JP2001210761A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2001210761A
JP2001210761A JP2000014809A JP2000014809A JP2001210761A JP 2001210761 A JP2001210761 A JP 2001210761A JP 2000014809 A JP2000014809 A JP 2000014809A JP 2000014809 A JP2000014809 A JP 2000014809A JP 2001210761 A JP2001210761 A JP 2001210761A
Authority
JP
Japan
Prior art keywords
wiring board
wiring
heat
resin body
wiring pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000014809A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001210761A5 (https=
Inventor
Hiroshi Murayama
啓 村山
Mitsutoshi Azuma
光敏 東
Hideaki Sakaguchi
秀明 坂口
Hiroko Koike
博子 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2000014809A priority Critical patent/JP2001210761A/ja
Priority to US09/760,396 priority patent/US6713863B2/en
Priority to DE60140093T priority patent/DE60140093D1/de
Priority to KR1020010002822A priority patent/KR20010076329A/ko
Priority to EP01300405A priority patent/EP1120830B1/en
Publication of JP2001210761A publication Critical patent/JP2001210761A/ja
Priority to US10/777,232 priority patent/US6864120B2/en
Publication of JP2001210761A5 publication Critical patent/JP2001210761A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/257—Arrangements for cooling characterised by their materials having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2000014809A 2000-01-24 2000-01-24 半導体装置及びその製造方法 Pending JP2001210761A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000014809A JP2001210761A (ja) 2000-01-24 2000-01-24 半導体装置及びその製造方法
US09/760,396 US6713863B2 (en) 2000-01-24 2001-01-12 Semiconductor device having a carbon fiber reinforced resin as a heat radiation plate having a concave portion
DE60140093T DE60140093D1 (de) 2000-01-24 2001-01-18 Halbleiter mit kohlenfaserverstärkter Harz-Kühlplatte mit konkavem Teil
KR1020010002822A KR20010076329A (ko) 2000-01-24 2001-01-18 탄소섬유가 보강된 수지체를 오목부가 있는 방열판으로서구비하는 반도체 장치
EP01300405A EP1120830B1 (en) 2000-01-24 2001-01-18 Semiconductor device having a carbon fiber reinforced resin as a heat radiation plate with a concave portion
US10/777,232 US6864120B2 (en) 2000-01-24 2004-02-12 Semiconductor device having a carbon fiber reinforced resin as a heat radiation plate having a concave portion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000014809A JP2001210761A (ja) 2000-01-24 2000-01-24 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001210761A true JP2001210761A (ja) 2001-08-03
JP2001210761A5 JP2001210761A5 (https=) 2007-01-18

Family

ID=18542206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000014809A Pending JP2001210761A (ja) 2000-01-24 2000-01-24 半導体装置及びその製造方法

Country Status (5)

Country Link
US (2) US6713863B2 (https=)
EP (1) EP1120830B1 (https=)
JP (1) JP2001210761A (https=)
KR (1) KR20010076329A (https=)
DE (1) DE60140093D1 (https=)

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US7253515B2 (en) 2005-08-01 2007-08-07 Nec Electronics Corporation Semiconductor package featuring metal lid member
US7525804B2 (en) 2004-02-18 2009-04-28 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
US7554191B2 (en) 2006-01-05 2009-06-30 Nec Electronics Corporation Semiconductor device having a heatsink plate with bored portions
JP2012094594A (ja) * 2010-10-25 2012-05-17 Toshiyuki Arai 放熱構造
JP2013118260A (ja) * 2011-12-02 2013-06-13 Nagase Chemtex Corp 中空構造電子部品
JP2013182974A (ja) * 2012-03-01 2013-09-12 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法
US9059143B2 (en) 2010-07-28 2015-06-16 J-Devices Corporation Semiconductor device
CN115181505A (zh) * 2022-07-12 2022-10-14 东莞市兆科电子材料科技有限公司 导热垫片及其制备方法
WO2025094923A1 (ja) * 2023-11-02 2025-05-08 ローム株式会社 半導体装置

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JP3446826B2 (ja) * 2000-04-06 2003-09-16 沖電気工業株式会社 半導体装置及びその製造方法
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DE10215654A1 (de) * 2002-04-09 2003-11-06 Infineon Technologies Ag Elektronisches Bauteil mit mindestens einem Halbleiterchip und Flip-Chip-Kontakten sowie Verfahren zu seiner Herstellung
JP2003309228A (ja) * 2002-04-18 2003-10-31 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US6750552B1 (en) * 2002-12-18 2004-06-15 Netlogic Microsystems, Inc. Integrated circuit package with solder bumps
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JP3786103B2 (ja) * 2003-05-02 2006-06-14 セイコーエプソン株式会社 半導体装置、電子デバイス、電子機器および半導体装置の製造方法
US6821816B1 (en) * 2003-06-13 2004-11-23 Delphi Technologies, Inc. Relaxed tolerance flip chip assembly
US6875636B2 (en) * 2003-07-14 2005-04-05 Delphi Technologies, Inc. Wafer applied thermally conductive interposer
TWI376756B (en) * 2003-07-30 2012-11-11 Taiwan Semiconductor Mfg Ground arch for wirebond ball grid arrays
US7012326B1 (en) 2003-08-25 2006-03-14 Xilinx, Inc. Lid and method of employing a lid on an integrated circuit
JP3929966B2 (ja) * 2003-11-25 2007-06-13 新光電気工業株式会社 半導体装置及びその製造方法
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TW200636954A (en) * 2005-04-15 2006-10-16 Siliconware Precision Industries Co Ltd Thermally enhanced semiconductor package and fabrication method thereof
JP4208863B2 (ja) * 2005-06-30 2009-01-14 富士通マイクロエレクトロニクス株式会社 半導体装置およびその製造方法
KR100824250B1 (ko) * 2005-08-01 2008-04-24 엔이씨 일렉트로닉스 가부시키가이샤 금속 리드 부재를 피쳐링하는 반도체 패키지
KR100765478B1 (ko) 2005-08-12 2007-10-09 삼성전자주식회사 구멍이 형성된 테이프 배선기판과, 그를 이용한 테이프패키지 및 평판 표시 장치
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US7416923B2 (en) * 2005-12-09 2008-08-26 International Business Machines Corporation Underfill film having thermally conductive sheet
US20080001277A1 (en) * 2006-06-30 2008-01-03 Tsrong Yi Wen Semiconductor package system and method of improving heat dissipation of a semiconductor package
JP2008153305A (ja) * 2006-12-14 2008-07-03 Nec Electronics Corp 半導体装置
TWI379363B (en) * 2007-04-24 2012-12-11 United Test & Assembly Ct Lt Bump on via-packaging and methodologies
US7906857B1 (en) 2008-03-13 2011-03-15 Xilinx, Inc. Molded integrated circuit package and method of forming a molded integrated circuit package
JP2009290118A (ja) * 2008-05-30 2009-12-10 Toshiba Corp 電子機器
US20100052156A1 (en) * 2008-08-27 2010-03-04 Advanced Semiconductor Engineering, Inc. Chip scale package structure and fabrication method thereof
US8097944B2 (en) * 2009-04-30 2012-01-17 Infineon Technologies Ag Semiconductor device
US8362607B2 (en) * 2009-06-03 2013-01-29 Honeywell International Inc. Integrated circuit package including a thermally and electrically conductive package lid
US8362609B1 (en) 2009-10-27 2013-01-29 Xilinx, Inc. Integrated circuit package and method of forming an integrated circuit package
FR2957192B1 (fr) * 2010-03-03 2013-10-25 Hispano Suiza Sa Module electronique de puissance pour un actionneur pour aeronef
JP5572890B2 (ja) * 2010-06-08 2014-08-20 ミヨシ電子株式会社 半導体モジュールおよび半導体装置
US8810028B1 (en) 2010-06-30 2014-08-19 Xilinx, Inc. Integrated circuit packaging devices and methods
US9072199B2 (en) 2010-12-27 2015-06-30 Src, Inc. Thermal transfer component, apparatus and method including thermally conductive frame penetrated by thermally conductive plug
JP2012164846A (ja) * 2011-02-08 2012-08-30 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、及び表示装置
US10109591B1 (en) * 2011-06-27 2018-10-23 Amkor Technology, Inc. Integrated shield package and method
JP6008582B2 (ja) * 2012-05-28 2016-10-19 新光電気工業株式会社 半導体パッケージ、放熱板及びその製造方法
KR101989516B1 (ko) 2012-09-24 2019-06-14 삼성전자주식회사 반도체 패키지
CN104576568A (zh) * 2013-10-15 2015-04-29 日月光半导体制造股份有限公司 半导体封装件及其制造方法
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KR102186203B1 (ko) 2014-01-23 2020-12-04 삼성전자주식회사 패키지 온 패키지 장치 및 이의 제조 방법
JP2016092300A (ja) * 2014-11-07 2016-05-23 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
FR3053526B1 (fr) 2016-07-01 2018-11-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication collective de dispositifs electroniques et dispositif electronique
FR3079068B1 (fr) * 2018-03-13 2023-05-26 St Microelectronics Grenoble 2 Dispositifs electroniques et procedes de fabrication
JP7265321B2 (ja) * 2018-06-21 2023-04-26 デクセリアルズ株式会社 半導体装置及び半導体装置の製造方法
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US7525804B2 (en) 2004-02-18 2009-04-28 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
US7253515B2 (en) 2005-08-01 2007-08-07 Nec Electronics Corporation Semiconductor package featuring metal lid member
CN100456456C (zh) * 2005-08-01 2009-01-28 恩益禧电子股份有限公司 以金属盖部件为特征的半导体封装
US7554191B2 (en) 2006-01-05 2009-06-30 Nec Electronics Corporation Semiconductor device having a heatsink plate with bored portions
US9059143B2 (en) 2010-07-28 2015-06-16 J-Devices Corporation Semiconductor device
JP2012094594A (ja) * 2010-10-25 2012-05-17 Toshiyuki Arai 放熱構造
JP2013118260A (ja) * 2011-12-02 2013-06-13 Nagase Chemtex Corp 中空構造電子部品
JP2013182974A (ja) * 2012-03-01 2013-09-12 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法
CN115181505A (zh) * 2022-07-12 2022-10-14 东莞市兆科电子材料科技有限公司 导热垫片及其制备方法
CN115181505B (zh) * 2022-07-12 2024-02-27 东莞市兆科电子材料科技有限公司 导热垫片及其制备方法
WO2025094923A1 (ja) * 2023-11-02 2025-05-08 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
US6713863B2 (en) 2004-03-30
EP1120830A3 (en) 2002-05-22
US20010009302A1 (en) 2001-07-26
US6864120B2 (en) 2005-03-08
EP1120830B1 (en) 2009-10-07
DE60140093D1 (de) 2009-11-19
KR20010076329A (ko) 2001-08-11
US20040166609A1 (en) 2004-08-26
EP1120830A2 (en) 2001-08-01

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