JP2002154899A5 - - Google Patents

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Publication number
JP2002154899A5
JP2002154899A5 JP2000343664A JP2000343664A JP2002154899A5 JP 2002154899 A5 JP2002154899 A5 JP 2002154899A5 JP 2000343664 A JP2000343664 A JP 2000343664A JP 2000343664 A JP2000343664 A JP 2000343664A JP 2002154899 A5 JP2002154899 A5 JP 2002154899A5
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JP
Japan
Prior art keywords
silicon carbide
crucible
single crystal
carbide single
introduction pipe
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Application number
JP2000343664A
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English (en)
Japanese (ja)
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JP3864696B2 (ja
JP2002154899A (ja
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Priority claimed from JP2000343664A external-priority patent/JP3864696B2/ja
Priority to JP2000343664A priority Critical patent/JP3864696B2/ja
Application filed filed Critical
Priority to US09/985,120 priority patent/US6830618B2/en
Priority to EP01126619A priority patent/EP1205583B1/en
Priority to DE60125689T priority patent/DE60125689T2/de
Publication of JP2002154899A publication Critical patent/JP2002154899A/ja
Priority to US10/872,365 priority patent/US7112242B2/en
Publication of JP2002154899A5 publication Critical patent/JP2002154899A5/ja
Publication of JP3864696B2 publication Critical patent/JP3864696B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000343664A 2000-11-10 2000-11-10 炭化珪素単結晶の製造方法及び製造装置 Expired - Lifetime JP3864696B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000343664A JP3864696B2 (ja) 2000-11-10 2000-11-10 炭化珪素単結晶の製造方法及び製造装置
US09/985,120 US6830618B2 (en) 2000-11-10 2001-11-01 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same
EP01126619A EP1205583B1 (en) 2000-11-10 2001-11-07 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same
DE60125689T DE60125689T2 (de) 2000-11-10 2001-11-07 Verfahren und Vorrichtung zur Herstellung von Siliziumkarbidkristallen unter Verwendung von Quellegasen
US10/872,365 US7112242B2 (en) 2000-11-10 2004-06-22 Manufacturing method for producing silicon carbide crystal using source gases

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000343664A JP3864696B2 (ja) 2000-11-10 2000-11-10 炭化珪素単結晶の製造方法及び製造装置

Publications (3)

Publication Number Publication Date
JP2002154899A JP2002154899A (ja) 2002-05-28
JP2002154899A5 true JP2002154899A5 (enExample) 2006-08-24
JP3864696B2 JP3864696B2 (ja) 2007-01-10

Family

ID=18817997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000343664A Expired - Lifetime JP3864696B2 (ja) 2000-11-10 2000-11-10 炭化珪素単結晶の製造方法及び製造装置

Country Status (4)

Country Link
US (2) US6830618B2 (enExample)
EP (1) EP1205583B1 (enExample)
JP (1) JP3864696B2 (enExample)
DE (1) DE60125689T2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1322801B1 (de) * 2000-09-22 2010-01-06 Aixtron Ag Cvd-verfahren und gaseinlassorgan zur durchführung des verfahrens
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
SE525574C2 (sv) 2002-08-30 2005-03-15 Okmetic Oyj Lågdopat kiselkarbidsubstrat och användning därav i högspänningskomponenter
DE10243022A1 (de) * 2002-09-17 2004-03-25 Degussa Ag Abscheidung eines Feststoffs durch thermische Zersetzung einer gasförmigen Substanz in einem Becherreaktor
US7217323B2 (en) * 2003-04-04 2007-05-15 Denso Corporation Equipment and method for manufacturing silicon carbide single crystal
ATE335872T1 (de) * 2003-04-24 2006-09-15 Norstel Ab Vorrichtung und verfahren zur herstellung von einkristallen durch dampfphasenabscheidung
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
EP1806437B1 (en) * 2004-09-03 2016-08-17 Nippon Steel & Sumitomo Metal Corporation Method for preparing silicon carbide single crystal
GB2423307A (en) * 2005-02-22 2006-08-23 Univ Durham Apparatus and process for crystal growth
CN101490315A (zh) * 2006-07-19 2009-07-22 陶氏康宁公司 生产具有改善的载流子寿命的基底的方法
WO2008014434A2 (en) * 2006-07-28 2008-01-31 Caracal, Inc. Crystal growth method and reactor design
US7351936B1 (en) * 2007-01-22 2008-04-01 Taiwan Semiconductor Manufacturing Company Method and apparatus for preventing baking chamber exhaust line clog
US8016945B2 (en) * 2007-12-21 2011-09-13 Applied Materials, Inc. Hafnium oxide ALD process
TW200930850A (en) * 2008-01-03 2009-07-16 Green Energy Technology Inc Cooling structure for body of crystal growth furnace
JP4591523B2 (ja) * 2008-03-05 2010-12-01 株式会社デンソー 炭化珪素単結晶の製造装置
DE102008064642A1 (de) * 2008-09-30 2010-04-01 Evonik Degussa Gmbh Zusammensetzung oder Kit für ein Verfahren zur Herstellung von hochreinem Siliciumcarbid aus Kohlenhydraten und Siliciumoxid sowie darauf basierende Artikel
US20120285370A1 (en) * 2009-09-15 2012-11-15 Ii-Vi Incorporated Sublimation growth of sic single crystals
JP4992965B2 (ja) * 2009-12-25 2012-08-08 株式会社デンソー 炭化珪素単結晶の製造装置
DE102011089501B4 (de) * 2011-12-21 2013-10-10 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zum Verdampfen von Material aus einer Metallschmelze
JP6269854B2 (ja) * 2014-10-31 2018-01-31 富士電機株式会社 炭化珪素エピタキシャル膜の成長方法
EP3026013A1 (de) 2014-11-28 2016-06-01 Evonik Degussa GmbH Nanokristalline metallverbindungspulver, verfahren zu deren herstellung als auch deren verwendung
EP3026012A1 (de) 2014-11-28 2016-06-01 Evonik Degussa GmbH Höchstreine, amorphe metallverbindungspulver, verfahren zu deren herstellung als auch deren verwendung
CN114108078B (zh) * 2021-11-30 2023-06-02 江苏集芯半导体硅材料研究院有限公司 坩埚组件和具有其的单晶生长装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05208900A (ja) 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
JP3281019B2 (ja) * 1992-01-30 2002-05-13 同和鉱業株式会社 亜鉛粒の製造方法および装置
DE4310744A1 (de) * 1993-04-01 1994-10-06 Siemens Ag Vorrichtung zum Herstellen von SiC-Einkristallen
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
US6030661A (en) 1995-08-04 2000-02-29 Abb Research Ltd. Device and a method for epitaxially growing objects by CVD
US5683507A (en) * 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
SE9503426D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A device for heat treatment of objects and a method for producing a susceptor
SE9503428D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
US6039812A (en) 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
JP3079256B2 (ja) 1997-07-18 2000-08-21 工業技術院長 結晶成長方法
US6056820A (en) * 1998-07-10 2000-05-02 Northrop Grumman Corporation Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide
DE19934336A1 (de) * 1998-09-03 2000-03-09 Siemens Ag Vorrichtung zum Herstellen und Bearbeiten von Halbleitersubstraten
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
RU2162117C2 (ru) 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
US6406539B1 (en) * 1999-04-28 2002-06-18 Showa Denko K.K, Process for producing silicon carbide single crystal and production apparatus therefor
US6451112B1 (en) * 1999-10-15 2002-09-17 Denso Corporation Method and apparatus for fabricating high quality single crystal

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