TW486606B - Method for producing film forming novolak resin and method for producing positive photoresist composition or semiconductor device using the same - Google Patents

Method for producing film forming novolak resin and method for producing positive photoresist composition or semiconductor device using the same Download PDF

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Publication number
TW486606B
TW486606B TW087115826A TW87115826A TW486606B TW 486606 B TW486606 B TW 486606B TW 087115826 A TW087115826 A TW 087115826A TW 87115826 A TW87115826 A TW 87115826A TW 486606 B TW486606 B TW 486606B
Authority
TW
Taiwan
Prior art keywords
water
acid
photoresist
copolymer
resin copolymer
Prior art date
Application number
TW087115826A
Other languages
English (en)
Chinese (zh)
Inventor
M Dalil Rahman
Stanley F Wanat
Michelle M Cook
Douglas S Mckenzie
Sunit S Dixit
Original Assignee
Clariant Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Int Ltd filed Critical Clariant Int Ltd
Application granted granted Critical
Publication of TW486606B publication Critical patent/TW486606B/zh

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
TW087115826A 1997-09-29 1998-09-23 Method for producing film forming novolak resin and method for producing positive photoresist composition or semiconductor device using the same TW486606B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/939,451 US5928836A (en) 1997-09-29 1997-09-29 Fractionated novolak resin copolymer and photoresist composition therefrom

Publications (1)

Publication Number Publication Date
TW486606B true TW486606B (en) 2002-05-11

Family

ID=25473210

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087115826A TW486606B (en) 1997-09-29 1998-09-23 Method for producing film forming novolak resin and method for producing positive photoresist composition or semiconductor device using the same

Country Status (8)

Country Link
US (1) US5928836A (enExample)
EP (1) EP1023637B1 (enExample)
JP (1) JP2001518553A (enExample)
KR (1) KR20010030763A (enExample)
CN (1) CN1142463C (enExample)
DE (1) DE69817003T2 (enExample)
TW (1) TW486606B (enExample)
WO (1) WO1999017166A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014086A1 (en) * 2001-06-20 2005-01-20 Eswaran Sambasivan Venkat "High ortho" novolak copolymers and composition thereof
AU2003286758A1 (en) * 2003-07-17 2005-03-07 Honeywell International Inc Planarization films for advanced microelectronic applications and devices and methods of production thereof
US7303994B2 (en) * 2004-06-14 2007-12-04 International Business Machines Corporation Process for interfacial adhesion in laminate structures through patterned roughing of a surface
KR101154635B1 (ko) * 2005-01-25 2012-06-08 호도가야 가가쿠 고교 가부시키가이샤 케톤 변성 레조르신 포르말린 수지
KR101308431B1 (ko) * 2006-04-26 2013-09-30 엘지디스플레이 주식회사 인쇄용 레지스트 및 이를 이용한 패턴형성방법
US7642333B2 (en) * 2007-05-21 2010-01-05 Georgia-Pacific Chemicals Llc Anhydride and resorcinol latent catalyst system for improving cure characteristics of phenolic resins
JP5825884B2 (ja) * 2011-07-01 2015-12-02 旭化成イーマテリアルズ株式会社 フェノール樹脂組成物、及び硬化レリーフパターンの製造方法
CN107329367B (zh) * 2011-12-09 2021-03-23 旭化成株式会社 感光性树脂组合物、固化浮雕图案的制造方法、半导体装置及显示体装置
KR102235159B1 (ko) * 2014-04-15 2021-04-05 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물, 및 이를 이용한 절연막 및 전자소자
TW201806996A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂及抗蝕劑材料
TW201806995A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂之製造方法
JP6828279B2 (ja) * 2016-06-13 2021-02-10 Dic株式会社 ノボラック型樹脂及びレジスト膜
JP7095405B2 (ja) * 2018-05-25 2022-07-05 住友ベークライト株式会社 感光性樹脂組成物用のノボラック型フェノール樹脂
KR20230022064A (ko) * 2021-08-06 2023-02-14 코오롱인더스트리 주식회사 알킬 페놀 수지의 제조 방법, 알킬 페놀 수지 및 이를 포함하는 고무 조성물

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342852A (en) * 1979-12-27 1982-08-03 Mitsui Petrochemical Industries, Ltd. Setting type resin composition containing a substantially linear, high-molecular-weight novolak substituted phenolic resin
JPS60260611A (ja) * 1984-06-08 1985-12-23 Mitsubishi Petrochem Co Ltd 高分子量クレゾ−ルノボラツク樹脂の製造方法
EP0251187A3 (en) * 1986-06-27 1988-03-30 Nippon Zeon Co., Ltd. Method for purifying novolak resins useful as material for coating on a semiconductor substrate
US5238776A (en) * 1986-12-23 1993-08-24 Shipley Company Inc. Photoresist composition containing block copolymer resin and positive-working o-quinone diazide or negative-working azide sensitizer compound
US5130410A (en) * 1986-12-23 1992-07-14 Shipley Company Inc. Alternating and block copolymer resins
US5266440A (en) * 1986-12-23 1993-11-30 Shipley Company Inc. Photoresist composition with aromatic novolak binder having a weight-average molecular weight in excess of 1500 Daltons
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
US5665517A (en) * 1996-01-11 1997-09-09 Hoechst Celanese Corporation Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom

Also Published As

Publication number Publication date
JP2001518553A (ja) 2001-10-16
EP1023637A1 (en) 2000-08-02
CN1278336A (zh) 2000-12-27
EP1023637B1 (en) 2003-08-06
CN1142463C (zh) 2004-03-17
US5928836A (en) 1999-07-27
DE69817003D1 (de) 2003-09-11
DE69817003T2 (de) 2004-06-09
WO1999017166A1 (en) 1999-04-08
KR20010030763A (ko) 2001-04-16

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