JP2001067867A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JP2001067867A
JP2001067867A JP24505399A JP24505399A JP2001067867A JP 2001067867 A JP2001067867 A JP 2001067867A JP 24505399 A JP24505399 A JP 24505399A JP 24505399 A JP24505399 A JP 24505399A JP 2001067867 A JP2001067867 A JP 2001067867A
Authority
JP
Japan
Prior art keywords
circuit
command
signal
output
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24505399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001067867A5 (https=
Inventor
Takashi Kono
隆司 河野
Kiyohiro Furuya
清広 古谷
Takeshi Hamamoto
武史 濱本
Katsukichi Mitsui
克吉 光井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24505399A priority Critical patent/JP2001067867A/ja
Priority to US09/539,893 priority patent/US6262931B1/en
Publication of JP2001067867A publication Critical patent/JP2001067867A/ja
Publication of JP2001067867A5 publication Critical patent/JP2001067867A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/18Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/14Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
JP24505399A 1999-08-31 1999-08-31 半導体記憶装置 Pending JP2001067867A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP24505399A JP2001067867A (ja) 1999-08-31 1999-08-31 半導体記憶装置
US09/539,893 US6262931B1 (en) 1999-08-31 2000-03-31 Semiconductor memory device having voltage down convertor reducing current consumption

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24505399A JP2001067867A (ja) 1999-08-31 1999-08-31 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2001067867A true JP2001067867A (ja) 2001-03-16
JP2001067867A5 JP2001067867A5 (https=) 2006-08-10

Family

ID=17127890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24505399A Pending JP2001067867A (ja) 1999-08-31 1999-08-31 半導体記憶装置

Country Status (2)

Country Link
US (1) US6262931B1 (https=)
JP (1) JP2001067867A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134567A (ja) * 2004-11-05 2006-05-25 Samsung Electronics Co Ltd 電圧発生回路及びこの回路を備えた半導体メモリ装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3535788B2 (ja) * 1999-12-27 2004-06-07 Necエレクトロニクス株式会社 半導体記憶装置
JP3874247B2 (ja) * 2001-12-25 2007-01-31 株式会社ルネサステクノロジ 半導体集積回路装置
KR100532456B1 (ko) * 2003-07-30 2005-11-30 삼성전자주식회사 메모리 컨트롤러 및 상기 메모리 컨트롤러를 구비하는반도체 장치
JP5261888B2 (ja) * 2006-05-18 2013-08-14 富士通セミコンダクター株式会社 半導体記憶装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07113863B2 (ja) 1985-06-29 1995-12-06 株式会社東芝 半導体集積回路装置
JP2945508B2 (ja) 1991-06-20 1999-09-06 三菱電機株式会社 半導体装置
JPH09167488A (ja) * 1995-12-18 1997-06-24 Mitsubishi Electric Corp 半導体記憶装置
JPH11250665A (ja) * 1998-03-04 1999-09-17 Mitsubishi Electric Corp 半導体集積回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006134567A (ja) * 2004-11-05 2006-05-25 Samsung Electronics Co Ltd 電圧発生回路及びこの回路を備えた半導体メモリ装置

Also Published As

Publication number Publication date
US6262931B1 (en) 2001-07-17

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