JP2001316821A5 - - Google Patents
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- Publication number
- JP2001316821A5 JP2001316821A5 JP2001050352A JP2001050352A JP2001316821A5 JP 2001316821 A5 JP2001316821 A5 JP 2001316821A5 JP 2001050352 A JP2001050352 A JP 2001050352A JP 2001050352 A JP2001050352 A JP 2001050352A JP 2001316821 A5 JP2001316821 A5 JP 2001316821A5
- Authority
- JP
- Japan
- Prior art keywords
- article
- independent
- less
- independent article
- ppmw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 235000013619 trace mineral Nutrition 0.000 description 4
- 239000011573 trace mineral Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18476600P | 2000-02-24 | 2000-02-24 | |
| US60/184766 | 2000-02-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001316821A JP2001316821A (ja) | 2001-11-16 |
| JP2001316821A5 true JP2001316821A5 (https=) | 2007-04-19 |
Family
ID=22678255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001050352A Pending JP2001316821A (ja) | 2000-02-24 | 2001-02-26 | 低抵抗率炭化珪素 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7018947B2 (https=) |
| EP (1) | EP1127955B1 (https=) |
| JP (1) | JP2001316821A (https=) |
| KR (1) | KR100760342B1 (https=) |
| DE (1) | DE60139359D1 (https=) |
| TW (1) | TW554065B (https=) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939821B2 (en) * | 2000-02-24 | 2005-09-06 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
| JP2002047066A (ja) * | 2000-08-02 | 2002-02-12 | Tokai Carbon Co Ltd | ＳｉＣ成形体およびその製造方法 |
| EP1205573A1 (en) * | 2000-11-10 | 2002-05-15 | Shipley Company LLC | Silicon carbide with high thermal conductivity |
| US8202621B2 (en) * | 2001-09-22 | 2012-06-19 | Rohm And Haas Company | Opaque low resistivity silicon carbide |
| KR100973464B1 (ko) * | 2003-02-03 | 2010-08-02 | 주식회사 티포엘 | 게비온(gebion) 철망 연속 자동 제조장치 |
| US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
| US20050123713A1 (en) * | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
| US20100297350A1 (en) * | 2003-12-05 | 2010-11-25 | David Thomas Forrest | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
| US7501765B2 (en) * | 2004-10-01 | 2009-03-10 | Illinois Tool Works Inc. | Emitter electrodes formed of chemical vapor deposition silicon carbide |
| CN100430516C (zh) * | 2005-03-18 | 2008-11-05 | 西北工业大学 | 碳/碳复合材料表面碳化硅纳米线的制备方法 |
| JP2008252045A (ja) * | 2007-03-30 | 2008-10-16 | Mitsui Eng & Shipbuild Co Ltd | プラズマ処置装置用電極 |
| US8105649B1 (en) | 2007-08-09 | 2012-01-31 | Imaging Systems Technology | Fabrication of silicon carbide shell |
| US7935618B2 (en) * | 2007-09-26 | 2011-05-03 | Micron Technology, Inc. | Sputtering-less ultra-low energy ion implantation |
| CN103723731B (zh) * | 2013-04-22 | 2015-10-21 | 太仓派欧技术咨询服务有限公司 | 一种复合式化学气相沉积碳化硅装置 |
| US9384937B2 (en) * | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
| FR3034771B1 (fr) * | 2015-04-13 | 2019-04-19 | Hutchinson | Materiaux conducteurs thermiques et/ou electriques et leur procede de preparation |
| FR3034775B1 (fr) | 2015-04-13 | 2018-09-28 | Hutchinson | Materiau pour le stockage thermique |
| JP2018035009A (ja) * | 2016-08-29 | 2018-03-08 | 京セラ株式会社 | ＳｉＣ材料およびそれを用いた半導体製造装置用部材 |
| JP6609300B2 (ja) * | 2017-12-21 | 2019-11-20 | 國家中山科學研究院 | 特定形状の炭化ケイ素の育成装置 |
| US11859309B2 (en) | 2018-06-01 | 2024-01-02 | Ds Techno Co., Ltd. | Chemical-vapor-deposition silicon carbide bulk having improved etching characteristic |
| US11319629B2 (en) | 2018-08-06 | 2022-05-03 | Advanced Silicon Carbide Materials | Method of making composite articles from silicon carbide |
| JP7155089B2 (ja) | 2019-09-27 | 2022-10-18 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体 |
| JP7239432B2 (ja) | 2019-09-27 | 2023-03-14 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体の製造方法 |
| JP7077288B2 (ja) | 2019-09-27 | 2022-05-30 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体 |
| JP2023061509A (ja) | 2021-10-20 | 2023-05-02 | 株式会社サイコックス | 多結晶炭化珪素基板の製造方法 |
| CN117120661A (zh) | 2022-03-07 | 2023-11-24 | 东海炭素株式会社 | 多晶SiC成型体及其制造方法 |
| KR102899737B1 (ko) | 2022-12-22 | 2025-12-12 | 도까이 카본 가부시끼가이샤 | 다결정 SiC 성형체 및 그의 제조 방법 |
| CN117051374A (zh) * | 2023-08-18 | 2023-11-14 | 北京亦盛精密半导体有限公司 | 一种调节cvd碳化硅中氮含量的方法 |
| CN119895074A (zh) | 2023-08-25 | 2025-04-25 | 东海炭素株式会社 | 多晶SiC成型体 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4772498A (en) | 1986-11-20 | 1988-09-20 | Air Products And Chemicals, Inc. | Silicon carbide capillaries |
| US5093039A (en) * | 1989-01-30 | 1992-03-03 | Kazunori Kijima | Highly pure sintered carbide with high electric conductivity and process of producing the same |
| US5071596A (en) | 1989-10-23 | 1991-12-10 | Cvd Incorporated | Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process |
| JPH03252307A (ja) * | 1990-02-27 | 1991-11-11 | Showa Denko Kk | 多結晶炭化珪素 |
| US5374412A (en) | 1992-07-31 | 1994-12-20 | Cvd, Inc. | Highly polishable, highly thermally conductive silicon carbide |
| CA2099788A1 (en) | 1992-07-31 | 1994-02-01 | Michael A. Pickering | Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom |
| TW337513B (en) * | 1992-11-23 | 1998-08-01 | Cvd Inc | Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof |
| US5332601A (en) * | 1992-12-10 | 1994-07-26 | The United States As Represented By The United States Department Of Energy | Method of fabricating silicon carbide coatings on graphite surfaces |
| US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
| EP0792853B1 (en) * | 1996-02-29 | 2001-04-25 | Bridgestone Corporation | Process for making a silicon carbide sintered body |
| US5683028A (en) | 1996-05-03 | 1997-11-04 | Cvd, Incorporated | Bonding of silicon carbide components |
| US6090733A (en) * | 1997-08-27 | 2000-07-18 | Bridgestone Corporation | Sintered silicon carbide and method for producing the same |
| JPH1167427A (ja) * | 1997-08-27 | 1999-03-09 | Bridgestone Corp | ヒーター部品 |
| JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
| JP4595153B2 (ja) * | 2000-02-14 | 2010-12-08 | 旭硝子株式会社 | 炭化ケイ素体およびその製造方法 |
| JP2002047066A (ja) * | 2000-08-02 | 2002-02-12 | Tokai Carbon Co Ltd | ＳｉＣ成形体およびその製造方法 |
-
2001
- 2001-02-21 US US09/790,442 patent/US7018947B2/en not_active Expired - Lifetime
- 2001-02-22 EP EP01301614A patent/EP1127955B1/en not_active Expired - Lifetime
- 2001-02-22 DE DE60139359T patent/DE60139359D1/de not_active Expired - Lifetime
- 2001-02-24 KR KR1020010009425A patent/KR100760342B1/ko not_active Expired - Lifetime
- 2001-02-26 JP JP2001050352A patent/JP2001316821A/ja active Pending
- 2001-03-20 TW TW090104247A patent/TW554065B/zh not_active IP Right Cessation
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