JP2002198311A - 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 - Google Patents
多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置Info
- Publication number
- JP2002198311A JP2002198311A JP2000391778A JP2000391778A JP2002198311A JP 2002198311 A JP2002198311 A JP 2002198311A JP 2000391778 A JP2000391778 A JP 2000391778A JP 2000391778 A JP2000391778 A JP 2000391778A JP 2002198311 A JP2002198311 A JP 2002198311A
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- Japan
- Prior art keywords
- film
- thin film
- hydrogen
- semiconductor thin
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
- Cold Cathode And The Manufacture (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000391778A JP2002198311A (ja) | 2000-12-25 | 2000-12-25 | 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
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| JP2000391778A JP2002198311A (ja) | 2000-12-25 | 2000-12-25 | 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置 |
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| Publication Number | Publication Date |
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| JP2002198311A true JP2002198311A (ja) | 2002-07-12 |
| JP2002198311A5 JP2002198311A5 (enrdf_load_stackoverflow) | 2007-05-17 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002294451A (ja) * | 2001-03-30 | 2002-10-09 | Sony Corp | 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置 |
| JP2010056560A (ja) * | 2007-08-10 | 2010-03-11 | Mitsubishi Electric Corp | カーボン膜成膜装置 |
| US7807495B2 (en) | 2007-04-23 | 2010-10-05 | Sanyo Electric Co., Ltd. | Method of manufacturing semiconductor film and method of manufacturing photovoltaic element |
| JP2013033998A (ja) * | 2009-09-04 | 2013-02-14 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8570456B2 (en) | 2005-08-12 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device equipped with the semiconductor device |
| JP2019145806A (ja) * | 2008-09-19 | 2019-08-29 | 株式会社半導体エネルギー研究所 | 表示装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0574713A (ja) * | 1991-09-17 | 1993-03-26 | Nippondenso Co Ltd | 非晶質半導体薄膜の製造方法 |
| JP2000101088A (ja) * | 1998-09-22 | 2000-04-07 | Sony Corp | 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法 |
| JP2000243712A (ja) * | 1999-02-24 | 2000-09-08 | Sony Corp | 成膜方法及びその装置 |
| JP2000269139A (ja) * | 1999-03-16 | 2000-09-29 | Sony Corp | 多結晶シリコン膜の形成方法 |
-
2000
- 2000-12-25 JP JP2000391778A patent/JP2002198311A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0574713A (ja) * | 1991-09-17 | 1993-03-26 | Nippondenso Co Ltd | 非晶質半導体薄膜の製造方法 |
| JP2000101088A (ja) * | 1998-09-22 | 2000-04-07 | Sony Corp | 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法 |
| JP2000243712A (ja) * | 1999-02-24 | 2000-09-08 | Sony Corp | 成膜方法及びその装置 |
| JP2000269139A (ja) * | 1999-03-16 | 2000-09-29 | Sony Corp | 多結晶シリコン膜の形成方法 |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002294451A (ja) * | 2001-03-30 | 2002-10-09 | Sony Corp | 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置 |
| US8570456B2 (en) | 2005-08-12 | 2013-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device equipped with the semiconductor device |
| US7807495B2 (en) | 2007-04-23 | 2010-10-05 | Sanyo Electric Co., Ltd. | Method of manufacturing semiconductor film and method of manufacturing photovoltaic element |
| JP2010056560A (ja) * | 2007-08-10 | 2010-03-11 | Mitsubishi Electric Corp | カーボン膜成膜装置 |
| JP2019145806A (ja) * | 2008-09-19 | 2019-08-29 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US10559599B2 (en) | 2008-09-19 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI714063B (zh) * | 2008-09-19 | 2020-12-21 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
| US11610918B2 (en) | 2008-09-19 | 2023-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2013033998A (ja) * | 2009-09-04 | 2013-02-14 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US8890166B2 (en) | 2009-09-04 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
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