JP2002023353A5 - - Google Patents
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- Publication number
- JP2002023353A5 JP2002023353A5 JP2000212946A JP2000212946A JP2002023353A5 JP 2002023353 A5 JP2002023353 A5 JP 2002023353A5 JP 2000212946 A JP2000212946 A JP 2000212946A JP 2000212946 A JP2000212946 A JP 2000212946A JP 2002023353 A5 JP2002023353 A5 JP 2002023353A5
- Authority
- JP
- Japan
- Prior art keywords
- acid
- positive photosensitive
- photosensitive composition
- composition according
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002253 acid Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- ILFFFKFZHRGICY-UHFFFAOYSA-N anthracene-1-sulfonic acid Chemical group C1=CC=C2C=C3C(S(=O)(=O)O)=CC=CC3=CC2=C1 ILFFFKFZHRGICY-UHFFFAOYSA-N 0.000 description 2
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical group OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 2
- 229940092714 benzenesulfonic acid Drugs 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 125000002950 monocyclic group Chemical group 0.000 description 2
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical group C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000686 lactone group Chemical group 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- -1 nitrogen-containing basic compound Chemical class 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000212946A JP4150491B2 (ja) | 2000-07-13 | 2000-07-13 | ポジ型感光性組成物 |
| TW090114950A TWI288858B (en) | 2000-07-13 | 2001-06-20 | Positive photosensitive composition |
| KR1020010041877A KR100787887B1 (ko) | 2000-07-13 | 2001-07-12 | 포지티브 감광성 조성물 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000212946A JP4150491B2 (ja) | 2000-07-13 | 2000-07-13 | ポジ型感光性組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002023353A JP2002023353A (ja) | 2002-01-23 |
| JP2002023353A5 true JP2002023353A5 (enExample) | 2006-01-12 |
| JP4150491B2 JP4150491B2 (ja) | 2008-09-17 |
Family
ID=18708780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000212946A Expired - Fee Related JP4150491B2 (ja) | 2000-07-13 | 2000-07-13 | ポジ型感光性組成物 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4150491B2 (enExample) |
| KR (1) | KR100787887B1 (enExample) |
| TW (1) | TWI288858B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7521168B2 (en) * | 2002-02-13 | 2009-04-21 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
| JP4639062B2 (ja) | 2003-11-21 | 2011-02-23 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| JP4300131B2 (ja) * | 2004-02-16 | 2009-07-22 | 富士フイルム株式会社 | 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法 |
| JP7406983B2 (ja) * | 2019-12-26 | 2023-12-28 | 住友化学株式会社 | 組成物および表示装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69027799T2 (de) * | 1989-03-14 | 1997-01-23 | Ibm | Chemisch amplifizierter Photolack |
| JP3342124B2 (ja) * | 1992-09-14 | 2002-11-05 | 和光純薬工業株式会社 | 微細パターン形成材料及びパターン形成方法 |
| JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
| EP0789279B2 (en) * | 1996-02-09 | 2004-12-08 | Wako Pure Chemical Industries Ltd | Polymer and resist material |
| US6037107A (en) * | 1997-08-28 | 2000-03-14 | Shipley Company, L.L.C. | Photoresist compositions |
| US6037097A (en) * | 1998-01-27 | 2000-03-14 | International Business Machines Corporation | E-beam application to mask making using new improved KRS resist system |
| JP3989087B2 (ja) * | 1998-05-25 | 2007-10-10 | 住友ベークライト株式会社 | フォトレジスト用被膜形成材料、フォトレジスト組成物及びパターン形成方法 |
| JP2000047387A (ja) * | 1998-07-28 | 2000-02-18 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| US7704668B1 (en) * | 1998-08-04 | 2010-04-27 | Rohm And Haas Electronic Materials Llc | Photoresist compositions and methods and articles of manufacture comprising same |
| KR100281902B1 (ko) * | 1998-08-18 | 2001-03-02 | 윤종용 | 백본이 환상 구조를 가지는 감광성 폴리머 및 이를 포함하는 레지스트 조성물 |
| JP3876571B2 (ja) * | 1998-08-26 | 2007-01-31 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| US6569971B2 (en) * | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
| JP3640290B2 (ja) * | 1998-10-02 | 2005-04-20 | 東京応化工業株式会社 | ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材 |
| JP4007570B2 (ja) * | 1998-10-16 | 2007-11-14 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JP4410326B2 (ja) * | 1998-10-29 | 2010-02-03 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料及びパターン形成方法 |
-
2000
- 2000-07-13 JP JP2000212946A patent/JP4150491B2/ja not_active Expired - Fee Related
-
2001
- 2001-06-20 TW TW090114950A patent/TWI288858B/zh not_active IP Right Cessation
- 2001-07-12 KR KR1020010041877A patent/KR100787887B1/ko not_active Expired - Lifetime