KR20010030763A - 분별된 노볼락 수지 공중합체 및 그로부터의 포토레지스트조성물 - Google Patents

분별된 노볼락 수지 공중합체 및 그로부터의 포토레지스트조성물 Download PDF

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Publication number
KR20010030763A
KR20010030763A KR1020007003321A KR20007003321A KR20010030763A KR 20010030763 A KR20010030763 A KR 20010030763A KR 1020007003321 A KR1020007003321 A KR 1020007003321A KR 20007003321 A KR20007003321 A KR 20007003321A KR 20010030763 A KR20010030763 A KR 20010030763A
Authority
KR
South Korea
Prior art keywords
novolak resin
resin copolymer
copolymer
water
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020007003321A
Other languages
English (en)
Korean (ko)
Inventor
라만엠.댈릴
와낫스탠리에프.
쿡미첼엠.
맥켄지더글라스에스.
딕싯써닛에스.
Original Assignee
데머 얀, 당코 제니아 떼.
클라리언트 인터내셔널 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 데머 얀, 당코 제니아 떼., 클라리언트 인터내셔널 리미티드 filed Critical 데머 얀, 당코 제니아 떼.
Publication of KR20010030763A publication Critical patent/KR20010030763A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
KR1020007003321A 1997-09-29 1998-09-16 분별된 노볼락 수지 공중합체 및 그로부터의 포토레지스트조성물 Ceased KR20010030763A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/939,451 1997-09-29
US08/939,451 US5928836A (en) 1997-09-29 1997-09-29 Fractionated novolak resin copolymer and photoresist composition therefrom
PCT/EP1998/005878 WO1999017166A1 (en) 1997-09-29 1998-09-16 Fractionated novolak resin copolymer and photoresist composition therefrom

Publications (1)

Publication Number Publication Date
KR20010030763A true KR20010030763A (ko) 2001-04-16

Family

ID=25473210

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007003321A Ceased KR20010030763A (ko) 1997-09-29 1998-09-16 분별된 노볼락 수지 공중합체 및 그로부터의 포토레지스트조성물

Country Status (8)

Country Link
US (1) US5928836A (enExample)
EP (1) EP1023637B1 (enExample)
JP (1) JP2001518553A (enExample)
KR (1) KR20010030763A (enExample)
CN (1) CN1142463C (enExample)
DE (1) DE69817003T2 (enExample)
TW (1) TW486606B (enExample)
WO (1) WO1999017166A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023013901A1 (ko) * 2021-08-06 2023-02-09 코오롱인더스트리 주식회사 알킬 페놀 수지의 제조 방법, 알킬 페놀 수지 및 이를 포함하는 고무 조성물

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014086A1 (en) * 2001-06-20 2005-01-20 Eswaran Sambasivan Venkat "High ortho" novolak copolymers and composition thereof
JP4426526B2 (ja) * 2003-07-17 2010-03-03 ハネウエル・インターナシヨナル・インコーポレーテツド 最新式のマイクロエレクトロニクス用途およびデバイス用の平坦化膜およびそれらの製造方法
US7303994B2 (en) * 2004-06-14 2007-12-04 International Business Machines Corporation Process for interfacial adhesion in laminate structures through patterned roughing of a surface
TWI366580B (en) * 2005-01-25 2012-06-21 Hodogaya Chemical Co Ltd Ketone-modified resorcinol-formalin resin and process for producing the same
KR101308431B1 (ko) * 2006-04-26 2013-09-30 엘지디스플레이 주식회사 인쇄용 레지스트 및 이를 이용한 패턴형성방법
US7642333B2 (en) * 2007-05-21 2010-01-05 Georgia-Pacific Chemicals Llc Anhydride and resorcinol latent catalyst system for improving cure characteristics of phenolic resins
JP5825884B2 (ja) * 2011-07-01 2015-12-02 旭化成イーマテリアルズ株式会社 フェノール樹脂組成物、及び硬化レリーフパターンの製造方法
CN103988127B (zh) * 2011-12-09 2019-04-19 旭化成株式会社 感光性树脂组合物、固化浮雕图案的制造方法、半导体装置及显示体装置
KR102235159B1 (ko) * 2014-04-15 2021-04-05 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물, 및 이를 이용한 절연막 및 전자소자
TW201806995A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂之製造方法
TW201806996A (zh) * 2016-04-06 2018-03-01 迪愛生股份有限公司 酚醛清漆型樹脂及抗蝕劑材料
JP6828279B2 (ja) * 2016-06-13 2021-02-10 Dic株式会社 ノボラック型樹脂及びレジスト膜
JP7095405B2 (ja) * 2018-05-25 2022-07-05 住友ベークライト株式会社 感光性樹脂組成物用のノボラック型フェノール樹脂

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345054A (en) * 1979-12-27 1982-08-17 Mitsui Petrochemical Industries, Ltd. High-molecular-weight novolak types substituted phenolic resins and process for preparation thereof
JPS60260611A (ja) * 1984-06-08 1985-12-23 Mitsubishi Petrochem Co Ltd 高分子量クレゾ−ルノボラツク樹脂の製造方法
EP0251187A3 (en) * 1986-06-27 1988-03-30 Nippon Zeon Co., Ltd. Method for purifying novolak resins useful as material for coating on a semiconductor substrate
US5238776A (en) * 1986-12-23 1993-08-24 Shipley Company Inc. Photoresist composition containing block copolymer resin and positive-working o-quinone diazide or negative-working azide sensitizer compound
US5266440A (en) * 1986-12-23 1993-11-30 Shipley Company Inc. Photoresist composition with aromatic novolak binder having a weight-average molecular weight in excess of 1500 Daltons
US5130410A (en) * 1986-12-23 1992-07-14 Shipley Company Inc. Alternating and block copolymer resins
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
US5665517A (en) * 1996-01-11 1997-09-09 Hoechst Celanese Corporation Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023013901A1 (ko) * 2021-08-06 2023-02-09 코오롱인더스트리 주식회사 알킬 페놀 수지의 제조 방법, 알킬 페놀 수지 및 이를 포함하는 고무 조성물

Also Published As

Publication number Publication date
US5928836A (en) 1999-07-27
EP1023637A1 (en) 2000-08-02
JP2001518553A (ja) 2001-10-16
CN1278336A (zh) 2000-12-27
EP1023637B1 (en) 2003-08-06
DE69817003T2 (de) 2004-06-09
WO1999017166A1 (en) 1999-04-08
TW486606B (en) 2002-05-11
CN1142463C (zh) 2004-03-17
DE69817003D1 (de) 2003-09-11

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