JP2002083805A5 - - Google Patents
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- Publication number
- JP2002083805A5 JP2002083805A5 JP2001141133A JP2001141133A JP2002083805A5 JP 2002083805 A5 JP2002083805 A5 JP 2002083805A5 JP 2001141133 A JP2001141133 A JP 2001141133A JP 2001141133 A JP2001141133 A JP 2001141133A JP 2002083805 A5 JP2002083805 A5 JP 2002083805A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- semiconductor device
- forming
- based gas
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 55
- 239000012535 impurity Substances 0.000 claims 19
- 238000004519 manufacturing process Methods 0.000 claims 18
- 238000000034 method Methods 0.000 claims 18
- 238000001312 dry etching Methods 0.000 claims 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 13
- 229910052731 fluorine Inorganic materials 0.000 claims 13
- 239000011737 fluorine Substances 0.000 claims 13
- 239000000460 chlorine Substances 0.000 claims 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 11
- 229910052801 chlorine Inorganic materials 0.000 claims 11
- 239000000463 material Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 239000003870 refractory metal Substances 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001141133A JP4011304B2 (ja) | 2000-05-12 | 2001-05-11 | 半導体装置およびその作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-140999 | 2000-05-12 | ||
| JP2000140999 | 2000-05-12 | ||
| JP2000-193614 | 2000-06-27 | ||
| JP2000193614 | 2000-06-27 | ||
| JP2001141133A JP4011304B2 (ja) | 2000-05-12 | 2001-05-11 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007118237A Division JP4801622B2 (ja) | 2000-05-12 | 2007-04-27 | 半導体装置およびその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002083805A JP2002083805A (ja) | 2002-03-22 |
| JP2002083805A5 true JP2002083805A5 (https=) | 2005-10-06 |
| JP4011304B2 JP4011304B2 (ja) | 2007-11-21 |
Family
ID=27343369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001141133A Expired - Lifetime JP4011304B2 (ja) | 2000-05-12 | 2001-05-11 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4011304B2 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100857133B1 (ko) * | 2002-06-28 | 2008-09-05 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판 및 그 제조방법 |
| JP4271413B2 (ja) | 2002-06-28 | 2009-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3646718B2 (ja) | 2002-10-04 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JP3904512B2 (ja) | 2002-12-24 | 2007-04-11 | シャープ株式会社 | 半導体装置およびその製造方法、並びに半導体装置を備えた電子機器 |
| JP4663963B2 (ja) * | 2003-02-17 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4818576B2 (ja) * | 2003-07-03 | 2011-11-16 | 三菱電機株式会社 | 薄膜トランジスタおよび薄膜トランジスタを備えた表示装置 |
| KR100543001B1 (ko) | 2003-09-03 | 2006-01-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 액티브 매트릭스 평판 표시 장치 |
| JP4455855B2 (ja) * | 2003-09-19 | 2010-04-21 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US7288480B2 (en) | 2004-04-23 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device |
| KR100560821B1 (ko) * | 2004-08-17 | 2006-03-13 | 삼성전자주식회사 | 반도체 소자의 캐패시터 형성 방법 |
| US8319295B2 (en) * | 2007-01-10 | 2012-11-27 | Imec | Use of F-based gate etch to passivate the high-k/metal gate stack for deep submicron transistor technologies |
| JP5503247B2 (ja) * | 2009-10-19 | 2014-05-28 | 株式会社ジャパンディスプレイ | 薄膜トランジスタの製造方法および液晶表示装置の製造方法 |
| TWI665778B (zh) * | 2014-02-05 | 2019-07-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置、模組及電子裝置 |
-
2001
- 2001-05-11 JP JP2001141133A patent/JP4011304B2/ja not_active Expired - Lifetime
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