JP2001068788A - 埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュール - Google Patents
埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュールInfo
- Publication number
- JP2001068788A JP2001068788A JP24062599A JP24062599A JP2001068788A JP 2001068788 A JP2001068788 A JP 2001068788A JP 24062599 A JP24062599 A JP 24062599A JP 24062599 A JP24062599 A JP 24062599A JP 2001068788 A JP2001068788 A JP 2001068788A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buried
- semiconductor laser
- laser device
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 164
- 125000005842 heteroatom Chemical group 0.000 title claims abstract description 70
- 230000003287 optical effect Effects 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000010410 layer Substances 0.000 claims abstract description 556
- 239000011241 protective layer Substances 0.000 claims abstract description 87
- 239000000203 mixture Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000005253 cladding Methods 0.000 claims description 139
- 239000000463 material Substances 0.000 claims description 66
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 52
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 38
- 238000004381 surface treatment Methods 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000243 solution Substances 0.000 claims description 29
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 27
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 16
- 230000010355 oscillation Effects 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 12
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 claims description 11
- 230000031700 light absorption Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 49
- 230000003647 oxidation Effects 0.000 abstract description 48
- 238000004140 cleaning Methods 0.000 abstract description 14
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 17
- 230000006866 deterioration Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 238000010030 laminating Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 230000002411 adverse Effects 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24062599A JP2001068788A (ja) | 1999-08-26 | 1999-08-26 | 埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュール |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24062599A JP2001068788A (ja) | 1999-08-26 | 1999-08-26 | 埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュール |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001068788A true JP2001068788A (ja) | 2001-03-16 |
| JP2001068788A5 JP2001068788A5 (enrdf_load_stackoverflow) | 2006-01-05 |
Family
ID=17062289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24062599A Pending JP2001068788A (ja) | 1999-08-26 | 1999-08-26 | 埋め込みヘテロ型半導体レーザ素子およびその製造方法並びにそれを用いた光モジュール |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001068788A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286809A (ja) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 光半導体デバイス及びその製造方法 |
| JP2008053539A (ja) * | 2006-08-25 | 2008-03-06 | Sumitomo Electric Ind Ltd | 半導体光素子 |
| CN114930658A (zh) * | 2020-01-22 | 2022-08-19 | 三菱电机株式会社 | 半导体装置以及半导体装置的制造方法 |
-
1999
- 1999-08-26 JP JP24062599A patent/JP2001068788A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286809A (ja) * | 2005-03-31 | 2006-10-19 | Fujitsu Ltd | 光半導体デバイス及びその製造方法 |
| JP2008053539A (ja) * | 2006-08-25 | 2008-03-06 | Sumitomo Electric Ind Ltd | 半導体光素子 |
| CN114930658A (zh) * | 2020-01-22 | 2022-08-19 | 三菱电机株式会社 | 半导体装置以及半导体装置的制造方法 |
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