JP2002041052A5 - - Google Patents
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- JP2002041052A5 JP2002041052A5 JP2001154665A JP2001154665A JP2002041052A5 JP 2002041052 A5 JP2002041052 A5 JP 2002041052A5 JP 2001154665 A JP2001154665 A JP 2001154665A JP 2001154665 A JP2001154665 A JP 2001154665A JP 2002041052 A5 JP2002041052 A5 JP 2002041052A5
- Authority
- JP
- Japan
- Prior art keywords
- acoustic impedance
- layer
- acoustic
- impedance
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- INZDTEICWPZYJM-UHFFFAOYSA-N 1-(chloromethyl)-4-[4-(chloromethyl)phenyl]benzene Chemical compound C1=CC(CCl)=CC=C1C1=CC=C(CCl)C=C1 INZDTEICWPZYJM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910026551 ZrC Inorganic materials 0.000 description 2
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- YSZJKUDBYALHQE-UHFFFAOYSA-N rhenium trioxide Chemical compound O=[Re](=O)=O YSZJKUDBYALHQE-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/576807 | 2000-05-23 | ||
| US09/576,807 US6603241B1 (en) | 2000-05-23 | 2000-05-23 | Acoustic mirror materials for acoustic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002041052A JP2002041052A (ja) | 2002-02-08 |
| JP2002041052A5 true JP2002041052A5 (enExample) | 2008-07-10 |
Family
ID=24306076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001154665A Pending JP2002041052A (ja) | 2000-05-23 | 2001-05-23 | 音響素子の音響反射材 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6603241B1 (enExample) |
| EP (1) | EP1158671B1 (enExample) |
| JP (1) | JP2002041052A (enExample) |
| DE (1) | DE60139226D1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040019373A (ko) * | 2001-07-30 | 2004-03-05 | 인피네온 테크놀로지스 아게 | 공진기 장치 |
| DE60140319D1 (de) * | 2001-11-06 | 2009-12-10 | Avago Technologies Wireless Ip | Filtereinrichtung und verfahren zur herstellung einer filtereinrichtung |
| DE10160617A1 (de) * | 2001-12-11 | 2003-06-12 | Epcos Ag | Akustischer Spiegel mit verbesserter Reflexion |
| FR2848036B1 (fr) | 2002-11-28 | 2005-08-26 | St Microelectronics Sa | Support pour resonateur acoustique, resonateur acoustique et circuit integre correspondant |
| JP2005136534A (ja) * | 2003-10-29 | 2005-05-26 | Tdk Corp | 薄膜バルク波共振器 |
| EP1575165B1 (en) * | 2004-03-09 | 2008-05-07 | Infineon Technologies AG | Bulk acoustic wave filter and method for eliminating unwanted side passands |
| KR100632480B1 (ko) * | 2004-11-18 | 2006-10-16 | 황경환 | 콘덴서 스피커 |
| EP1829209A1 (en) * | 2004-12-15 | 2007-09-05 | Philips Intellectual Property & Standards GmbH | Thin film acoustic reflector stack |
| US20060220763A1 (en) * | 2005-03-31 | 2006-10-05 | Tomohiro Iwasaki | Acoustic mirror type thin film bulk acoustic resonator, and filter, duplexer and communication apparatus comprising the same |
| CN100563101C (zh) * | 2005-06-30 | 2009-11-25 | 松下电器产业株式会社 | 声共振器及滤波器 |
| WO2007004435A1 (ja) * | 2005-06-30 | 2007-01-11 | Matsushita Electric Industrial Co., Ltd. | 音響共振器及びフィルタ |
| FR2890490A1 (fr) | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
| US8270251B2 (en) | 2005-12-05 | 2012-09-18 | Xact Downhole Telemetry Inc. | Acoustic isolator |
| KR100857935B1 (ko) | 2006-02-24 | 2008-09-09 | 인피니언 테크놀로지스 아게 | 음향 미러의 제조 방법 및 압전 공명기의 제조 방법 |
| US7414350B1 (en) * | 2006-03-03 | 2008-08-19 | Skyworks Solutions, Inc. | Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same |
| JP4207083B2 (ja) * | 2006-04-04 | 2009-01-14 | セイコーエプソン株式会社 | 光学多層膜フィルタ、光学多層膜フィルタの製造方法および電子機器装置 |
| US7385334B1 (en) | 2006-11-20 | 2008-06-10 | Sandia Corporation | Contour mode resonators with acoustic reflectors |
| WO2009008973A2 (en) * | 2007-07-11 | 2009-01-15 | Skyworks Solutions, Inc. | Method for forming an acoustic mirror with reduced metal layer roughness and related structure |
| US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
| US9079127B2 (en) | 2010-06-04 | 2015-07-14 | Empire Technology Development Llc | Acoustically driven nanoparticle concentrator |
| WO2012086441A1 (ja) * | 2010-12-24 | 2012-06-28 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
| US9764304B2 (en) | 2012-05-14 | 2017-09-19 | Empire Technology Development Llc | Acoustically driven nanoparticle concentrator |
| US10658998B2 (en) | 2013-07-31 | 2020-05-19 | Oepic Semiconductors, Inc. | Piezoelectric film transfer for acoustic resonators and filters |
| US9537465B1 (en) * | 2014-06-06 | 2017-01-03 | Akoustis, Inc. | Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate |
| JP5997796B2 (ja) * | 2015-02-27 | 2016-09-28 | 株式会社日立製作所 | 超音波振動子ユニット |
| FR3047355B1 (fr) | 2016-02-01 | 2019-04-19 | Soitec | Structure hybride pour dispositif a ondes acoustiques de surface |
| CN107016988B (zh) * | 2017-03-03 | 2021-02-05 | 中南大学 | 一种轻质反声材料及其制备方法 |
| DE102018117520B3 (de) * | 2018-07-19 | 2019-12-05 | RF360 Europe GmbH | HF-Filtereinrichtung |
| CN118891824A (zh) * | 2022-03-28 | 2024-11-01 | 日本碍子株式会社 | 复合基板、弹性表面波元件以及复合基板的制造方法 |
| EP4300823A1 (en) * | 2022-06-29 | 2024-01-03 | Silicon Austria Labs GmbH | A layer for an acoustic device and a method for depositing the same |
| WO2025258231A1 (ja) * | 2024-06-13 | 2025-12-18 | 株式会社村田製作所 | 弾性波装置 |
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| GB1592010A (en) * | 1977-01-12 | 1981-07-01 | Suwa Seikosha Kk | Contour vibrator |
| DE3005708C2 (de) * | 1980-02-15 | 1984-08-30 | Siemens AG, 1000 Berlin und 8000 München | Wandlerplatte für piezoelektrische Wandler |
| US4556812A (en) | 1983-10-13 | 1985-12-03 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator with Al electrodes on an AlN layer and using a GaAs substrate |
| US4502932A (en) | 1983-10-13 | 1985-03-05 | The United States Of America As Represented By The United States Department Of Energy | Acoustic resonator and method of making same |
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| US4719383A (en) | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
| JPH0618314B2 (ja) | 1987-10-09 | 1994-03-09 | 株式会社村田製作所 | 集積型共振子の製造方法 |
| JPH02141194U (enExample) * | 1989-04-27 | 1990-11-27 | ||
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-
2000
- 2000-05-23 US US09/576,807 patent/US6603241B1/en not_active Expired - Lifetime
-
2001
- 2001-05-22 EP EP01610050A patent/EP1158671B1/en not_active Expired - Lifetime
- 2001-05-22 DE DE60139226T patent/DE60139226D1/de not_active Expired - Lifetime
- 2001-05-23 JP JP2001154665A patent/JP2002041052A/ja active Pending
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