JP2001521262A5 - - Google Patents
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- JP2001521262A5 JP2001521262A5 JP2000518387A JP2000518387A JP2001521262A5 JP 2001521262 A5 JP2001521262 A5 JP 2001521262A5 JP 2000518387 A JP2000518387 A JP 2000518387A JP 2000518387 A JP2000518387 A JP 2000518387A JP 2001521262 A5 JP2001521262 A5 JP 2001521262A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/956,981 | 1997-10-24 | ||
| US08/956,981 US5999482A (en) | 1997-10-24 | 1997-10-24 | High speed memory self-timing circuitry and methods for implementing the same |
| PCT/US1998/021939 WO1999022376A1 (en) | 1997-10-24 | 1998-10-20 | High speed memory self-timing circuitry and methods for implementing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001521262A JP2001521262A (ja) | 2001-11-06 |
| JP2001521262A5 true JP2001521262A5 (enExample) | 2006-01-05 |
| JP4209588B2 JP4209588B2 (ja) | 2009-01-14 |
Family
ID=25498928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000518387A Expired - Lifetime JP4209588B2 (ja) | 1997-10-24 | 1998-10-20 | 高速メモリ用自己タイミング回路及びその実現方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5999482A (enExample) |
| EP (1) | EP1025565B1 (enExample) |
| JP (1) | JP4209588B2 (enExample) |
| AU (1) | AU1096899A (enExample) |
| DE (1) | DE69815372T2 (enExample) |
| WO (1) | WO1999022376A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6016390A (en) * | 1998-01-29 | 2000-01-18 | Artisan Components, Inc. | Method and apparatus for eliminating bitline voltage offsets in memory devices |
| JP3548423B2 (ja) * | 1998-04-27 | 2004-07-28 | シャープ株式会社 | 半導体記憶装置 |
| US6629223B2 (en) * | 1998-10-06 | 2003-09-30 | Texas Instruments Incorporated | Method and apparatus for accessing a memory core multiple times in a single clock cycle |
| US6388931B1 (en) * | 1999-02-25 | 2002-05-14 | Micron Technology, Inc. | Dummy wordline for controlling the timing of the firing of sense amplifiers in a memory device in relation to the firing of wordlines in the memory device |
| US6181626B1 (en) | 2000-04-03 | 2001-01-30 | Lsi Logic Corporation | Self-timing circuit for semiconductor memory devices |
| US6212117B1 (en) * | 2000-06-07 | 2001-04-03 | Hitachi Ltd. | Duplicate bitline self-time technique for reliable memory operation |
| US6222791B1 (en) * | 2000-06-15 | 2001-04-24 | Artisan Components, Inc. | Slew tolerant clock input buffer and a self-timed memory core thereof |
| JP4894095B2 (ja) * | 2001-06-15 | 2012-03-07 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| JP4339532B2 (ja) * | 2001-07-25 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | セルフタイミング回路を有するスタティックメモリ |
| US6618309B2 (en) * | 2001-10-09 | 2003-09-09 | Analog Devices, Inc. | Adjustable memory self-timing circuit |
| US6730842B2 (en) * | 2001-12-19 | 2004-05-04 | Lsi Logic Corporation | Self-extraction panel hinge |
| US6980481B1 (en) * | 2001-12-20 | 2005-12-27 | Lsi Logic Corporatiion | Address transition detect control circuit for self timed asynchronous memories |
| JP2005025896A (ja) | 2003-07-04 | 2005-01-27 | Sony Corp | 半導体記憶装置、および半導体記憶装置の読み出し方法 |
| US6947349B1 (en) | 2003-09-03 | 2005-09-20 | T-Ram, Inc. | Apparatus and method for producing an output clock pulse and output clock generator using same |
| US7089439B1 (en) | 2003-09-03 | 2006-08-08 | T-Ram, Inc. | Architecture and method for output clock generation on a high speed memory device |
| US7464282B1 (en) | 2003-09-03 | 2008-12-09 | T-Ram Semiconductor, Inc. | Apparatus and method for producing dummy data and output clock generator using same |
| US6891774B1 (en) | 2003-09-03 | 2005-05-10 | T-Ram, Inc. | Delay line and output clock generator using same |
| JP4050690B2 (ja) * | 2003-11-21 | 2008-02-20 | 株式会社東芝 | 半導体集積回路装置 |
| WO2005052944A1 (ja) * | 2003-11-28 | 2005-06-09 | Fujitsu Limited | セルフタイミング回路を有する半導体メモリ |
| US8116159B2 (en) * | 2005-03-30 | 2012-02-14 | Ovonyx, Inc. | Using a bit specific reference level to read a resistive memory |
| US7668029B2 (en) | 2006-08-11 | 2010-02-23 | Freescale Semiconductor, Inc | Memory having sense time of variable duration |
| US7518947B2 (en) * | 2006-09-28 | 2009-04-14 | Freescale Semiconductor, Inc. | Self-timed memory having common timing control circuit and method therefor |
| US7522461B2 (en) * | 2006-11-06 | 2009-04-21 | Infineon Technologies Flash Gmbh & Co. Kg | Memory device architecture and method for improved bitline pre-charge and wordline timing |
| DE102006054781A1 (de) * | 2006-11-21 | 2008-05-29 | Qimonda Flash Gmbh | Speichereinrichtung-Architektur und Verfahren zum verbesserten Bitleitung-Vorladen und Wortleitung-Timing |
| US7746716B2 (en) * | 2007-02-22 | 2010-06-29 | Freescale Semiconductor, Inc. | Memory having a dummy bitline for timing control |
| JP5000466B2 (ja) | 2007-11-28 | 2012-08-15 | イビデン株式会社 | 排気管 |
| US8233337B2 (en) * | 2009-10-19 | 2012-07-31 | International Business Machines Corporation | SRAM delay circuit that tracks bitcell characteristics |
| JP5539916B2 (ja) | 2011-03-04 | 2014-07-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9384790B2 (en) | 2012-07-30 | 2016-07-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Memory device with separately controlled sense amplifiers |
| US8848414B2 (en) | 2012-10-22 | 2014-09-30 | International Business Machines Corporation | Memory system incorporating a circuit to generate a delay signal and an associated method of operating a memory system |
| US8730750B1 (en) | 2012-10-28 | 2014-05-20 | Lsi Corporation | Memory device with control circuitry for generating a reset signal in read and write modes of operation |
| JP5732575B2 (ja) * | 2014-05-01 | 2015-06-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| EP3204060A1 (en) * | 2014-10-07 | 2017-08-16 | Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. | On-demand degradable medical devices |
| US9881687B2 (en) * | 2015-12-18 | 2018-01-30 | Texas Instruments Incorporated | Self-latch sense timing in a one-time-programmable memory architecture |
| US10156842B2 (en) | 2015-12-31 | 2018-12-18 | General Electric Company | Device enrollment in a cloud service using an authenticated application |
| US9905315B1 (en) * | 2017-01-24 | 2018-02-27 | Nxp B.V. | Error-resilient memory device with row and/or column folding with redundant resources and repair method thereof |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4084240A (en) * | 1976-07-28 | 1978-04-11 | Chrysler Corporation | Mass production of electronic control units for engines |
| JPH07118196B2 (ja) * | 1988-12-28 | 1995-12-18 | 株式会社東芝 | スタティック型半導体メモリ |
| JPH0373495A (ja) * | 1989-02-15 | 1991-03-28 | Ricoh Co Ltd | 半導体メモリ装置 |
| US5146427A (en) * | 1989-08-30 | 1992-09-08 | Hitachi Ltd. | High speed semiconductor memory having a direct-bypass signal path |
| JPH03156795A (ja) * | 1989-11-15 | 1991-07-04 | Toshiba Micro Electron Kk | 半導体メモリ回路装置 |
| US5311471A (en) * | 1989-11-27 | 1994-05-10 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
| JP2789779B2 (ja) * | 1990-04-14 | 1998-08-20 | 日本電気株式会社 | メモリ装置 |
| US5414663A (en) * | 1992-07-09 | 1995-05-09 | Creative Integrated Systems, Inc. | VLSI memory with an improved sense amplifier with dummy bit lines for modeling addressable bit lines |
| JP2530055B2 (ja) * | 1990-08-30 | 1996-09-04 | 株式会社東芝 | 半導体集積回路 |
| EP0491105B1 (en) * | 1990-12-13 | 1996-05-01 | STMicroelectronics S.r.l. | Improved sense circuit for storage devices such as non-volatile memories, with enhanced sensing discrimination |
| IT1253678B (it) * | 1991-07-31 | 1995-08-22 | St Microelectronics Srl | Architettura antirumore per memoria |
| US5677864A (en) * | 1993-03-23 | 1997-10-14 | Chung; David Siu Fu | Intelligent memory architecture |
| US5555521A (en) * | 1994-06-14 | 1996-09-10 | Sanyo Electric Co., Ltd | Method of operating the semiconductor memory storing analog data and analog data storing apparatus |
| KR0154193B1 (ko) * | 1994-12-30 | 1998-12-01 | 김주용 | 센스 앰프회로 |
| JP2643896B2 (ja) * | 1995-02-23 | 1997-08-20 | 日本電気株式会社 | 半導体メモリ |
| US5561629A (en) * | 1995-03-10 | 1996-10-01 | Xilinx, Inc. | Latching sense amplifier for a programmable logic device |
| JPH08273365A (ja) * | 1995-03-31 | 1996-10-18 | Nec Corp | 半導体記憶装置 |
| FR2734390B1 (fr) * | 1995-05-19 | 1997-06-13 | Sgs Thomson Microelectronics | Circuit de detection de courant pour la lecture d'une memoire en circuit integre |
| JPH0973776A (ja) * | 1995-09-07 | 1997-03-18 | Mitsubishi Electric Corp | 同期型半導体記憶装置 |
| US5636161A (en) * | 1995-10-30 | 1997-06-03 | Cypress Semiconductor Corporation | Eprom bit-line interface for implementing programming, verification and testing |
| TW307869B (en) * | 1995-12-20 | 1997-06-11 | Toshiba Co Ltd | Semiconductor memory |
| US5596539A (en) * | 1995-12-28 | 1997-01-21 | Lsi Logic Corporation | Method and apparatus for a low power self-timed memory control system |
| US5608681A (en) * | 1996-01-22 | 1997-03-04 | Lsi Logic Corporation | Fast memory sense system |
| EP0810607B1 (en) * | 1996-05-17 | 2003-08-27 | Hyundai Electronics America, Inc. | Block write power reduction |
| US5751649A (en) * | 1997-02-26 | 1998-05-12 | Artisan Components, Inc. | High speed memory output circuitry and methods for implementing same |
-
1997
- 1997-10-24 US US08/956,981 patent/US5999482A/en not_active Expired - Lifetime
-
1998
- 1998-10-20 DE DE69815372T patent/DE69815372T2/de not_active Expired - Lifetime
- 1998-10-20 WO PCT/US1998/021939 patent/WO1999022376A1/en not_active Ceased
- 1998-10-20 JP JP2000518387A patent/JP4209588B2/ja not_active Expired - Lifetime
- 1998-10-20 AU AU10968/99A patent/AU1096899A/en not_active Abandoned
- 1998-10-20 EP EP98953641A patent/EP1025565B1/en not_active Expired - Lifetime