JP2001326175A5 - - Google Patents

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Publication number
JP2001326175A5
JP2001326175A5 JP2000140829A JP2000140829A JP2001326175A5 JP 2001326175 A5 JP2001326175 A5 JP 2001326175A5 JP 2000140829 A JP2000140829 A JP 2000140829A JP 2000140829 A JP2000140829 A JP 2000140829A JP 2001326175 A5 JP2001326175 A5 JP 2001326175A5
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JP
Japan
Prior art keywords
film
amorphous semiconductor
forming
insulating film
manufacturing
Prior art date
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Application number
JP2000140829A
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English (en)
Japanese (ja)
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JP2001326175A (ja
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Publication date
Application filed filed Critical
Priority to JP2000140829A priority Critical patent/JP2001326175A/ja
Priority claimed from JP2000140829A external-priority patent/JP2001326175A/ja
Publication of JP2001326175A publication Critical patent/JP2001326175A/ja
Publication of JP2001326175A5 publication Critical patent/JP2001326175A5/ja
Withdrawn legal-status Critical Current

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JP2000140829A 2000-05-12 2000-05-12 半導体装置の作製方法 Withdrawn JP2001326175A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000140829A JP2001326175A (ja) 2000-05-12 2000-05-12 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000140829A JP2001326175A (ja) 2000-05-12 2000-05-12 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2001326175A JP2001326175A (ja) 2001-11-22
JP2001326175A5 true JP2001326175A5 (enExample) 2007-07-12

Family

ID=18648050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000140829A Withdrawn JP2001326175A (ja) 2000-05-12 2000-05-12 半導体装置の作製方法

Country Status (1)

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JP (1) JP2001326175A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130008037A (ko) * 2010-03-05 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하는 방법
CN104880885B (zh) * 2015-04-30 2017-12-26 浙江上方电子装备有限公司 一种电致变色玻璃的驱动方式

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3497198B2 (ja) * 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
JP3522381B2 (ja) * 1995-03-01 2004-04-26 株式会社半導体エネルギー研究所 薄膜半導体デバイス及び薄膜半導体デバイスの作製方法
JPH10303128A (ja) * 1997-04-30 1998-11-13 Fujitsu Ltd 成膜方法
JP4566295B2 (ja) * 1997-06-10 2010-10-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

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