JP2001035994A - 半導体集積回路装置およびシステム基板 - Google Patents
半導体集積回路装置およびシステム基板Info
- Publication number
- JP2001035994A JP2001035994A JP11201965A JP20196599A JP2001035994A JP 2001035994 A JP2001035994 A JP 2001035994A JP 11201965 A JP11201965 A JP 11201965A JP 20196599 A JP20196599 A JP 20196599A JP 2001035994 A JP2001035994 A JP 2001035994A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- semiconductor integrated
- integrated circuit
- well
- printed wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 104
- 239000000853 adhesive Substances 0.000 claims abstract description 24
- 230000001070 adhesive effect Effects 0.000 claims abstract description 24
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 230000006870 function Effects 0.000 claims description 11
- 239000002344 surface layer Substances 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 230000003068 static effect Effects 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 230000006386 memory function Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 102100039435 C-X-C motif chemokine 17 Human genes 0.000 description 2
- 101000889048 Homo sapiens C-X-C motif chemokine 17 Proteins 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 102100030393 G-patch domain and KOW motifs-containing protein Human genes 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11201965A JP2001035994A (ja) | 1999-07-15 | 1999-07-15 | 半導体集積回路装置およびシステム基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11201965A JP2001035994A (ja) | 1999-07-15 | 1999-07-15 | 半導体集積回路装置およびシステム基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001035994A true JP2001035994A (ja) | 2001-02-09 |
| JP2001035994A5 JP2001035994A5 (enrdf_load_stackoverflow) | 2005-06-23 |
Family
ID=16449708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11201965A Pending JP2001035994A (ja) | 1999-07-15 | 1999-07-15 | 半導体集積回路装置およびシステム基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001035994A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045899B2 (en) | 2002-10-15 | 2006-05-16 | Oki Electric Industry Co., Ltd. | Semiconductor device and fabrication method of the same |
| KR100744979B1 (ko) * | 2005-05-20 | 2007-08-02 | 엔이씨 일렉트로닉스 가부시키가이샤 | 아날로그 반도체 칩 및 디지털 반도체 칩이 순서대로적층된 ｓｉｐ 타입 패키지, 및 그 제조 방법 |
| JP2010002878A (ja) * | 2008-06-20 | 2010-01-07 | Renei Kagi Kofun Yugenkoshi | ソース・ドライバおよび液晶ディスプレイ |
| US7656030B2 (en) | 2006-01-11 | 2010-02-02 | Renesas Technology Corp. | Semiconductor device |
| EP2720267A1 (en) | 2012-10-15 | 2014-04-16 | J-Devices Corporation | Semiconductor storage device and method for producing the same |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737867A (en) * | 1980-08-18 | 1982-03-02 | Mitsubishi Electric Corp | Semiconductor device |
| JPH05109978A (ja) * | 1991-10-17 | 1993-04-30 | Fujitsu Ltd | 半導体装置 |
| JPH07273275A (ja) * | 1994-03-29 | 1995-10-20 | Toshiba Corp | 半導体装置 |
| JPH09260441A (ja) * | 1996-03-26 | 1997-10-03 | Mitsubishi Electric Corp | 半導体装置 |
| JPH1070243A (ja) * | 1996-05-30 | 1998-03-10 | Toshiba Corp | 半導体集積回路装置およびその検査方法およびその検査装置 |
| JPH10256483A (ja) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | Ｍｏｓ型半導体集積回路 |
| JPH113969A (ja) * | 1997-06-13 | 1999-01-06 | Matsushita Electric Ind Co Ltd | チップ部品が積層された基板部品 |
| JPH11121686A (ja) * | 1997-10-21 | 1999-04-30 | Rohm Co Ltd | 多層チップの組み立て方法 |
| JPH11135714A (ja) * | 1997-10-29 | 1999-05-21 | Rohm Co Ltd | 半導体装置 |
-
1999
- 1999-07-15 JP JP11201965A patent/JP2001035994A/ja active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737867A (en) * | 1980-08-18 | 1982-03-02 | Mitsubishi Electric Corp | Semiconductor device |
| JPH05109978A (ja) * | 1991-10-17 | 1993-04-30 | Fujitsu Ltd | 半導体装置 |
| JPH07273275A (ja) * | 1994-03-29 | 1995-10-20 | Toshiba Corp | 半導体装置 |
| JPH09260441A (ja) * | 1996-03-26 | 1997-10-03 | Mitsubishi Electric Corp | 半導体装置 |
| JPH1070243A (ja) * | 1996-05-30 | 1998-03-10 | Toshiba Corp | 半導体集積回路装置およびその検査方法およびその検査装置 |
| JPH10256483A (ja) * | 1997-03-11 | 1998-09-25 | Toshiba Corp | Ｍｏｓ型半導体集積回路 |
| JPH113969A (ja) * | 1997-06-13 | 1999-01-06 | Matsushita Electric Ind Co Ltd | チップ部品が積層された基板部品 |
| JPH11121686A (ja) * | 1997-10-21 | 1999-04-30 | Rohm Co Ltd | 多層チップの組み立て方法 |
| JPH11135714A (ja) * | 1997-10-29 | 1999-05-21 | Rohm Co Ltd | 半導体装置 |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045899B2 (en) | 2002-10-15 | 2006-05-16 | Oki Electric Industry Co., Ltd. | Semiconductor device and fabrication method of the same |
| KR100744979B1 (ko) * | 2005-05-20 | 2007-08-02 | 엔이씨 일렉트로닉스 가부시키가이샤 | 아날로그 반도체 칩 및 디지털 반도체 칩이 순서대로적층된 ｓｉｐ 타입 패키지, 및 그 제조 방법 |
| US7656030B2 (en) | 2006-01-11 | 2010-02-02 | Renesas Technology Corp. | Semiconductor device |
| JP2010002878A (ja) * | 2008-06-20 | 2010-01-07 | Renei Kagi Kofun Yugenkoshi | ソース・ドライバおよび液晶ディスプレイ |
| EP2720267A1 (en) | 2012-10-15 | 2014-04-16 | J-Devices Corporation | Semiconductor storage device and method for producing the same |
| US8897051B2 (en) | 2012-10-15 | 2014-11-25 | J-Devices Corporation | Semiconductor storage device and method for producing the same |
| EP3855492A2 (en) | 2012-10-15 | 2021-07-28 | J-Devices Corporation | Semiconductor storage device and method for producing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
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| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
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| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
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