JP2002094029A5 - - Google Patents

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Publication number
JP2002094029A5
JP2002094029A5 JP2000279525A JP2000279525A JP2002094029A5 JP 2002094029 A5 JP2002094029 A5 JP 2002094029A5 JP 2000279525 A JP2000279525 A JP 2000279525A JP 2000279525 A JP2000279525 A JP 2000279525A JP 2002094029 A5 JP2002094029 A5 JP 2002094029A5
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JP
Japan
Prior art keywords
region
transistor
source
channel
drain
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JP2000279525A
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English (en)
Japanese (ja)
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JP2002094029A (ja
JP3749101B2 (ja
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Priority claimed from JP2000279525A external-priority patent/JP3749101B2/ja
Priority to JP2000279525A priority Critical patent/JP3749101B2/ja
Application filed filed Critical
Priority to TW090103047A priority patent/TW494575B/zh
Priority to KR1020010014064A priority patent/KR100724029B1/ko
Priority to US09/811,555 priority patent/US6646300B2/en
Publication of JP2002094029A publication Critical patent/JP2002094029A/ja
Priority to US10/338,001 priority patent/US6825525B2/en
Priority to US10/985,946 priority patent/US7009243B2/en
Publication of JP2002094029A5 publication Critical patent/JP2002094029A5/ja
Publication of JP3749101B2 publication Critical patent/JP3749101B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000279525A 2000-09-14 2000-09-14 半導体装置 Expired - Fee Related JP3749101B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000279525A JP3749101B2 (ja) 2000-09-14 2000-09-14 半導体装置
TW090103047A TW494575B (en) 2000-09-14 2001-02-12 Semiconductor device and transistor
KR1020010014064A KR100724029B1 (ko) 2000-09-14 2001-03-19 반도체 장치 및 트랜지스터
US09/811,555 US6646300B2 (en) 2000-09-14 2001-03-20 Semiconductor memory device
US10/338,001 US6825525B2 (en) 2000-09-14 2003-01-08 Semiconductor memory device
US10/985,946 US7009243B2 (en) 2000-09-14 2004-11-12 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000279525A JP3749101B2 (ja) 2000-09-14 2000-09-14 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004301411A Division JP2005094025A (ja) 2004-10-15 2004-10-15 半導体装置及びトランジスタ

Publications (3)

Publication Number Publication Date
JP2002094029A JP2002094029A (ja) 2002-03-29
JP2002094029A5 true JP2002094029A5 (OSRAM) 2005-02-03
JP3749101B2 JP3749101B2 (ja) 2006-02-22

Family

ID=18764520

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000279525A Expired - Fee Related JP3749101B2 (ja) 2000-09-14 2000-09-14 半導体装置

Country Status (4)

Country Link
US (3) US6646300B2 (OSRAM)
JP (1) JP3749101B2 (OSRAM)
KR (1) KR100724029B1 (OSRAM)
TW (1) TW494575B (OSRAM)

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CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR101939713B1 (ko) 2010-02-19 2019-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101932909B1 (ko) 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
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JP5898527B2 (ja) * 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
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JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2014142986A (ja) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
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JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
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JP7303006B2 (ja) * 2019-03-29 2023-07-04 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法
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WO2024031438A1 (zh) * 2022-08-10 2024-02-15 华为技术有限公司 一种三维存储阵列、存储器及电子设备

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