JP2002041052A - 音響素子の音響反射材 - Google Patents
音響素子の音響反射材Info
- Publication number
- JP2002041052A JP2002041052A JP2001154665A JP2001154665A JP2002041052A JP 2002041052 A JP2002041052 A JP 2002041052A JP 2001154665 A JP2001154665 A JP 2001154665A JP 2001154665 A JP2001154665 A JP 2001154665A JP 2002041052 A JP2002041052 A JP 2002041052A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- acoustic
- impedance
- acoustic element
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 99
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 8
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910026551 ZrC Inorganic materials 0.000 claims description 4
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims description 4
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 4
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 4
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 4
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims description 3
- 229910003449 rhenium oxide Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- -1 tungsten nitride Chemical class 0.000 claims 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 239000004964 aerogel Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 29
- 239000010408 film Substances 0.000 description 14
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 235000003205 Smilax rotundifolia Nutrition 0.000 description 1
- 240000009022 Smilax rotundifolia Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/175—Acoustic mirrors
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/576807 | 2000-05-23 | ||
| US09/576,807 US6603241B1 (en) | 2000-05-23 | 2000-05-23 | Acoustic mirror materials for acoustic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002041052A true JP2002041052A (ja) | 2002-02-08 |
| JP2002041052A5 JP2002041052A5 (enExample) | 2008-07-10 |
Family
ID=24306076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001154665A Pending JP2002041052A (ja) | 2000-05-23 | 2001-05-23 | 音響素子の音響反射材 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6603241B1 (enExample) |
| EP (1) | EP1158671B1 (enExample) |
| JP (1) | JP2002041052A (enExample) |
| DE (1) | DE60139226D1 (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012086441A1 (ja) * | 2010-12-24 | 2012-06-28 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
| US9079127B2 (en) | 2010-06-04 | 2015-07-14 | Empire Technology Development Llc | Acoustically driven nanoparticle concentrator |
| WO2016136327A1 (ja) * | 2015-02-27 | 2016-09-01 | 株式会社日立製作所 | 超音波振動子ユニット |
| US9764304B2 (en) | 2012-05-14 | 2017-09-19 | Empire Technology Development Llc | Acoustically driven nanoparticle concentrator |
| JPWO2023189103A1 (enExample) * | 2022-03-28 | 2023-10-05 | ||
| WO2025258231A1 (ja) * | 2024-06-13 | 2025-12-18 | 株式会社村田製作所 | 弾性波装置 |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040019373A (ko) * | 2001-07-30 | 2004-03-05 | 인피네온 테크놀로지스 아게 | 공진기 장치 |
| DE60140319D1 (de) * | 2001-11-06 | 2009-12-10 | Avago Technologies Wireless Ip | Filtereinrichtung und verfahren zur herstellung einer filtereinrichtung |
| DE10160617A1 (de) * | 2001-12-11 | 2003-06-12 | Epcos Ag | Akustischer Spiegel mit verbesserter Reflexion |
| FR2848036B1 (fr) | 2002-11-28 | 2005-08-26 | St Microelectronics Sa | Support pour resonateur acoustique, resonateur acoustique et circuit integre correspondant |
| JP2005136534A (ja) * | 2003-10-29 | 2005-05-26 | Tdk Corp | 薄膜バルク波共振器 |
| EP1575165B1 (en) * | 2004-03-09 | 2008-05-07 | Infineon Technologies AG | Bulk acoustic wave filter and method for eliminating unwanted side passands |
| KR100632480B1 (ko) * | 2004-11-18 | 2006-10-16 | 황경환 | 콘덴서 스피커 |
| EP1829209A1 (en) * | 2004-12-15 | 2007-09-05 | Philips Intellectual Property & Standards GmbH | Thin film acoustic reflector stack |
| US20060220763A1 (en) * | 2005-03-31 | 2006-10-05 | Tomohiro Iwasaki | Acoustic mirror type thin film bulk acoustic resonator, and filter, duplexer and communication apparatus comprising the same |
| CN100563101C (zh) * | 2005-06-30 | 2009-11-25 | 松下电器产业株式会社 | 声共振器及滤波器 |
| WO2007004435A1 (ja) * | 2005-06-30 | 2007-01-11 | Matsushita Electric Industrial Co., Ltd. | 音響共振器及びフィルタ |
| FR2890490A1 (fr) | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
| US8270251B2 (en) | 2005-12-05 | 2012-09-18 | Xact Downhole Telemetry Inc. | Acoustic isolator |
| KR100857935B1 (ko) | 2006-02-24 | 2008-09-09 | 인피니언 테크놀로지스 아게 | 음향 미러의 제조 방법 및 압전 공명기의 제조 방법 |
| US7414350B1 (en) * | 2006-03-03 | 2008-08-19 | Skyworks Solutions, Inc. | Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same |
| JP4207083B2 (ja) * | 2006-04-04 | 2009-01-14 | セイコーエプソン株式会社 | 光学多層膜フィルタ、光学多層膜フィルタの製造方法および電子機器装置 |
| US7385334B1 (en) | 2006-11-20 | 2008-06-10 | Sandia Corporation | Contour mode resonators with acoustic reflectors |
| WO2009008973A2 (en) * | 2007-07-11 | 2009-01-15 | Skyworks Solutions, Inc. | Method for forming an acoustic mirror with reduced metal layer roughness and related structure |
| US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
| US10658998B2 (en) | 2013-07-31 | 2020-05-19 | Oepic Semiconductors, Inc. | Piezoelectric film transfer for acoustic resonators and filters |
| US9537465B1 (en) * | 2014-06-06 | 2017-01-03 | Akoustis, Inc. | Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate |
| FR3047355B1 (fr) | 2016-02-01 | 2019-04-19 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
| CN107016988B (zh) * | 2017-03-03 | 2021-02-05 | 中南大学 | 一种轻质反声材料及其制备方法 |
| DE102018117520B3 (de) * | 2018-07-19 | 2019-12-05 | RF360 Europe GmbH | HF-Filtereinrichtung |
| EP4300823A1 (en) * | 2022-06-29 | 2024-01-03 | Silicon Austria Labs GmbH | A layer for an acoustic device and a method for depositing the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02141194U (enExample) * | 1989-04-27 | 1990-11-27 | ||
| JPH06295181A (ja) * | 1993-02-01 | 1994-10-21 | Motorola Inc | 周波数選択構成要素 |
| JPH10270979A (ja) * | 1997-03-13 | 1998-10-09 | Nokia Mobile Phones Ltd | 保護音響ミラーを含む頂部を有するバルク型音波（ｂａｗ）フィルタ |
| JPH11509469A (ja) * | 1995-07-24 | 1999-08-24 | シーメンス アクチエンゲゼルシヤフト | 超音波変換器 |
| JPH11284480A (ja) * | 1998-03-27 | 1999-10-15 | Mitsubishi Electric Corp | 圧電薄膜振動子 |
| JP2000030595A (ja) * | 1998-06-02 | 2000-01-28 | Nokia Mobile Phones Ltd | 共振器の構造 |
| JP2001089236A (ja) * | 1999-07-07 | 2001-04-03 | Koninkl Philips Electronics Nv | バルク音響波フィルタ |
Family Cites Families (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1592010A (en) * | 1977-01-12 | 1981-07-01 | Suwa Seikosha Kk | Contour vibrator |
| DE3005708C2 (de) * | 1980-02-15 | 1984-08-30 | Siemens AG, 1000 Berlin und 8000 München | Wandlerplatte für piezoelektrische Wandler |
| US4556812A (en) | 1983-10-13 | 1985-12-03 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate |
| US4502932A (en) | 1983-10-13 | 1985-03-05 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator and method of making same |
| JPS6086999A (ja) * | 1983-10-19 | 1985-05-16 | Hitachi Ltd | 超音波探触子の製造方法 |
| US4719383A (en) | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
| JPH0618314B2 (ja) | 1987-10-09 | 1994-03-09 | 株式会社村田製作所 | 集積型共振子の製造方法 |
| US4988957A (en) | 1989-05-26 | 1991-01-29 | Iowa State University Research Foundation, Inc. | Electronically-tuned thin-film resonator/filter controlled oscillator |
| US5075641A (en) | 1990-12-04 | 1991-12-24 | Iowa State University Research Foundation, Inc. | High frequency oscillator comprising cointegrated thin film resonator and active device |
| US5231327A (en) | 1990-12-14 | 1993-07-27 | Tfr Technologies, Inc. | Optimized piezoelectric resonator-based networks |
| DE69206165T2 (de) | 1991-02-04 | 1996-06-05 | Motorola Inc | Hermetische Verpackung für frequenzselektive Mikroelektronikteile. |
| US5263259A (en) | 1991-05-14 | 1993-11-23 | Fausto Cimador | Design apparatus |
| EP0546696A1 (en) | 1991-12-13 | 1993-06-16 | Hewlett-Packard Company | Process for lithography on piezoelectric films |
| US5232571A (en) | 1991-12-23 | 1993-08-03 | Iowa State University Research Foundation, Inc. | Aluminum nitride deposition using an AlN/Al sputter cycle technique |
| US5348617A (en) | 1991-12-23 | 1994-09-20 | Iowa State University Research Foundation, Inc. | Selective etching process |
| US5294898A (en) | 1992-01-29 | 1994-03-15 | Motorola, Inc. | Wide bandwidth bandpass filter comprising parallel connected piezoelectric resonators |
| US5166646A (en) | 1992-02-07 | 1992-11-24 | Motorola, Inc. | Integrated tunable resonators for use in oscillators and filters |
| US5283458A (en) | 1992-03-30 | 1994-02-01 | Trw Inc. | Temperature stable semiconductor bulk acoustic resonator |
| US5367308A (en) | 1992-05-29 | 1994-11-22 | Iowa State University Research Foundation, Inc. | Thin film resonating device |
| US5334960A (en) | 1993-02-16 | 1994-08-02 | Motorola, Inc. | Conjugately matched acoustic wave transducers and method |
| US5434827A (en) | 1993-06-15 | 1995-07-18 | Hewlett-Packard Company | Matching layer for front acoustic impedance matching of clinical ultrasonic tranducers |
| US5381385A (en) | 1993-08-04 | 1995-01-10 | Hewlett-Packard Company | Electrical interconnect for multilayer transducer elements of a two-dimensional transducer array |
| US5446306A (en) | 1993-12-13 | 1995-08-29 | Trw Inc. | Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) |
| US5587620A (en) | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
| US5552655A (en) | 1994-05-04 | 1996-09-03 | Trw Inc. | Low frequency mechanical resonator |
| US5864261A (en) | 1994-05-23 | 1999-01-26 | Iowa State University Research Foundation | Multiple layer acoustical structures for thin-film resonator based circuits and systems |
| JPH08148968A (ja) | 1994-11-24 | 1996-06-07 | Mitsubishi Electric Corp | 薄膜圧電素子 |
| US5630949A (en) | 1995-06-01 | 1997-05-20 | Tfr Technologies, Inc. | Method and apparatus for fabricating a piezoelectric resonator to a resonant frequency |
| US5596239A (en) | 1995-06-29 | 1997-01-21 | Motorola, Inc. | Enhanced quality factor resonator |
| US5617065A (en) | 1995-06-29 | 1997-04-01 | Motorola, Inc. | Filter using enhanced quality factor resonator and method |
| US5692279A (en) | 1995-08-17 | 1997-12-02 | Motorola | Method of making a monolithic thin film resonator lattice filter |
| US5698928A (en) | 1995-08-17 | 1997-12-16 | Motorola, Inc. | Thin film piezoelectric arrays with enhanced coupling and fabrication methods |
| US5702775A (en) | 1995-12-26 | 1997-12-30 | Motorola, Inc. | Microelectronic device package and method |
| US5821833A (en) | 1995-12-26 | 1998-10-13 | Tfr Technologies, Inc. | Stacked crystal filter device and method of making |
| US5646583A (en) * | 1996-01-04 | 1997-07-08 | Rockwell International Corporation | Acoustic isolator having a high impedance layer of hafnium oxide |
| US5760663A (en) | 1996-08-23 | 1998-06-02 | Motorola, Inc. | Elliptic baw resonator filter and method of making the same |
| US5714917A (en) | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
| US6051907A (en) | 1996-10-10 | 2000-04-18 | Nokia Mobile Phones Limited | Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS) |
| US5873154A (en) * | 1996-10-17 | 1999-02-23 | Nokia Mobile Phones Limited | Method for fabricating a resonator having an acoustic mirror |
| US5780713A (en) | 1996-11-19 | 1998-07-14 | Hewlett-Packard Company | Post-fabrication tuning of acoustic resonators |
| US5963856A (en) | 1997-01-03 | 1999-10-05 | Lucent Technologies Inc | Wireless receiver including tunable RF bandpass filter |
| US6087198A (en) | 1998-02-12 | 2000-07-11 | Texas Instruments Incorporated | Low cost packaging for thin-film resonators and thin-film resonator-based filters |
| US5853601A (en) | 1997-04-03 | 1998-12-29 | Northrop Grumman Corporation | Top-via etch technique for forming dielectric membranes |
| US6127768A (en) | 1997-05-09 | 2000-10-03 | Kobe Steel Usa, Inc. | Surface acoustic wave and bulk acoustic wave devices using a Zn.sub.(1-X) Yx O piezoelectric layer device |
| US5910756A (en) | 1997-05-21 | 1999-06-08 | Nokia Mobile Phones Limited | Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators |
| US5894647A (en) | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
| US5883575A (en) | 1997-08-12 | 1999-03-16 | Hewlett-Packard Company | RF-tags utilizing thin film bulk wave acoustic resonators |
| US6081171A (en) | 1998-04-08 | 2000-06-27 | Nokia Mobile Phones Limited | Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response |
| US6060818A (en) | 1998-06-02 | 2000-05-09 | Hewlett-Packard Company | SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters |
| US6150703A (en) | 1998-06-29 | 2000-11-21 | Trw Inc. | Lateral mode suppression in semiconductor bulk acoustic resonator (SBAR) devices using tapered electrodes, and electrodes edge damping materials |
| US5942958A (en) | 1998-07-27 | 1999-08-24 | Tfr Technologies, Inc. | Symmetrical piezoelectric resonator filter |
| US6185589B1 (en) | 1998-07-31 | 2001-02-06 | Hewlett-Packard Company | Automatic banner resizing for variable-width web pages using variable width cells of HTML table |
| US6215375B1 (en) | 1999-03-30 | 2001-04-10 | Agilent Technologies, Inc. | Bulk acoustic wave resonator with improved lateral mode suppression |
| JP4327942B2 (ja) | 1999-05-20 | 2009-09-09 | Ｔｄｋ株式会社 | 薄膜圧電素子 |
-
2000
- 2000-05-23 US US09/576,807 patent/US6603241B1/en not_active Expired - Lifetime
-
2001
- 2001-05-22 EP EP01610050A patent/EP1158671B1/en not_active Expired - Lifetime
- 2001-05-22 DE DE60139226T patent/DE60139226D1/de not_active Expired - Lifetime
- 2001-05-23 JP JP2001154665A patent/JP2002041052A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02141194U (enExample) * | 1989-04-27 | 1990-11-27 | ||
| JPH06295181A (ja) * | 1993-02-01 | 1994-10-21 | Motorola Inc | 周波数選択構成要素 |
| JPH11509469A (ja) * | 1995-07-24 | 1999-08-24 | シーメンス アクチエンゲゼルシヤフト | 超音波変換器 |
| JPH10270979A (ja) * | 1997-03-13 | 1998-10-09 | Nokia Mobile Phones Ltd | 保護音響ミラーを含む頂部を有するバルク型音波（ｂａｗ）フィルタ |
| JPH11284480A (ja) * | 1998-03-27 | 1999-10-15 | Mitsubishi Electric Corp | 圧電薄膜振動子 |
| JP2000030595A (ja) * | 1998-06-02 | 2000-01-28 | Nokia Mobile Phones Ltd | 共振器の構造 |
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| WO2012086441A1 (ja) * | 2010-12-24 | 2012-06-28 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
| CN103283147A (zh) * | 2010-12-24 | 2013-09-04 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
| JPWO2012086441A1 (ja) * | 2010-12-24 | 2014-05-22 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
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| US9764304B2 (en) | 2012-05-14 | 2017-09-19 | Empire Technology Development Llc | Acoustically driven nanoparticle concentrator |
| JP2016163132A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社日立製作所 | 超音波振動子ユニット |
| WO2016136327A1 (ja) * | 2015-02-27 | 2016-09-01 | 株式会社日立製作所 | 超音波振動子ユニット |
| US10672972B2 (en) | 2015-02-27 | 2020-06-02 | Hitachi, Ltd. | Ultrasonic transducer unit |
| JPWO2023189103A1 (enExample) * | 2022-03-28 | 2023-10-05 | ||
| WO2023189103A1 (ja) * | 2022-03-28 | 2023-10-05 | 日本碍子株式会社 | 複合基板、弾性表面波素子および複合基板の製造方法 |
| JP7724364B2 (ja) | 2022-03-28 | 2025-08-15 | 日本碍子株式会社 | 複合基板、弾性表面波素子および複合基板の製造方法 |
| WO2025258231A1 (ja) * | 2024-06-13 | 2025-12-18 | 株式会社村田製作所 | 弾性波装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1158671A3 (en) | 2002-01-30 |
| EP1158671A2 (en) | 2001-11-28 |
| EP1158671B1 (en) | 2009-07-15 |
| US6603241B1 (en) | 2003-08-05 |
| DE60139226D1 (de) | 2009-08-27 |
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