JP2001148381A - 絶縁膜の形成方法及びその装置 - Google Patents

絶縁膜の形成方法及びその装置

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Publication number
JP2001148381A
JP2001148381A JP2000271569A JP2000271569A JP2001148381A JP 2001148381 A JP2001148381 A JP 2001148381A JP 2000271569 A JP2000271569 A JP 2000271569A JP 2000271569 A JP2000271569 A JP 2000271569A JP 2001148381 A JP2001148381 A JP 2001148381A
Authority
JP
Japan
Prior art keywords
gas
reaction vessel
insulating film
nitrogen
supplying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000271569A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001148381A5 (https=
Inventor
Motoshi Nakamura
源志 中村
Yoshihide Tada
吉秀 多田
Masayuki Imai
正幸 今井
Asami Suemura
麻美 末村
Shingo Hishiya
晋吾 菱屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000271569A priority Critical patent/JP2001148381A/ja
Publication of JP2001148381A publication Critical patent/JP2001148381A/ja
Publication of JP2001148381A5 publication Critical patent/JP2001148381A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
JP2000271569A 1999-09-07 2000-09-07 絶縁膜の形成方法及びその装置 Pending JP2001148381A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000271569A JP2001148381A (ja) 1999-09-07 2000-09-07 絶縁膜の形成方法及びその装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25334899 1999-09-07
JP11-253348 1999-09-07
JP2000271569A JP2001148381A (ja) 1999-09-07 2000-09-07 絶縁膜の形成方法及びその装置

Publications (2)

Publication Number Publication Date
JP2001148381A true JP2001148381A (ja) 2001-05-29
JP2001148381A5 JP2001148381A5 (https=) 2007-12-20

Family

ID=26541154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000271569A Pending JP2001148381A (ja) 1999-09-07 2000-09-07 絶縁膜の形成方法及びその装置

Country Status (1)

Country Link
JP (1) JP2001148381A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203730A (ja) * 2003-12-18 2005-07-28 Seiko Epson Corp 絶縁膜、半導体素子、電子デバイスおよび電子機器
US7517751B2 (en) 2001-12-18 2009-04-14 Tokyo Electron Limited Substrate treating method
JP2010098322A (ja) * 2004-02-10 2010-04-30 Seiko Epson Corp 絶縁膜、半導体素子、電子デバイスおよび電子機器
US8168482B2 (en) 2004-02-10 2012-05-01 Seiko Epson Corporation Semiconductor device, an electronic device and an electronic apparatus
JP2015103551A (ja) * 2013-11-21 2015-06-04 旭化成エレクトロニクス株式会社 半導体装置及びその製造方法
US10290492B2 (en) 2016-05-31 2019-05-14 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
WO2020145084A1 (ja) * 2019-01-11 2020-07-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7645659B2 (ja) 2020-03-03 2025-03-14 アプライド マテリアルズ インコーポレイテッド 炭素系膜の気相堆積

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517751B2 (en) 2001-12-18 2009-04-14 Tokyo Electron Limited Substrate treating method
JP2005203730A (ja) * 2003-12-18 2005-07-28 Seiko Epson Corp 絶縁膜、半導体素子、電子デバイスおよび電子機器
US7696047B2 (en) 2003-12-18 2010-04-13 Seiko Epson Corporation Method for evaluating a gate insulation film characteristic for use in a semiconductor device
JP2010098322A (ja) * 2004-02-10 2010-04-30 Seiko Epson Corp 絶縁膜、半導体素子、電子デバイスおよび電子機器
US8168482B2 (en) 2004-02-10 2012-05-01 Seiko Epson Corporation Semiconductor device, an electronic device and an electronic apparatus
US8395225B2 (en) 2004-02-10 2013-03-12 Seiko Epson Corporation Semiconductor device, an electronic device and an electronic apparatus
JP2015103551A (ja) * 2013-11-21 2015-06-04 旭化成エレクトロニクス株式会社 半導体装置及びその製造方法
US10290492B2 (en) 2016-05-31 2019-05-14 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
WO2020145084A1 (ja) * 2019-01-11 2020-07-16 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN113169069A (zh) * 2019-01-11 2021-07-23 株式会社国际电气 半导体器件的制造方法、衬底处理装置及程序
JPWO2020145084A1 (ja) * 2019-01-11 2021-10-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP7170750B2 (ja) 2019-01-11 2022-11-14 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置およびプログラム
CN113169069B (zh) * 2019-01-11 2024-03-22 株式会社国际电气 半导体器件的制造方法、衬底处理方法、衬底处理装置及记录介质
US12359314B2 (en) 2019-01-11 2025-07-15 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
JP7645659B2 (ja) 2020-03-03 2025-03-14 アプライド マテリアルズ インコーポレイテッド 炭素系膜の気相堆積

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