08-19 | Samsung Electronics Co., Ltd. | Semiconductor memory devices |
| CN103367369A (zh) * | 2012-03-28 | 2013-10-23 | 三星电子株式会社 | 半导体存储器件 |
| WO2013146039A1 (ja) * | 2012-03-30 | 2013-10-03 | シャープ株式会社 | 半導体記憶装置 |
| CN115440265A (zh) * | 2021-06-01 | 2022-12-06 | 长鑫存储技术有限公司 | 存储器 |
| CN115440265B (zh) * | 2021-06-01 | 2024-05-17 | 长鑫存储技术有限公司 | 存储器 |
| WO2024194726A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び、半導体装置の作製方法 |
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