JP2002134756A5 - - Google Patents
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- Publication number
- JP2002134756A5 JP2002134756A5 JP2000326581A JP2000326581A JP2002134756A5 JP 2002134756 A5 JP2002134756 A5 JP 2002134756A5 JP 2000326581 A JP2000326581 A JP 2000326581A JP 2000326581 A JP2000326581 A JP 2000326581A JP 2002134756 A5 JP2002134756 A5 JP 2002134756A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film transistor
- thin film
- gate
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims 16
- 239000010409 thin film Substances 0.000 claims 13
- 239000010410 layer Substances 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 5
- 239000003990 capacitor Substances 0.000 claims 3
- 239000004973 liquid crystal related substance Substances 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000326581A JP2002134756A (ja) | 2000-10-26 | 2000-10-26 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000326581A JP2002134756A (ja) | 2000-10-26 | 2000-10-26 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002134756A JP2002134756A (ja) | 2002-05-10 |
| JP2002134756A5 true JP2002134756A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2005-09-08 |
Family
ID=18803742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000326581A Pending JP2002134756A (ja) | 2000-10-26 | 2000-10-26 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002134756A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI366218B (en) | 2004-06-01 | 2012-06-11 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| JP4954498B2 (ja) * | 2004-06-01 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100752368B1 (ko) | 2004-11-15 | 2007-08-27 | 삼성에스디아이 주식회사 | 평판표시소자 및 그 제조방법 |
| KR101107252B1 (ko) | 2004-12-31 | 2012-01-19 | 엘지디스플레이 주식회사 | 일렉트로-루미네센스 표시 패널의 박막 트랜지스터 기판및 그 제조 방법 |
| US7888702B2 (en) | 2005-04-15 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the display device |
| JP4817946B2 (ja) * | 2005-04-15 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP5177962B2 (ja) * | 2005-05-20 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5046565B2 (ja) * | 2005-06-10 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5137342B2 (ja) * | 2005-06-30 | 2013-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4708099B2 (ja) * | 2005-07-04 | 2011-06-22 | シャープ株式会社 | トランジスタ製造用マスクおよびこれを用いてトランジスタを製造する方法 |
| JP5177971B2 (ja) * | 2005-07-29 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、及び半導体装置 |
| US7867791B2 (en) | 2005-07-29 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities |
| KR101267499B1 (ko) * | 2005-08-18 | 2013-05-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 |
| JP2007199708A (ja) * | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| US7821613B2 (en) | 2005-12-28 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| KR100943953B1 (ko) * | 2008-04-03 | 2010-02-26 | 삼성모바일디스플레이주식회사 | 표시 장치의 제조방법 |
| KR100908236B1 (ko) * | 2008-04-24 | 2009-07-20 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 그 제조방법 |
| KR101117642B1 (ko) * | 2009-11-16 | 2012-03-05 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| KR101636998B1 (ko) | 2010-02-12 | 2016-07-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
| JP2012151417A (ja) * | 2011-01-21 | 2012-08-09 | Japan Display Central Co Ltd | 薄膜トランジスタ回路基板及びその製造方法 |
| CN104409518B (zh) * | 2014-12-11 | 2018-11-09 | 昆山国显光电有限公司 | 薄膜晶体管及其制备方法 |
| WO2016175086A1 (ja) | 2015-04-28 | 2016-11-03 | シャープ株式会社 | 半導体装置及びその製造方法 |
| CN113725158B (zh) * | 2021-08-31 | 2024-03-12 | 昆山龙腾光电股份有限公司 | Tft阵列基板及其制作方法 |
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- 2000-10-26 JP JP2000326581A patent/JP2002134756A/ja active Pending