JP2002176111A5 - - Google Patents

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Publication number
JP2002176111A5
JP2002176111A5 JP2000374261A JP2000374261A JP2002176111A5 JP 2002176111 A5 JP2002176111 A5 JP 2002176111A5 JP 2000374261 A JP2000374261 A JP 2000374261A JP 2000374261 A JP2000374261 A JP 2000374261A JP 2002176111 A5 JP2002176111 A5 JP 2002176111A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000374261A
Other versions
JP4530527B2 (ja
JP2002176111A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000374261A priority Critical patent/JP4530527B2/ja
Priority claimed from JP2000374261A external-priority patent/JP4530527B2/ja
Priority to US09/846,197 priority patent/US6373760B1/en
Priority to DE10135559A priority patent/DE10135559A1/de
Publication of JP2002176111A publication Critical patent/JP2002176111A/ja
Publication of JP2002176111A5 publication Critical patent/JP2002176111A5/ja
Application granted granted Critical
Publication of JP4530527B2 publication Critical patent/JP4530527B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000374261A 2000-12-08 2000-12-08 スタティック型半導体記憶装置 Expired - Lifetime JP4530527B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000374261A JP4530527B2 (ja) 2000-12-08 2000-12-08 スタティック型半導体記憶装置
US09/846,197 US6373760B1 (en) 2000-12-08 2001-05-02 Static type semiconductor memory device adopting a redundancy system
DE10135559A DE10135559A1 (de) 2000-12-08 2001-07-20 Statische Halbleiterspeichervorrichtung mit einem Redundanzsystem

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000374261A JP4530527B2 (ja) 2000-12-08 2000-12-08 スタティック型半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010095259A Division JP5143179B2 (ja) 2010-04-16 2010-04-16 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2002176111A JP2002176111A (ja) 2002-06-21
JP2002176111A5 true JP2002176111A5 (ja) 2007-11-29
JP4530527B2 JP4530527B2 (ja) 2010-08-25

Family

ID=18843484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000374261A Expired - Lifetime JP4530527B2 (ja) 2000-12-08 2000-12-08 スタティック型半導体記憶装置

Country Status (3)

Country Link
US (1) US6373760B1 (ja)
JP (1) JP4530527B2 (ja)
DE (1) DE10135559A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724649B1 (en) * 2002-12-19 2004-04-20 Intel Corporation Memory cell leakage reduction
JP4388274B2 (ja) 2002-12-24 2009-12-24 株式会社ルネサステクノロジ 半導体記憶装置
JP4537668B2 (ja) * 2003-05-23 2010-09-01 パナソニック株式会社 多ポートメモリセル
US7773442B2 (en) 2004-06-25 2010-08-10 Cypress Semiconductor Corporation Memory cell array latchup prevention
US9842629B2 (en) * 2004-06-25 2017-12-12 Cypress Semiconductor Corporation Memory cell array latchup prevention
US7365432B2 (en) * 2004-08-23 2008-04-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell structure
KR100660899B1 (ko) * 2005-12-15 2006-12-26 삼성전자주식회사 누설 전류 패스를 제거할 수 있는 퓨즈 회로
US7961499B2 (en) 2009-01-22 2011-06-14 Qualcomm Incorporated Low leakage high performance static random access memory cell using dual-technology transistors
JP6353668B2 (ja) 2014-03-03 2018-07-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP6506925B2 (ja) * 2014-07-30 2019-04-24 ローム株式会社 記憶回路
CN108242251B (zh) * 2016-12-23 2019-08-16 联华电子股份有限公司 动态随机存取存储器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155954A (ja) 1983-02-24 1984-09-05 Mitsubishi Electric Corp 半導体メモリ装置
JPS6432670A (en) 1988-06-15 1989-02-02 Hitachi Ltd Semiconductor memory circuit device
JPH0682807B2 (ja) * 1988-09-12 1994-10-19 株式会社東芝 半導体メモリ
JPH0652542B2 (ja) 1989-07-27 1994-07-06 株式会社田村電機製作所 カードリーダのシヤツタ機構
JP3354267B2 (ja) 1994-02-18 2002-12-09 株式会社東芝 半導体メモリ
JPH08274266A (ja) * 1995-03-29 1996-10-18 Hitachi Ltd ヒューズトリミング回路及びそれを備えた半導体集積回路
KR0157339B1 (ko) * 1995-06-28 1998-12-01 김광호 반도체 메모리의 불량셀 구제회로
JP3758251B2 (ja) * 1995-11-06 2006-03-22 セイコーエプソン株式会社 半導体記憶装置
JP3824343B2 (ja) 1996-03-29 2006-09-20 富士通株式会社 半導体装置
JPH1011993A (ja) 1996-06-27 1998-01-16 Mitsubishi Electric Corp 半導体記憶装置
JP2978467B2 (ja) * 1998-03-16 1999-11-15 株式会社日立製作所 半導体集積回路装置の製造方法
JP3401522B2 (ja) * 1998-07-06 2003-04-28 日本電気株式会社 ヒューズ回路及び冗長デコーダ回路

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