JP2001297316A - メモリカード及びその制御方法 - Google Patents

メモリカード及びその制御方法

Info

Publication number
JP2001297316A
JP2001297316A JP2000112995A JP2000112995A JP2001297316A JP 2001297316 A JP2001297316 A JP 2001297316A JP 2000112995 A JP2000112995 A JP 2000112995A JP 2000112995 A JP2000112995 A JP 2000112995A JP 2001297316 A JP2001297316 A JP 2001297316A
Authority
JP
Japan
Prior art keywords
memory card
write
flash memory
task
register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000112995A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001297316A5 (enExample
Inventor
Hidenori Mitani
秀徳 三谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2000112995A priority Critical patent/JP2001297316A/ja
Priority to US09/690,730 priority patent/US6633956B1/en
Publication of JP2001297316A publication Critical patent/JP2001297316A/ja
Publication of JP2001297316A5 publication Critical patent/JP2001297316A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/0292—User address space allocation, e.g. contiguous or non contiguous base addressing using tables or multilevel address translation means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2022—Flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
JP2000112995A 2000-04-14 2000-04-14 メモリカード及びその制御方法 Pending JP2001297316A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000112995A JP2001297316A (ja) 2000-04-14 2000-04-14 メモリカード及びその制御方法
US09/690,730 US6633956B1 (en) 2000-04-14 2000-10-18 Memory card with task registers storing physical addresses

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000112995A JP2001297316A (ja) 2000-04-14 2000-04-14 メモリカード及びその制御方法

Publications (2)

Publication Number Publication Date
JP2001297316A true JP2001297316A (ja) 2001-10-26
JP2001297316A5 JP2001297316A5 (enExample) 2007-03-22

Family

ID=18625048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000112995A Pending JP2001297316A (ja) 2000-04-14 2000-04-14 メモリカード及びその制御方法

Country Status (2)

Country Link
US (1) US6633956B1 (enExample)
JP (1) JP2001297316A (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003036202A (ja) * 2001-07-24 2003-02-07 Matsushita Electric Ind Co Ltd 記憶装置
WO2005057475A1 (ja) * 2003-11-28 2005-06-23 Matsushita Electric Industrial Co., Ltd. 記録装置
JP2006004245A (ja) * 2004-06-18 2006-01-05 Seiko Epson Corp 集積回路装置及び電子機器
WO2006051779A1 (ja) * 2004-11-10 2006-05-18 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶装置の制御方法、メモリコントローラ及び不揮発性記憶装置
JP2006195569A (ja) * 2005-01-11 2006-07-27 Sony Corp 記憶装置
JPWO2005029311A1 (ja) * 2003-09-18 2006-11-30 松下電器産業株式会社 半導体メモリカード、半導体メモリ制御装置及び半導体メモリ制御方法
JP2008518283A (ja) * 2004-07-28 2008-05-29 サンディスク コーポレイション 最適化された不揮発性記憶システム
JP2008536232A (ja) * 2005-04-12 2008-09-04 サンディスク アイエル リミテッド スマートカードの電力管理
KR101038146B1 (ko) 2008-05-21 2011-05-31 가부시끼가이샤 도시바 반도체 기억 장치를 갖는 메모리 시스템
JP2012043451A (ja) * 2006-01-18 2012-03-01 Apple Inc フラッシュメモリ用インターリーブポリシー
US9070426B2 (en) 2013-09-09 2015-06-30 Kabushiki Kaisha Toshiba Semiconductor memory device capable of setting an internal state of a NAND flash memory in response to a set feature command
US9411721B2 (en) 2013-11-15 2016-08-09 Sandisk Technologies Llc Detecting access sequences for data compression on non-volatile memory devices
US10365841B2 (en) 2011-12-12 2019-07-30 Sandisk Technologies Llc Non-volatile storage systems with go to sleep adaption

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
JP2003140980A (ja) * 2001-10-31 2003-05-16 Hitachi Ltd 記録装置
DE60218121T2 (de) * 2001-12-11 2007-05-31 Matsushita Electric Industrial Co. Limited, Kadoma IC-Karte und Datenverarbeitungsverfahren dafür
US7062619B2 (en) * 2002-01-31 2006-06-13 Saifun Semiconductor Ltd. Mass storage device architecture and operation
US6928527B2 (en) * 2002-01-31 2005-08-09 Saifun Semiconductors Ltd. Look ahead methods and apparatus
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US7085879B2 (en) * 2002-02-27 2006-08-01 Microsoft Corporation Dynamic data structures for tracking data stored in a flash memory device
US6901499B2 (en) * 2002-02-27 2005-05-31 Microsoft Corp. System and method for tracking data stored in a flash memory device
US7010662B2 (en) * 2002-02-27 2006-03-07 Microsoft Corporation Dynamic data structures for tracking file system free space in a flash memory device
US7533214B2 (en) * 2002-02-27 2009-05-12 Microsoft Corporation Open architecture flash driver
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7093101B2 (en) * 2002-11-21 2006-08-15 Microsoft Corporation Dynamic data structures for tracking file system free space in a flash memory device
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
CN100437458C (zh) * 2004-07-12 2008-11-26 株式会社东芝 存储器件和主机装置
KR100858756B1 (ko) * 2004-07-12 2008-09-16 가부시끼가이샤 도시바 저장 디바이스 및 호스트 장치
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
EP1686592A3 (en) 2005-01-19 2007-04-25 Saifun Semiconductors Ltd. Partial erase verify
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
WO2008127458A2 (en) 2006-12-06 2008-10-23 Fusion Multisystems, Inc. (Dba Fusion-Io) Apparatus, system, and method for a shared, front-end, distributed raid
US8489817B2 (en) 2007-12-06 2013-07-16 Fusion-Io, Inc. Apparatus, system, and method for caching data
US8706968B2 (en) * 2007-12-06 2014-04-22 Fusion-Io, Inc. Apparatus, system, and method for redundant write caching
US8443134B2 (en) * 2006-12-06 2013-05-14 Fusion-Io, Inc. Apparatus, system, and method for graceful cache device degradation
US9104599B2 (en) 2007-12-06 2015-08-11 Intelligent Intellectual Property Holdings 2 Llc Apparatus, system, and method for destaging cached data
US7895457B2 (en) * 2007-08-20 2011-02-22 Supertalent Electronics, Inc. Memory card with power saving
US7836226B2 (en) 2007-12-06 2010-11-16 Fusion-Io, Inc. Apparatus, system, and method for coordinating storage requests in a multi-processor/multi-thread environment
US9519540B2 (en) 2007-12-06 2016-12-13 Sandisk Technologies Llc Apparatus, system, and method for destaging cached data
US7590001B2 (en) 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
JP4772891B2 (ja) * 2009-06-30 2011-09-14 株式会社東芝 ホストコントローラ、コンピュータ端末およびカードアクセス方法
US9021158B2 (en) 2009-09-09 2015-04-28 SanDisk Technologies, Inc. Program suspend/resume for memory
US8289801B2 (en) * 2009-09-09 2012-10-16 Fusion-Io, Inc. Apparatus, system, and method for power reduction management in a storage device
US9223514B2 (en) 2009-09-09 2015-12-29 SanDisk Technologies, Inc. Erase suspend/resume for memory
US8972627B2 (en) 2009-09-09 2015-03-03 Fusion-Io, Inc. Apparatus, system, and method for managing operations for data storage media
US8285920B2 (en) 2010-07-09 2012-10-09 Nokia Corporation Memory device with dynamic controllable physical logical mapping table loading
US8984216B2 (en) 2010-09-09 2015-03-17 Fusion-Io, Llc Apparatus, system, and method for managing lifetime of a storage device
US9208071B2 (en) 2010-12-13 2015-12-08 SanDisk Technologies, Inc. Apparatus, system, and method for accessing memory
US9218278B2 (en) 2010-12-13 2015-12-22 SanDisk Technologies, Inc. Auto-commit memory
US10817502B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent memory management
US8527693B2 (en) 2010-12-13 2013-09-03 Fusion IO, Inc. Apparatus, system, and method for auto-commit memory
US9047178B2 (en) 2010-12-13 2015-06-02 SanDisk Technologies, Inc. Auto-commit memory synchronization
US10817421B2 (en) 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent data structures
WO2012106362A2 (en) 2011-01-31 2012-08-09 Fusion-Io, Inc. Apparatus, system, and method for managing eviction of data
US9141527B2 (en) 2011-02-25 2015-09-22 Intelligent Intellectual Property Holdings 2 Llc Managing cache pools
US9767032B2 (en) 2012-01-12 2017-09-19 Sandisk Technologies Llc Systems and methods for cache endurance
US9251086B2 (en) 2012-01-24 2016-02-02 SanDisk Technologies, Inc. Apparatus, system, and method for managing a cache
US8812744B1 (en) 2013-03-14 2014-08-19 Microsoft Corporation Assigning priorities to data for hybrid drives
US9626126B2 (en) 2013-04-24 2017-04-18 Microsoft Technology Licensing, Llc Power saving mode hybrid drive access management
US9946495B2 (en) 2013-04-25 2018-04-17 Microsoft Technology Licensing, Llc Dirty data management for hybrid drives
US9666244B2 (en) 2014-03-01 2017-05-30 Fusion-Io, Inc. Dividing a storage procedure
US9933950B2 (en) 2015-01-16 2018-04-03 Sandisk Technologies Llc Storage operation interrupt

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064399A (ja) * 1992-06-22 1994-01-14 Hitachi Ltd 半導体記憶装置
JPH06325586A (ja) * 1993-05-14 1994-11-25 Fujitsu Ltd 半導体記憶装置
JPH07281952A (ja) * 1994-04-12 1995-10-27 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH09251519A (ja) * 1996-03-14 1997-09-22 Toshiba Corp Ｉｃカード
JP2000020663A (ja) * 1998-06-29 2000-01-21 Ntt Data Corp Ｉｃ搭載カード及びカードシステム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829425A (en) * 1986-10-21 1989-05-09 Intel Corporation Memory-based interagent communication mechanism
JPH06101043B2 (ja) 1988-06-30 1994-12-12 三菱電機株式会社 マイクロコンピュータ
AU2418492A (en) * 1991-08-07 1993-03-02 Adaptec, Inc. Intelligent hardware for automatically reading and writing multiple sectors of data between a computer bus and a disk drive
JPH05120890A (ja) 1991-10-25 1993-05-18 Hitachi Maxell Ltd 情報媒体
JP3110866B2 (ja) * 1992-06-01 2000-11-20 株式会社東芝 マイクロプロセッサ
US6041396A (en) * 1996-03-14 2000-03-21 Advanced Micro Devices, Inc. Segment descriptor cache addressed by part of the physical address of the desired descriptor
GB9614551D0 (en) * 1996-07-11 1996-09-04 Memory Corp Plc Memory system
US6263412B1 (en) * 1998-06-24 2001-07-17 Phoenix Technologies Ltd. Method and apparatus for RAM emulation using a processor register set
JP2000173289A (ja) * 1998-12-10 2000-06-23 Toshiba Corp エラー訂正可能なフラッシュメモリシステム
US6442656B1 (en) * 1999-08-18 2002-08-27 Ati Technologies Srl Method and apparatus for interfacing memory with a bus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064399A (ja) * 1992-06-22 1994-01-14 Hitachi Ltd 半導体記憶装置
JPH06325586A (ja) * 1993-05-14 1994-11-25 Fujitsu Ltd 半導体記憶装置
JPH07281952A (ja) * 1994-04-12 1995-10-27 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH09251519A (ja) * 1996-03-14 1997-09-22 Toshiba Corp Ｉｃカード
JP2000020663A (ja) * 1998-06-29 2000-01-21 Ntt Data Corp Ｉｃ搭載カード及びカードシステム

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003036202A (ja) * 2001-07-24 2003-02-07 Matsushita Electric Ind Co Ltd 記憶装置
JPWO2005029311A1 (ja) * 2003-09-18 2006-11-30 松下電器産業株式会社 半導体メモリカード、半導体メモリ制御装置及び半導体メモリ制御方法
US7512816B2 (en) 2003-11-28 2009-03-31 Panasonic Corporation Recording apparatus receiving current supply from an accessing apparatus
WO2005057475A1 (ja) * 2003-11-28 2005-06-23 Matsushita Electric Industrial Co., Ltd. 記録装置
JP2006004245A (ja) * 2004-06-18 2006-01-05 Seiko Epson Corp 集積回路装置及び電子機器
US8292177B2 (en) 2004-07-28 2012-10-23 Sandisk Technologies Inc. Optimized non-volatile storage systems
JP2008518283A (ja) * 2004-07-28 2008-05-29 サンディスク コーポレイション 最適化された不揮発性記憶システム
WO2006051779A1 (ja) * 2004-11-10 2006-05-18 Matsushita Electric Industrial Co., Ltd. 不揮発性記憶装置の制御方法、メモリコントローラ及び不揮発性記憶装置
JP2006195569A (ja) * 2005-01-11 2006-07-27 Sony Corp 記憶装置
KR101256664B1 (ko) 2005-01-11 2013-04-19 소니 주식회사 기억 장치
JP2008536232A (ja) * 2005-04-12 2008-09-04 サンディスク アイエル リミテッド スマートカードの電力管理
US8511558B2 (en) 2005-04-12 2013-08-20 Sandisk Il Ltd. Smartcard power management
JP4898784B2 (ja) * 2005-04-12 2012-03-21 サンディスク アイエル リミテッド スマートカードの電力管理
JP2012043451A (ja) * 2006-01-18 2012-03-01 Apple Inc フラッシュメモリ用インターリーブポリシー
KR101038146B1 (ko) 2008-05-21 2011-05-31 가부시끼가이샤 도시바 반도체 기억 장치를 갖는 메모리 시스템
US10365841B2 (en) 2011-12-12 2019-07-30 Sandisk Technologies Llc Non-volatile storage systems with go to sleep adaption
US11157182B2 (en) 2011-12-12 2021-10-26 Sandisk Technologies Llc Storage systems with go to sleep adaption
US12061805B2 (en) 2011-12-12 2024-08-13 Sandisk Technologies Llc Systems and methods for dynamically reducing access time of storage device system based on pattern recognition
US9070426B2 (en) 2013-09-09 2015-06-30 Kabushiki Kaisha Toshiba Semiconductor memory device capable of setting an internal state of a NAND flash memory in response to a set feature command
US9411721B2 (en) 2013-11-15 2016-08-09 Sandisk Technologies Llc Detecting access sequences for data compression on non-volatile memory devices

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