JP2001024028A - ワイヤボンディング接続構造 - Google Patents

ワイヤボンディング接続構造

Info

Publication number
JP2001024028A
JP2001024028A JP11192452A JP19245299A JP2001024028A JP 2001024028 A JP2001024028 A JP 2001024028A JP 11192452 A JP11192452 A JP 11192452A JP 19245299 A JP19245299 A JP 19245299A JP 2001024028 A JP2001024028 A JP 2001024028A
Authority
JP
Japan
Prior art keywords
wire bonding
terminal
platinum
wire
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11192452A
Other languages
English (en)
Inventor
Masatoshi Yamaguchi
正利 山口
Kiyoshi Yamanoi
清 山野井
Nobuo Miyadera
信生 宮寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP11192452A priority Critical patent/JP2001024028A/ja
Publication of JP2001024028A publication Critical patent/JP2001024028A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/85464—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 はんだがワイヤボンディング部まで流れる不
具合も無く、ワイヤボンディング強度も充分である実装
構造を提供する。また、金を省略することで、実装基板
のコスト低減を実現する。 【解決手段】 絶縁基板１と前記絶縁基板に設けられた
端子５と前記端子５にボンディングされたワイヤ８を備
えたワイヤボンディング接続構造において、前記端子の
ワイヤボンディング面をプラチニウムで構成する。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、電子部品等を実装
基板に搭載するワイヤボンディング接続構造に関する。
【０００２】
【従来の技術】実装基板の接続用として、金のワイヤを
端子部にボンディングするが、従来、チタンニウムの上
に、プラチニウムを形成し、最上層に金を形成した電極
取出部が用いられている。
【０００３】
【発明が解決しようとする課題】しかし、この構造だと
同一電極部にはんだが形成される場合、はんだと金表面
の濡れ性が良いため、電子部品を搭載する際、ワイヤボ
ンディング部にはんだが流れて不具合が生じる。また、
金は高価であるため、コストアップの原因となってい
た。本発明は、このような問題点を解決するワイヤボン
ディング接続構造を提供するものである。
【０００４】
【課題を解決するための手段】本発明は、前記問題を解
決するため、絶縁基板と前記絶縁基板に設けられた端子
と前記端子にボンディングされたワイヤを備えたワイヤ
ボンディング接続構造において、前記端子のワイヤボン
ディング面がプラチニウムであるワイヤボンディング接
続構造をとる。
【０００５】
【発明の実施の形態】以下図面に従って本発明を説明す
る。図１は一実施例を説明する断面図を示す。絶縁基板
１として５インチシリコンウェハをもちいた。この上に
チタニウム２を真空蒸着法で０．１μｍ成膜し、その上
にプラチニウム３を０．１μｍ成膜する。ここで真空蒸
着法として電子ビーム蒸着法を採用したが、本方法に限
らず、スパッタ法、抵抗加熱法でも良い。また、厚みは
チタニウムは０．０５〜０．５μｍ、プラチニウムは
０．０５〜０．５μｍ程度で良い。次にプラチニウム全
面にフォトレジスト７を形成し、フォトリソグラフによ
り、所定のパターンを形成する（図２）。スクリーン印
刷法などによっても良い。次にイオンミリングによっ
て、不要部分の金属を除去し（図３）、フォトレジスト
を除去することで所定のチタニウム／プラチニウムパタ
ーンが得られる（図４）。ここで、不要部分の金属除去
にイオンミリングによったがウェットエッチング、ドラ
イエッチングによっても良い。また、不要部分に予めレ
ジストを形成した後、チタニウム、プラチニウムを順次
真空蒸着法により形成し、レジストを除去することで不
要金属を除去するリフトオフ法によっても良い。この様
にして得られた電極パターンの電子部品搭載部にはんだ
４をリフトオフ法により形成し、電子部品を搭載する
（図５）。電極パターンのワイヤボンディング接続部と
なるワイヤボンディング端子部５に金ワイヤ８を超音波
接続した。その結果、強度は５．０ｇ以上、破壊箇所は
ボールネックで金が最上層である従来の強度と同等であ
った。この基板は電子部品を搭載するはんだがワイヤボ
ンディング部まで流れも少なく良好であった。
【０００６】
【発明の効果】本発明により、はんだがワイヤボンディ
ング部まで流れる不具合も無く、ワイヤボンディング強
度も充分である実装基板が得られた。また、金を省略す
ることで、実装基板のコスト低減を実現できた。
【図面の簡単な説明】
【図１】本発明の端子を得る工程を示す断面図。
【図２】本発明の端子を得る工程を示す断面図。
【図３】本発明の端子を得る工程を示す断面図。
【図４】本発明の端子を示す断面図。
【図５】本発明のワイヤボンディング接続構造を示す断
面図。
【符号の説明】
１ 絶縁基板 ２ チタニウム ３ プラチニウム ４ はんだ ５ ワイヤボンディング端子部 ７ フォトレジスト ８ 金ワイヤ
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮寺 信生 茨城県つくば市和台48 日立化成工業株式 会社総合研究所内 Ｆターム(参考） 5F044 AA02

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】絶縁基板と前記絶縁基板に設けられた端子
    と前記端子にボンディングされたワイヤを備えたワイヤ
    ボンディング接続構造において、前記端子のワイヤボン
    ディング面がプラチニウムであることを特徴とするワイ
    ヤボンディング接続構造。
JP11192452A 1999-07-07 1999-07-07 ワイヤボンディング接続構造 Pending JP2001024028A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11192452A JP2001024028A (ja) 1999-07-07 1999-07-07 ワイヤボンディング接続構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11192452A JP2001024028A (ja) 1999-07-07 1999-07-07 ワイヤボンディング接続構造

Publications (1)

Publication Number Publication Date
JP2001024028A true JP2001024028A (ja) 2001-01-26

Family

ID=16291546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11192452A Pending JP2001024028A (ja) 1999-07-07 1999-07-07 ワイヤボンディング接続構造

Country Status (1)

Country Link
JP (1) JP2001024028A (ja)

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