JP2001148381A - 絶縁膜の形成方法及びその装置 - Google Patents
絶縁膜の形成方法及びその装置Info
- Publication number
- JP2001148381A JP2001148381A JP2000271569A JP2000271569A JP2001148381A JP 2001148381 A JP2001148381 A JP 2001148381A JP 2000271569 A JP2000271569 A JP 2000271569A JP 2000271569 A JP2000271569 A JP 2000271569A JP 2001148381 A JP2001148381 A JP 2001148381A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction vessel
- insulating film
- nitrogen
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000012545 processing Methods 0.000 claims abstract description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 21
- 230000001590 oxidative effect Effects 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 76
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 70
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 61
- 238000006243 chemical reaction Methods 0.000 claims description 56
- 238000000137 annealing Methods 0.000 claims description 38
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 239000011261 inert gas Substances 0.000 claims description 8
- 238000009279 wet oxidation reaction Methods 0.000 abstract description 5
- 238000009825 accumulation Methods 0.000 abstract description 3
- 108010053481 Antifreeze Proteins Proteins 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 26
- 229910052757 nitrogen Inorganic materials 0.000 description 19
- 230000003647 oxidation Effects 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 16
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 13
- 229910001882 dioxygen Inorganic materials 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 10
- 238000002485 combustion reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 235000013842 nitrous oxide Nutrition 0.000 description 4
- 235000001630 Pyrus pyrifolia var culta Nutrition 0.000 description 3
- 240000002609 Pyrus pyrifolia var. culta Species 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 229960001730 nitrous oxide Drugs 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000012733 comparative method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000271569A JP2001148381A (ja) | 1999-09-07 | 2000-09-07 | 絶縁膜の形成方法及びその装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25334899 | 1999-09-07 | ||
| JP11-253348 | 1999-09-07 | ||
| JP2000271569A JP2001148381A (ja) | 1999-09-07 | 2000-09-07 | 絶縁膜の形成方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001148381A true JP2001148381A (ja) | 2001-05-29 |
| JP2001148381A5 JP2001148381A5 (enExample) | 2007-12-20 |
Family
ID=26541154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000271569A Pending JP2001148381A (ja) | 1999-09-07 | 2000-09-07 | 絶縁膜の形成方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001148381A (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005203730A (ja) * | 2003-12-18 | 2005-07-28 | Seiko Epson Corp | 絶縁膜、半導体素子、電子デバイスおよび電子機器 |
| US7517751B2 (en) | 2001-12-18 | 2009-04-14 | Tokyo Electron Limited | Substrate treating method |
| JP2010098322A (ja) * | 2004-02-10 | 2010-04-30 | Seiko Epson Corp | 絶縁膜、半導体素子、電子デバイスおよび電子機器 |
| US8168482B2 (en) | 2004-02-10 | 2012-05-01 | Seiko Epson Corporation | Semiconductor device, an electronic device and an electronic apparatus |
| JP2015103551A (ja) * | 2013-11-21 | 2015-06-04 | 旭化成エレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| US10290492B2 (en) | 2016-05-31 | 2019-05-14 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| WO2020145084A1 (ja) * | 2019-01-11 | 2020-07-16 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP7645659B2 (ja) | 2020-03-03 | 2025-03-14 | アプライド マテリアルズ インコーポレイテッド | 炭素系膜の気相堆積 |
-
2000
- 2000-09-07 JP JP2000271569A patent/JP2001148381A/ja active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7517751B2 (en) | 2001-12-18 | 2009-04-14 | Tokyo Electron Limited | Substrate treating method |
| JP2005203730A (ja) * | 2003-12-18 | 2005-07-28 | Seiko Epson Corp | 絶縁膜、半導体素子、電子デバイスおよび電子機器 |
| US7696047B2 (en) | 2003-12-18 | 2010-04-13 | Seiko Epson Corporation | Method for evaluating a gate insulation film characteristic for use in a semiconductor device |
| JP2010098322A (ja) * | 2004-02-10 | 2010-04-30 | Seiko Epson Corp | 絶縁膜、半導体素子、電子デバイスおよび電子機器 |
| US8168482B2 (en) | 2004-02-10 | 2012-05-01 | Seiko Epson Corporation | Semiconductor device, an electronic device and an electronic apparatus |
| US8395225B2 (en) | 2004-02-10 | 2013-03-12 | Seiko Epson Corporation | Semiconductor device, an electronic device and an electronic apparatus |
| JP2015103551A (ja) * | 2013-11-21 | 2015-06-04 | 旭化成エレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| US10290492B2 (en) | 2016-05-31 | 2019-05-14 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| WO2020145084A1 (ja) * | 2019-01-11 | 2020-07-16 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| CN113169069A (zh) * | 2019-01-11 | 2021-07-23 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理装置及程序 |
| JPWO2020145084A1 (ja) * | 2019-01-11 | 2021-10-07 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| JP7170750B2 (ja) | 2019-01-11 | 2022-11-14 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置およびプログラム |
| CN113169069B (zh) * | 2019-01-11 | 2024-03-22 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理方法、衬底处理装置及记录介质 |
| US12359314B2 (en) | 2019-01-11 | 2025-07-15 | Kokusai Electric Corporation | Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium |
| JP7645659B2 (ja) | 2020-03-03 | 2025-03-14 | アプライド マテリアルズ インコーポレイテッド | 炭素系膜の気相堆積 |
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