JP2002134756A5 - - Google Patents

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Publication number
JP2002134756A5
JP2002134756A5 JP2000326581A JP2000326581A JP2002134756A5 JP 2002134756 A5 JP2002134756 A5 JP 2002134756A5 JP 2000326581 A JP2000326581 A JP 2000326581A JP 2000326581 A JP2000326581 A JP 2000326581A JP 2002134756 A5 JP2002134756 A5 JP 2002134756A5
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JP
Japan
Prior art keywords
electrode
film transistor
thin film
gate
electrode layer
Prior art date
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Pending
Application number
JP2000326581A
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English (en)
Japanese (ja)
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JP2002134756A (ja
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Priority to JP2000326581A priority Critical patent/JP2002134756A/ja
Priority claimed from JP2000326581A external-priority patent/JP2002134756A/ja
Publication of JP2002134756A publication Critical patent/JP2002134756A/ja
Publication of JP2002134756A5 publication Critical patent/JP2002134756A5/ja
Pending legal-status Critical Current

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JP2000326581A 2000-10-26 2000-10-26 半導体装置およびその製造方法 Pending JP2002134756A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000326581A JP2002134756A (ja) 2000-10-26 2000-10-26 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000326581A JP2002134756A (ja) 2000-10-26 2000-10-26 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2002134756A JP2002134756A (ja) 2002-05-10
JP2002134756A5 true JP2002134756A5 (fr) 2005-09-08

Family

ID=18803742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000326581A Pending JP2002134756A (ja) 2000-10-26 2000-10-26 半導体装置およびその製造方法

Country Status (1)

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JP (1) JP2002134756A (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4954498B2 (ja) * 2004-06-01 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI366218B (en) 2004-06-01 2012-06-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR100752368B1 (ko) 2004-11-15 2007-08-27 삼성에스디아이 주식회사 평판표시소자 및 그 제조방법
KR101107252B1 (ko) 2004-12-31 2012-01-19 엘지디스플레이 주식회사 일렉트로-루미네센스 표시 패널의 박막 트랜지스터 기판및 그 제조 방법
JP4817946B2 (ja) * 2005-04-15 2011-11-16 株式会社半導体エネルギー研究所 表示装置の作製方法
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
JP5177962B2 (ja) * 2005-05-20 2013-04-10 株式会社半導体エネルギー研究所 半導体装置
JP5046565B2 (ja) * 2005-06-10 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5137342B2 (ja) * 2005-06-30 2013-02-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4708099B2 (ja) * 2005-07-04 2011-06-22 シャープ株式会社 トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法
JP5177971B2 (ja) * 2005-07-29 2013-04-10 株式会社半導体エネルギー研究所 半導体装置の作製方法、及び半導体装置
US7867791B2 (en) 2005-07-29 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities
KR101267499B1 (ko) * 2005-08-18 2013-05-31 삼성디스플레이 주식회사 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터
JP2007199708A (ja) * 2005-12-28 2007-08-09 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
US7821613B2 (en) 2005-12-28 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
KR100943953B1 (ko) * 2008-04-03 2010-02-26 삼성모바일디스플레이주식회사 표시 장치의 제조방법
KR100908236B1 (ko) * 2008-04-24 2009-07-20 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 그 제조방법
KR101117642B1 (ko) * 2009-11-16 2012-03-05 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101636998B1 (ko) 2010-02-12 2016-07-08 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
JP2012151417A (ja) * 2011-01-21 2012-08-09 Japan Display Central Co Ltd 薄膜トランジスタ回路基板及びその製造方法
CN104409518B (zh) * 2014-12-11 2018-11-09 昆山国显光电有限公司 薄膜晶体管及其制备方法
CN107533981B (zh) 2015-04-28 2020-12-15 夏普株式会社 半导体装置以及其制造方法
CN113725158B (zh) * 2021-08-31 2024-03-12 昆山龙腾光电股份有限公司 Tft阵列基板及其制作方法

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