JP2001503840A - ガスパネル - Google Patents
ガスパネルInfo
- Publication number
- JP2001503840A JP2001503840A JP52259798A JP52259798A JP2001503840A JP 2001503840 A JP2001503840 A JP 2001503840A JP 52259798 A JP52259798 A JP 52259798A JP 52259798 A JP52259798 A JP 52259798A JP 2001503840 A JP2001503840 A JP 2001503840A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- manifold
- valve
- hole
- panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims description 276
- 230000000694 effects Effects 0.000 claims description 26
- 238000004891 communication Methods 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000746 purification Methods 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 21
- 238000010926 purge Methods 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 238000003466 welding Methods 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 210000002310 elbow joint Anatomy 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K11/00—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves
- F16K11/10—Multiple-way valves, e.g. mixing valves; Pipe fittings incorporating such valves with two or more closure members not moving as a unit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/4238—With cleaner, lubrication added to fluid or liquid sealing at valve interface
- Y10T137/4245—Cleaning or steam sterilizing
- Y10T137/4259—With separate material addition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/5109—Convertible
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/5109—Convertible
- Y10T137/5283—Units interchangeable between alternate locations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/877—With flow control means for branched passages
- Y10T137/87885—Sectional block structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87917—Flow path with serial valves and/or closures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- General Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Valve Housings (AREA)
- Details Of Valves (AREA)
- Multiple-Way Valves (AREA)
- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.複数のプロセスガスを取り扱うガスパネルアセンブリ用プロセスガスライン であって、 プロセスガス源からプロセスガスを受け取るプロセスガス流入口と、 少なくとも1つの横方向に延びるマニホールド面を備え、プロセスガスを受け 取るガス流入口と連通するマニホールド流入口を備え、マニホールド流入口から マニホールド流出口へ大部分は横方向にプロセスガスを流す内部ガス経路を備え 、前記マニホールド面から延在しかつ接続ポートとガス流体連通する装置をマウ ントし、前記内部ガス経路と連通する複数の装置接続ポートを前記マニホールド 面に沿って備える一体型マニホールドと、 前記マニホールド流出口に接続されたプロセスガス流出口と、 を備えることを特徴とするプロセスガスライン。 2.それぞれ少なくとも3つの同じコンポーネント収容ステーションを備え、前 記各コンポーネント収容ステーションが、ガス流入口とガス流出口とを備え、複 数の一体型マニホールド本体の第1のコンポーネント収容ステーションのガス流 出口が、マニホールド内にある永久接続箇所により、隣接するコンポーネント収 容ステーションのガス流入口に接続されている複数の一体型マニホールド本体と 、 前記マニホールドブロックの1つにある個々の収容ステーションにそれぞれ接 続され、少なくとも1つのバルブと少なくとも1つのマスフロー制御装置とを備 える複数のガスコンポーネントと、 を備えることを特徴とする複数のプロセスガスを取り扱うガスパネル。 3.前記ガスコンポーネントのいずれか1つが、浄化装置を備えることを特徴と する請求項2に記載のガスパネル。 4.前記ガスコンポーネントのいずれか1つが、フィルタを備えることを特徴と する請求項2に記載のガスパネル。 5.前記ガスコンポーネントのいずれか1つが、圧力トランスデューサを備える ことを特徴とする請求項2に記載のガスパネル。 6.前記バルブが、空圧バルブであることを特徴とする請求項2に記載のガスパ ネル。 7.前記バルブが、手動バルブであることを特徴とする請求項2に記載のガスパ ネル。 8.前記ガスコンポーネントのいずれか1つが、圧力レギュレータを備えること を特徴とする請求項2に記載のガスパネル。 9.それぞれ少なくとも3つの同じコンポーネント収容ステーションを備え、前 記各コンポーネント収容ステーションが、ガス流入口とガス流出口とを備え、複 数の一体型マニホールド本体の第1のコンポーネント収容ステーションのガス流 出口が、マニホールドとの永久接続箇所により、隣接するコンポーネント収容ス テーションのガス流入口に接続されている複数の一体型マニホールド本体と、 前記マニホールドブロックの1つにある収容ステーションの1つに接続された ガス遮断バルブと、 前記ガス遮断バルブからガスを受けるように接続されたマスフロー制御装置と を備えることを特徴とするガスパネル。 10.前記一体型マニホールド本体のいずれか1つに接続した浄化装置をさらに 備える請求項9に記載のガスパネル。 11.前記一体型マニホールドのいずれか1つに接続したフィルタをさらに備え ることを特徴とする請求項9に記載のガスパネル。 12.前記一体型マニホールドのいずれか1つに接続した圧力トランスデューサ をさらに備えることを特徴とする請求項9に記載のガスパネル。 13.前記一体型マニホールドのいずれか1つに接続した圧力レギュレータをさ らに備えることを特徴とする請求項9に記載のガスパネル。 14.床部と、 前記床部から上方に延び、それぞれ前記床部に対して調整可能である複数のロ ッドと、 前記床部に対する調整を行うためにロッド上に配置され、マニホールドの上面 の活動装置部分が、ガスパネル内に位置するその他のマニホールドと平面内で整 合するように複数の活動装置収容ステーションを備える、一体型ガスパネルマニ ホールドと、 を備えることを特徴とするガスパネル外囲い。 15.複数のガス流入口と、 前記複数のガス流入口のそれぞれに接続され、それぞれほぼ横方向の貫通ガス 経路を画定し、その上面全体に複数の活動装置ステーションを配置した一体型ガ スパネルマニホールドと、 前記ガスを受ける各活動装置ステーションに、取り外し可能に接続され、それ ぞれ、活動装置ステーションの流入および流出ポートの両方に、1つの装置コネ クタで接続された複数の取り外し可能な活動装置と、 前記一体型マニホールドに接続された複数のガス流出口と、 を備えることを特徴とするガスパネル。 16.前記取り外し可能な活動装置が、遮断バルブ、圧力レギュレータ、および マスフロー制御装置をさらに備えることを特徴とする請求項15に記載のガスパ ネル。 17.前記取り外し可能な活動装置が、手動遮断バルブをさらに備えることを特 徴とする請求項16に記載のガスパネル。 18.前記マニホールドと活動装置の間のインタフェース領域がほぼ平坦であり 、マニホールドの流入口からマニホールドの流出口に向かうガスの流れにほぼ平 行であることを特徴とする請求項15に記載のガスパネル。 19.シールと、 ベースと整列してシールを接続するリテーナと、一体型マニホールドの流入穴 からガスを受けるガス流入口および一体型マニホールドの流出口にガスを供給す るガス流出口を備える一対のガスポートと、を備えるベースと、 前記ベースに一体型マニホールドを組み付けるときに一体型マニホールドと接 続するベースで保持される固定具と、 を備えることを特徴とする一体型マニホールドの活動サイトへの接続を行うフ ランジ。 20.ベースと、 前記ベースに取り付けたキーパと、 前記キーパにより支持されるシールと、 前記ベースで保持され、ベースを貫通して延びる、ガスパネルのマニホールド との接続用固定具と、 マニホールド付ベースの組立て前にベースに固定具を保持するリテーナと、 を備えることを特徴とするガスパネルと併用する事前組立て済み活動装置。 21.少なくとも1つの横方向に延在するマニホールド面を備え、ガスを受ける マニホールド流入口を備え、マニホールド流入口からマニホールド流出口へ大部 分は横方向にプロセスガスを流す内部ガス経路を備え、前記マニホールド面から 延在しかつ接続ポートとガス流体連通する装置をマウントし、前記内部ガス経路 と連通する複数の装置接続ポートを前記マニホールド面に沿って備え、ツールに プロセスガスを供給するべく前記内部ガス経路とガス連通するガス流出口とを備 える一体型マニホールド本体を備えることを特徴とするガスを取り扱うガスパネ ルアセンブリ用の一体型マニホールド。 22.前記内部ガス経路が、角を成した対の穴を備え、該穴は前記装置接続ポー トから次の装置接続ポートにガスを運ぶための装置接続ポート間のV経路を画定 することを特徴とする請求項21に記載のガスを取り扱うガスパネルアセンブリ 用の一体型マニホールド。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US08/739,936 | 1996-10-30 | ||
US08/739,936 US5992463A (en) | 1996-10-30 | 1996-10-30 | Gas panel |
PCT/US1997/019709 WO1998021744A2 (en) | 1996-10-30 | 1997-10-29 | Gas panel |
Publications (2)
Publication Number | Publication Date |
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JP2001503840A true JP2001503840A (ja) | 2001-03-21 |
JP2001503840A5 JP2001503840A5 (ja) | 2005-03-10 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP52259798A Ceased JP2001503840A (ja) | 1996-10-30 | 1997-10-29 | ガスパネル |
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US (7) | US5992463A (ja) |
EP (1) | EP0938634B1 (ja) |
JP (1) | JP2001503840A (ja) |
KR (1) | KR100633190B1 (ja) |
AU (1) | AU5097198A (ja) |
DE (1) | DE69734997T2 (ja) |
TW (1) | TW406306B (ja) |
WO (1) | WO1998021744A2 (ja) |
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- 1997-10-29 WO PCT/US1997/019709 patent/WO1998021744A2/en not_active Application Discontinuation
- 1997-10-29 AU AU50971/98A patent/AU5097198A/en not_active Abandoned
- 1997-10-29 EP EP97913896A patent/EP0938634B1/en not_active Revoked
- 1997-10-29 DE DE69734997T patent/DE69734997T2/de not_active Revoked
- 1997-10-29 JP JP52259798A patent/JP2001503840A/ja not_active Ceased
- 1997-10-30 TW TW086116147A patent/TW406306B/zh not_active IP Right Cessation
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1999
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- 1999-08-10 US US09/371,655 patent/US6189570B1/en not_active Expired - Fee Related
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2000
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2001
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Cited By (7)
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JP2006132598A (ja) * | 2004-11-04 | 2006-05-25 | Ckd Corp | ガス供給集積ユニット |
JP4555052B2 (ja) * | 2004-11-04 | 2010-09-29 | シーケーディ株式会社 | ガス供給集積ユニット |
JP2012229807A (ja) * | 2006-08-23 | 2012-11-22 | Horiba Stec Co Ltd | 集積型ガスパネル装置 |
US8820360B2 (en) | 2006-08-23 | 2014-09-02 | Horiba Stec, Co., Ltd. | Integrated gas panel apparatus |
JP2013127312A (ja) * | 2007-07-12 | 2013-06-27 | Talon Innovations Corp | Msm構成部品及び関連ガスパネルアッセンブリ |
US11996301B2 (en) | 2019-04-15 | 2024-05-28 | Lam Research Corporation | Modular-component system for gas delivery |
JP7553468B2 (ja) | 2019-04-15 | 2024-09-18 | ラム リサーチ コーポレーション | ガス送給用のモジュール式構成要素システム |
Also Published As
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TW406306B (en) | 2000-09-21 |
DE69734997D1 (de) | 2006-02-02 |
US6192938B1 (en) | 2001-02-27 |
KR100633190B1 (ko) | 2006-10-11 |
US20020046775A1 (en) | 2002-04-25 |
US6142539A (en) | 2000-11-07 |
KR20000052913A (ko) | 2000-08-25 |
AU5097198A (en) | 1998-06-03 |
US20020020353A1 (en) | 2002-02-21 |
US6435215B1 (en) | 2002-08-20 |
EP0938634A2 (en) | 1999-09-01 |
US5992463A (en) | 1999-11-30 |
EP0938634B1 (en) | 2005-12-28 |
WO1998021744A2 (en) | 1998-05-22 |
EP0938634A4 (en) | 2004-10-06 |
WO1998021744A9 (en) | 1999-06-10 |
US6189570B1 (en) | 2001-02-20 |
US6474700B2 (en) | 2002-11-05 |
DE69734997T2 (de) | 2006-09-21 |
WO1998021744A3 (en) | 1998-10-22 |
US20010013371A1 (en) | 2001-08-16 |
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