JP2001518553A5 - - Google Patents

Download PDF

Info

Publication number
JP2001518553A5
JP2001518553A5 JP2000514171A JP2000514171A JP2001518553A5 JP 2001518553 A5 JP2001518553 A5 JP 2001518553A5 JP 2000514171 A JP2000514171 A JP 2000514171A JP 2000514171 A JP2000514171 A JP 2000514171A JP 2001518553 A5 JP2001518553 A5 JP 2001518553A5
Authority
JP
Japan
Prior art keywords
substrate
photoresist
solution
film
developer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000514171A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001518553A (ja
Filing date
Publication date
Priority claimed from US08/939,451 external-priority patent/US5928836A/en
Application filed filed Critical
Publication of JP2001518553A publication Critical patent/JP2001518553A/ja
Publication of JP2001518553A5 publication Critical patent/JP2001518553A5/ja
Pending legal-status Critical Current

Links

JP2000514171A 1997-09-29 1998-09-16 分別されたノボラック樹脂コポリマー及びこれから得られるフォトレジスト組成物 Pending JP2001518553A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/939,451 US5928836A (en) 1997-09-29 1997-09-29 Fractionated novolak resin copolymer and photoresist composition therefrom
US08/939,451 1997-09-29
PCT/EP1998/005878 WO1999017166A1 (en) 1997-09-29 1998-09-16 Fractionated novolak resin copolymer and photoresist composition therefrom

Publications (2)

Publication Number Publication Date
JP2001518553A JP2001518553A (ja) 2001-10-16
JP2001518553A5 true JP2001518553A5 (enExample) 2006-01-05

Family

ID=25473210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000514171A Pending JP2001518553A (ja) 1997-09-29 1998-09-16 分別されたノボラック樹脂コポリマー及びこれから得られるフォトレジスト組成物

Country Status (8)

Country Link
US (1) US5928836A (enExample)
EP (1) EP1023637B1 (enExample)
JP (1) JP2001518553A (enExample)
KR (1) KR20010030763A (enExample)
CN (1) CN1142463C (enExample)
DE (1) DE69817003T2 (enExample)
TW (1) TW486606B (enExample)
WO (1) WO1999017166A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002102867A1 (en) * 2001-06-20 2002-12-27 The Additional Director (Ipr), Defence Research & Development Organisation 'high ortho' novolak copolymers and composition thereof
CN1802603A (zh) * 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
US7303994B2 (en) * 2004-06-14 2007-12-04 International Business Machines Corporation Process for interfacial adhesion in laminate structures through patterned roughing of a surface
PL1842864T3 (pl) * 2005-01-25 2013-12-31 Hodogaya Chemical Co Ltd Żywica rezorcynowo-formaldehydowa modyfikowana ketonem
KR101308431B1 (ko) * 2006-04-26 2013-09-30 엘지디스플레이 주식회사 인쇄용 레지스트 및 이를 이용한 패턴형성방법
US7642333B2 (en) * 2007-05-21 2010-01-05 Georgia-Pacific Chemicals Llc Anhydride and resorcinol latent catalyst system for improving cure characteristics of phenolic resins
JP5825884B2 (ja) * 2011-07-01 2015-12-02 旭化成イーマテリアルズ株式会社 フェノール樹脂組成物、及び硬化レリーフパターンの製造方法
JP6228460B2 (ja) * 2011-12-09 2017-11-08 旭化成株式会社 感光性樹脂組成物
KR102235159B1 (ko) * 2014-04-15 2021-04-05 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물, 및 이를 이용한 절연막 및 전자소자
TW201806996A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂及抗蝕劑材料
TW201806995A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂之製造方法
JP6828279B2 (ja) * 2016-06-13 2021-02-10 Dic株式会社 ノボラック型樹脂及びレジスト膜
JP7095405B2 (ja) * 2018-05-25 2022-07-05 住友ベークライト株式会社 感光性樹脂組成物用のノボラック型フェノール樹脂
KR20230022064A (ko) * 2021-08-06 2023-02-14 코오롱인더스트리 주식회사 알킬 페놀 수지의 제조 방법, 알킬 페놀 수지 및 이를 포함하는 고무 조성물

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3070435D1 (en) * 1979-12-27 1985-05-09 Mitsui Petrochemical Ind High-molecular-weight novolak substituted phenolic resins and their preparation
JPS60260611A (ja) * 1984-06-08 1985-12-23 Mitsubishi Petrochem Co Ltd 高分子量クレゾ−ルノボラツク樹脂の製造方法
EP0251187A3 (en) * 1986-06-27 1988-03-30 Nippon Zeon Co., Ltd. Method for purifying novolak resins useful as material for coating on a semiconductor substrate
US5238776A (en) * 1986-12-23 1993-08-24 Shipley Company Inc. Photoresist composition containing block copolymer resin and positive-working o-quinone diazide or negative-working azide sensitizer compound
US5266440A (en) * 1986-12-23 1993-11-30 Shipley Company Inc. Photoresist composition with aromatic novolak binder having a weight-average molecular weight in excess of 1500 Daltons
US5130410A (en) * 1986-12-23 1992-07-14 Shipley Company Inc. Alternating and block copolymer resins
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
US5665517A (en) * 1996-01-11 1997-09-09 Hoechst Celanese Corporation Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom

Similar Documents

Publication Publication Date Title
EP0005775B1 (en) Article comprising a substrate and an overlying processing layer of actinic radiation-sensitive material and process for fabrication of the article
US5516886A (en) Metal ion reduction in top anti-reflective coatings for photoresists
EP1097405A1 (en) Composition for stripping photoresist and organic materials from substrate surfaces
JP3805373B2 (ja) キレート形成性イオン交換樹脂によってフォトレジスト組成物中の金属イオンを低減させる方法
WO1994015262A1 (en) Process for producing a developer having a low metal ion level
JP2001518553A5 (enExample)
CN1074141C (zh) 低金属离子含量的对-甲酚低聚物和光敏的组合物
JPH10512309A (ja) キレート形成性イオン交換樹脂によってpgmea中でノボラック樹脂溶液中の金属イオンを低減させる方法
JP3924317B2 (ja) 陰イオン交換樹脂を使用する、ノボラック樹脂溶液中の金属イオン低減
WO2002010858A2 (en) Process for manufacturing a microelectronic device
CN1108326C (zh) 由甲酚-甲醛反应混合物分馏的酚醛清漆树脂和由它得到的抗光蚀剂组合物
KR20000057619A (ko) 이온 교환에 의해 유기 극성 용매를 포함하는 포토레지스트조성물내의 금속 이온 오염물을 감소시키는 방법
KR19990045753A (ko) 페놀 포름알데히드 축합물의 분별증류 및 이로부터 제조된포토레지스트 조성물
JP2002508415A5 (enExample)
JP2002519192A (ja) イオン交換パックによる微量の金属イオンの低減方法
CN1108327C (zh) 分馏酚醛清漆树脂和由其得到的抗光蚀剂组合物
JP3135585B2 (ja) 2,4―ジニトロ―1―ナフトールを含有するポジ型フォトレジスト組成物
JP2002508415A (ja) 分別したノボラック樹脂およびそれから得られるフォトレジスト組成物
KR100414854B1 (ko) 고온증류를수반하지않는노볼락수지의분리법및이수지유래의포토레지스트조성물
JPH09143237A (ja) 安定した分子量を有するノボラック樹脂およびそれから製造されるフォトレジスト
CN1120190C (zh) 无需高温蒸馏分离酚醛清漆树脂和由此得到的抗光蚀剂组合物
KR20020036117A (ko) 내산성을 지닌 감광성 보호막 조성물