CN1862959B - 压电薄膜谐振器与滤波器 - Google Patents
压电薄膜谐振器与滤波器 Download PDFInfo
- Publication number
- CN1862959B CN1862959B CN2006100801804A CN200610080180A CN1862959B CN 1862959 B CN1862959 B CN 1862959B CN 2006100801804 A CN2006100801804 A CN 2006100801804A CN 200610080180 A CN200610080180 A CN 200610080180A CN 1862959 B CN1862959 B CN 1862959B
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- China
- Prior art keywords
- bottom electrode
- piezoelectric
- thin film
- top electrode
- piezoelectric thin
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 80
- 239000010408 film Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 23
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 description 46
- 238000010168 coupling process Methods 0.000 description 46
- 238000005859 coupling reaction Methods 0.000 description 46
- 239000000463 material Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000007687 exposure technique Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005137877 | 2005-05-10 | ||
JP2005-137877 | 2005-05-10 | ||
JP2005137877A JP4629492B2 (ja) | 2005-05-10 | 2005-05-10 | 圧電薄膜共振子およびフィルタ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1862959A CN1862959A (zh) | 2006-11-15 |
CN1862959B true CN1862959B (zh) | 2011-12-07 |
Family
ID=37311280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100801804A Active CN1862959B (zh) | 2005-05-10 | 2006-05-10 | 压电薄膜谐振器与滤波器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7579761B2 (zh) |
JP (1) | JP4629492B2 (zh) |
KR (1) | KR100771345B1 (zh) |
CN (1) | CN1862959B (zh) |
DE (1) | DE102006020992A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005073175A (ja) * | 2003-08-27 | 2005-03-17 | Fujitsu Media Device Kk | 圧電薄膜共振子及びその製造方法 |
US7737612B1 (en) | 2005-05-25 | 2010-06-15 | Maxim Integrated Products, Inc. | BAW resonator bi-layer top electrode with zero etch undercut |
US7612488B1 (en) | 2007-01-16 | 2009-11-03 | Maxim Integrated Products, Inc. | Method to control BAW resonator top electrode edge during patterning |
JP4917481B2 (ja) * | 2007-06-13 | 2012-04-18 | 太陽誘電株式会社 | フィルタ |
JPWO2009066380A1 (ja) * | 2007-11-21 | 2011-03-31 | 太陽誘電株式会社 | フィルタ、それを用いたデュプレクサおよびそのデュプレクサを用いた通信機 |
JP5220503B2 (ja) * | 2008-07-23 | 2013-06-26 | 太陽誘電株式会社 | 弾性波デバイス |
JP5322597B2 (ja) * | 2008-11-13 | 2013-10-23 | 太陽誘電株式会社 | 共振子、フィルタ、デュープレクサおよび電子装置 |
JP5709368B2 (ja) * | 2009-11-04 | 2015-04-30 | キヤノン株式会社 | 生体情報取得装置 |
JP5296113B2 (ja) * | 2010-02-25 | 2013-09-25 | 日本電波工業株式会社 | 圧電振動片の製造方法、圧電振動片及び圧電デバイス |
US8438924B2 (en) * | 2011-02-03 | 2013-05-14 | Inficon, Inc. | Method of determining multilayer thin film deposition on a piezoelectric crystal |
CN102545827B (zh) * | 2012-01-04 | 2015-09-09 | 华为技术有限公司 | 薄膜体声波谐振器、通信器件和射频模块 |
US9548438B2 (en) * | 2014-03-31 | 2017-01-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising acoustic redistribution layers |
US9853626B2 (en) | 2014-03-31 | 2017-12-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising acoustic redistribution layers and lateral features |
US9862592B2 (en) * | 2015-03-13 | 2018-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | MEMS transducer and method for manufacturing the same |
US10483943B2 (en) | 2017-06-27 | 2019-11-19 | Globalfoundries Inc. | Artificially oriented piezoelectric film for integrated filters |
CN111279613A (zh) * | 2017-08-03 | 2020-06-12 | 阿库斯蒂斯有限公司 | 用于体声波谐振器的椭圆结构 |
WO2022123816A1 (ja) | 2020-12-11 | 2022-06-16 | 株式会社村田製作所 | 圧電振動子、圧電発振器、及び圧電振動子製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0486182A1 (en) * | 1990-11-15 | 1992-05-20 | Tosoh Corporation | Zinc oxide sintered body, and production and application thereof |
US5235240A (en) * | 1990-05-25 | 1993-08-10 | Toyo Communication Equipment Co., Ltd. | Electrodes and their lead structures of an ultrathin piezoelectric resonator |
US6414569B1 (en) * | 1999-11-01 | 2002-07-02 | Murata Manufacturing Co., Ltd. | Method of adjusting frequency of piezoelectric resonance element by removing material from a thicker electrode or adding, material to a thinner electrode |
CN1144300C (zh) * | 1997-12-16 | 2004-03-31 | 株式会社村田制作所 | 压电谐振器 |
CN1160852C (zh) * | 1998-10-26 | 2004-08-04 | 株式会社村田制作所 | 能陷型压电谐振器和能陷型压电谐振器元件 |
Family Cites Families (19)
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JPS5938764B2 (ja) * | 1977-02-09 | 1984-09-19 | 株式会社精工舎 | 厚みすべり水晶振動子 |
US5268610A (en) * | 1991-12-30 | 1993-12-07 | Xerox Corporation | Acoustic ink printer |
JPH10264385A (ja) * | 1997-03-27 | 1998-10-06 | Seiko Epson Corp | 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法 |
DE69836011T2 (de) | 1998-01-16 | 2007-05-24 | Mitsubishi Denki K.K. | Piezoelektrische dünnschichtanordnung |
US6291931B1 (en) | 1999-11-23 | 2001-09-18 | Tfr Technologies, Inc. | Piezoelectric resonator with layered electrodes |
JP2001211052A (ja) | 2000-01-26 | 2001-08-03 | Murata Mfg Co Ltd | 圧電共振子 |
JP3954395B2 (ja) * | 2001-10-26 | 2007-08-08 | 富士通株式会社 | 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法 |
JP2003179452A (ja) * | 2001-12-10 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 圧電振動子の製造方法 |
JP3846406B2 (ja) * | 2002-01-10 | 2006-11-15 | 株式会社村田製作所 | 電子部品、その製造方法、それを用いたフィルタおよびデュプレクサならびに電子通信機器 |
JP4128836B2 (ja) | 2002-09-27 | 2008-07-30 | Tdk株式会社 | 薄膜圧電共振子、それを用いたフィルタ及びデュプレクサ |
CN100521527C (zh) * | 2002-12-13 | 2009-07-29 | Nxp股份有限公司 | 电声谐振器 |
FR2853473B1 (fr) * | 2003-04-01 | 2005-07-01 | St Microelectronics Sa | Composant electronique comprenant un resonateur et procede de fabrication |
KR100489828B1 (ko) * | 2003-04-07 | 2005-05-16 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
JP2005073175A (ja) * | 2003-08-27 | 2005-03-17 | Fujitsu Media Device Kk | 圧電薄膜共振子及びその製造方法 |
KR20050034226A (ko) * | 2003-10-08 | 2005-04-14 | 황갑순 | 한 파장의 음파를 이용하는 fbar. |
JP4024741B2 (ja) * | 2003-10-20 | 2007-12-19 | 富士通メディアデバイス株式会社 | 圧電薄膜共振子及びフィルタ |
JP4373949B2 (ja) * | 2004-04-20 | 2009-11-25 | 株式会社東芝 | 薄膜圧電共振器及びその製造方法 |
JP4550658B2 (ja) * | 2005-04-28 | 2010-09-22 | 富士通メディアデバイス株式会社 | 圧電薄膜共振器およびフィルタ |
JP4756461B2 (ja) * | 2005-10-12 | 2011-08-24 | 宇部興産株式会社 | 窒化アルミニウム薄膜およびそれを用いた圧電薄膜共振子 |
-
2005
- 2005-05-10 JP JP2005137877A patent/JP4629492B2/ja active Active
-
2006
- 2006-05-04 DE DE200610020992 patent/DE102006020992A1/de not_active Ceased
- 2006-05-08 KR KR20060041026A patent/KR100771345B1/ko active IP Right Grant
- 2006-05-09 US US11/430,184 patent/US7579761B2/en active Active
- 2006-05-10 CN CN2006100801804A patent/CN1862959B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235240A (en) * | 1990-05-25 | 1993-08-10 | Toyo Communication Equipment Co., Ltd. | Electrodes and their lead structures of an ultrathin piezoelectric resonator |
EP0486182A1 (en) * | 1990-11-15 | 1992-05-20 | Tosoh Corporation | Zinc oxide sintered body, and production and application thereof |
CN1144300C (zh) * | 1997-12-16 | 2004-03-31 | 株式会社村田制作所 | 压电谐振器 |
CN1160852C (zh) * | 1998-10-26 | 2004-08-04 | 株式会社村田制作所 | 能陷型压电谐振器和能陷型压电谐振器元件 |
US6414569B1 (en) * | 1999-11-01 | 2002-07-02 | Murata Manufacturing Co., Ltd. | Method of adjusting frequency of piezoelectric resonance element by removing material from a thicker electrode or adding, material to a thinner electrode |
Also Published As
Publication number | Publication date |
---|---|
JP4629492B2 (ja) | 2011-02-09 |
CN1862959A (zh) | 2006-11-15 |
JP2006319479A (ja) | 2006-11-24 |
US20060255693A1 (en) | 2006-11-16 |
KR100771345B1 (ko) | 2007-10-29 |
DE102006020992A1 (de) | 2006-11-23 |
US7579761B2 (en) | 2009-08-25 |
KR20060116712A (ko) | 2006-11-15 |
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