JP2001326175A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法Info
- Publication number
- JP2001326175A JP2001326175A JP2000140829A JP2000140829A JP2001326175A JP 2001326175 A JP2001326175 A JP 2001326175A JP 2000140829 A JP2000140829 A JP 2000140829A JP 2000140829 A JP2000140829 A JP 2000140829A JP 2001326175 A JP2001326175 A JP 2001326175A
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous semiconductor
- insulating film
- forming
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims description 77
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000003682 fluorination reaction Methods 0.000 claims abstract description 24
- 238000002425 crystallisation Methods 0.000 claims abstract description 15
- 230000008025 crystallization Effects 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 296
- 239000000758 substrate Substances 0.000 claims description 69
- 238000011282 treatment Methods 0.000 claims description 38
- 229910052731 fluorine Inorganic materials 0.000 claims description 34
- 239000011737 fluorine Substances 0.000 claims description 33
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 238000009832 plasma treatment Methods 0.000 claims description 16
- 125000004429 atom Chemical group 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims 7
- 230000003197 catalytic effect Effects 0.000 claims 5
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000007796 conventional method Methods 0.000 abstract description 3
- 238000007781 pre-processing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 98
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 72
- 239000012535 impurity Substances 0.000 description 48
- 238000005530 etching Methods 0.000 description 37
- 239000002585 base Substances 0.000 description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 description 30
- 239000000463 material Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 239000011159 matrix material Substances 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 14
- 238000011276 addition treatment Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 239000007864 aqueous solution Substances 0.000 description 9
- 239000000945 filler Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 239000000565 sealant Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004040 coloring Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 239000012266 salt solution Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 241000283986 Lepus Species 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102100032566 Carbonic anhydrase-related protein 10 Human genes 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 102100032244 Dynein axonemal heavy chain 1 Human genes 0.000 description 1
- 101000867836 Homo sapiens Carbonic anhydrase-related protein 10 Proteins 0.000 description 1
- 101001016198 Homo sapiens Dynein axonemal heavy chain 1 Proteins 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- -1 polyparaphenylene vinylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000140829A JP2001326175A (ja) | 2000-05-12 | 2000-05-12 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000140829A JP2001326175A (ja) | 2000-05-12 | 2000-05-12 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001326175A true JP2001326175A (ja) | 2001-11-22 |
| JP2001326175A5 JP2001326175A5 (enExample) | 2007-07-12 |
Family
ID=18648050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000140829A Withdrawn JP2001326175A (ja) | 2000-05-12 | 2000-05-12 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001326175A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015156504A (ja) * | 2010-03-05 | 2015-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN104880885A (zh) * | 2015-04-30 | 2015-09-02 | 上方能源技术(杭州)有限公司 | 一种电致变色玻璃的驱动方式 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232059A (ja) * | 1993-02-03 | 1994-08-19 | Semiconductor Energy Lab Co Ltd | 半導体および半導体装置の作製方法 |
| JPH08236471A (ja) * | 1995-03-01 | 1996-09-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10303128A (ja) * | 1997-04-30 | 1998-11-13 | Fujitsu Ltd | 成膜方法 |
| JPH11354443A (ja) * | 1997-06-10 | 1999-12-24 | Semiconductor Energy Lab Co Ltd | 半導体薄膜および半導体装置 |
-
2000
- 2000-05-12 JP JP2000140829A patent/JP2001326175A/ja not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232059A (ja) * | 1993-02-03 | 1994-08-19 | Semiconductor Energy Lab Co Ltd | 半導体および半導体装置の作製方法 |
| JPH08236471A (ja) * | 1995-03-01 | 1996-09-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JPH10303128A (ja) * | 1997-04-30 | 1998-11-13 | Fujitsu Ltd | 成膜方法 |
| JPH11354443A (ja) * | 1997-06-10 | 1999-12-24 | Semiconductor Energy Lab Co Ltd | 半導体薄膜および半導体装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015156504A (ja) * | 2010-03-05 | 2015-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN104880885A (zh) * | 2015-04-30 | 2015-09-02 | 上方能源技术(杭州)有限公司 | 一种电致变色玻璃的驱动方式 |
| CN104880885B (zh) * | 2015-04-30 | 2017-12-26 | 浙江上方电子装备有限公司 | 一种电致变色玻璃的驱动方式 |
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