JP2000502508A - 半導体装置の形状記憶合金リフトピン - Google Patents

半導体装置の形状記憶合金リフトピン

Info

Publication number
JP2000502508A
JP2000502508A JP09523751A JP52375197A JP2000502508A JP 2000502508 A JP2000502508 A JP 2000502508A JP 09523751 A JP09523751 A JP 09523751A JP 52375197 A JP52375197 A JP 52375197A JP 2000502508 A JP2000502508 A JP 2000502508A
Authority
JP
Japan
Prior art keywords
substrate
lift pin
lifter
shape memory
lift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP09523751A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000502508A5 (enExample
Inventor
シャフルボサム,ポール,ケヴィン
グリフィン,クリストファー
Original Assignee
ラム リサーチ コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ラム リサーチ コーポレイション filed Critical ラム リサーチ コーポレイション
Publication of JP2000502508A publication Critical patent/JP2000502508A/ja
Publication of JP2000502508A5 publication Critical patent/JP2000502508A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914Differential etching apparatus including particular materials of construction

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP09523751A 1995-12-22 1996-12-18 半導体装置の形状記憶合金リフトピン Pending JP2000502508A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/577,520 US5669977A (en) 1995-12-22 1995-12-22 Shape memory alloy lift pins for semiconductor processing equipment
US08/577,520 1995-12-22
PCT/US1996/020028 WO1997023899A1 (en) 1995-12-22 1996-12-18 Shape memory alloy lift pins for semiconductor processing equipment

Publications (2)

Publication Number Publication Date
JP2000502508A true JP2000502508A (ja) 2000-02-29
JP2000502508A5 JP2000502508A5 (enExample) 2004-11-18

Family

ID=24309090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP09523751A Pending JP2000502508A (ja) 1995-12-22 1996-12-18 半導体装置の形状記憶合金リフトピン

Country Status (8)

Country Link
US (1) US5669977A (enExample)
EP (1) EP0868741B1 (enExample)
JP (1) JP2000502508A (enExample)
KR (1) KR100461996B1 (enExample)
CN (1) CN1209216A (enExample)
AT (1) ATE251800T1 (enExample)
DE (1) DE69630314T2 (enExample)
WO (1) WO1997023899A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3028462B2 (ja) * 1995-05-12 2000-04-04 東京エレクトロン株式会社 熱処理装置
US5885353A (en) 1996-06-21 1999-03-23 Micron Technology, Inc. Thermal conditioning apparatus
US5848670A (en) * 1996-12-04 1998-12-15 Applied Materials, Inc. Lift pin guidance apparatus
US6168668B1 (en) * 1998-11-25 2001-01-02 Applied Materials, Inc. Shadow ring and guide for supporting the shadow ring in a chamber
JP2000223549A (ja) * 1999-01-29 2000-08-11 Canon Inc 基板搬送装置、基板搬送方法、基板搬送用ハンド機構、灰化処理装置及び灰化処理方法
US6236300B1 (en) 1999-03-26 2001-05-22 R. Sjhon Minners Bistable micro-switch and method of manufacturing the same
US6958098B2 (en) * 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
US6572708B2 (en) * 2000-02-28 2003-06-03 Applied Materials Inc. Semiconductor wafer support lift-pin assembly
US6640432B1 (en) * 2000-04-12 2003-11-04 Formfactor, Inc. Method of fabricating shaped springs
US7324635B2 (en) 2000-05-04 2008-01-29 Telemaze Llc Branch calling and caller ID based call routing telephone features
US6422010B1 (en) * 2000-06-11 2002-07-23 Nitinol Technologies, Inc. Manufacturing of Nitinol parts and forms
KR100769826B1 (ko) * 2001-05-22 2007-10-23 엘지.필립스 엘시디 주식회사 리프터핀 유닛
TW588403B (en) * 2001-06-25 2004-05-21 Tokyo Electron Ltd Substrate treating device and substrate treating method
DE10134513A1 (de) * 2001-07-16 2003-01-30 Unaxis Balzers Ag Hebe-und Stützvorichtung
DE10232478A1 (de) * 2002-07-17 2004-02-12 Infineon Technologies Ag Waferhubvorrichtung
US6779963B2 (en) * 2002-11-21 2004-08-24 General Electric Company Apparatus and method to control force exerted on steam turbines by inlet pipes
EP1475670B1 (en) * 2003-05-09 2008-10-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1475667A1 (en) * 2003-05-09 2004-11-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100808374B1 (ko) * 2003-12-27 2008-02-27 동부일렉트로닉스 주식회사 반도체 제조설비의 포토레지스트 경화장치
CN100371783C (zh) * 2005-01-27 2008-02-27 中华映管股份有限公司 反应室的顶升栓装置
US7744730B2 (en) * 2005-04-14 2010-06-29 Tango Systems, Inc. Rotating pallet in sputtering system
WO2007062199A2 (en) * 2005-11-23 2007-05-31 Materials And Technologies Corporation Device and method for holding a substrate
US7867176B2 (en) * 2005-12-27 2011-01-11 Cordis Corporation Variable stiffness guidewire
US7785317B2 (en) 2006-03-29 2010-08-31 Codman & Shurtleff, Inc. Joined metal tubing and method of manufacture
US8690938B2 (en) * 2006-05-26 2014-04-08 DePuy Synthes Products, LLC Occlusion device combination of stent and mesh with diamond-shaped porosity
US8118859B2 (en) * 2006-05-26 2012-02-21 Codman & Shurtleff, Inc. Occlusion device combination of stent and mesh having offset parallelogram porosity
US7766935B2 (en) 2006-06-12 2010-08-03 Codman & Shurtleff, Inc. Modified headpiece for hydraulic coil deployment system
US7670353B2 (en) * 2006-06-12 2010-03-02 Codman & Shurtleff, Inc. Modified headpiece for hydraulic coil deployment system
US8585732B2 (en) * 2006-06-14 2013-11-19 DePuy Synthes Products, LLC Retrieval device with sidewall grippers
TWI456683B (zh) * 2007-06-29 2014-10-11 Ulvac Inc 基板搬送機器人
WO2010009050A2 (en) * 2008-07-15 2010-01-21 Applied Materials, Inc. Substrate lift pin sensor
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9105705B2 (en) 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8946058B2 (en) 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8643313B2 (en) * 2011-12-29 2014-02-04 General Electric Company Cyclotron actuator using a shape memory alloy
CN105830208B (zh) 2013-10-30 2019-07-16 株式会社尼康 基板保持装置、曝光装置及器件制造方法
US20150203955A1 (en) * 2013-11-07 2015-07-23 Carnegie Mellon University, A Pennsylvania Non-Profit Corporation Apparatus and method for making composition spread alloy films
CN105363627A (zh) * 2015-10-09 2016-03-02 昆山希盟自动化科技有限公司 Ccd对位的loca贴合机
CN106711080A (zh) * 2015-11-16 2017-05-24 北京北方微电子基地设备工艺研究中心有限责任公司 承载装置及半导体加工设备
US10784142B2 (en) 2018-01-09 2020-09-22 Varian Semiconductor Equipment Associates, Inc. Lift pin system for wafer handling
KR102420343B1 (ko) * 2019-11-04 2022-07-14 세메스 주식회사 공정챔버
US11335585B2 (en) * 2020-05-08 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Vacuum wafer chuck for manufacturing semiconductor devices
CN114864452B (zh) * 2022-05-31 2024-06-21 北京北方华创微电子装备有限公司 半导体热处理设备的冷却装置及半导体热处理设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
JPS5816078A (ja) * 1981-07-17 1983-01-29 Toshiba Corp プラズマエツチング装置
GB2154365A (en) * 1984-02-10 1985-09-04 Philips Electronic Associated Loading semiconductor wafers on an electrostatic chuck
US4665906A (en) * 1983-10-14 1987-05-19 Raychem Corporation Medical devices incorporating sim alloy elements
JPS60167346A (ja) * 1984-12-21 1985-08-30 Hitachi Ltd 真空処理装置
JPH0348204Y2 (enExample) * 1985-03-20 1991-10-15
JPS61271863A (ja) * 1985-05-27 1986-12-02 Toshiba Corp 半導体装置の外部リ−ド
US4615755A (en) * 1985-08-07 1986-10-07 The Perkin-Elmer Corporation Wafer cooling and temperature control for a plasma etching system
US4733632A (en) * 1985-09-25 1988-03-29 Tokyo Electron Limited Wafer feeding apparatus
US4743079A (en) * 1986-09-29 1988-05-10 The Boeing Company Clamping device utilizing a shape memory alloy
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5215619A (en) * 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
JPH0665742B2 (ja) * 1987-01-08 1994-08-24 株式会社ト−キン 形状記憶TiNiV合金の製造方法
US4790258A (en) * 1987-04-03 1988-12-13 Tegal Corporation Magnetically coupled wafer lift pins
DE3909630A1 (de) * 1989-03-23 1990-09-27 Daimler Benz Ag Spannwerkzeug zum kraftschluessigen und hochpraezisen spannen von werkstuecken
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
JP3039583B2 (ja) * 1991-05-30 2000-05-08 株式会社日立製作所 バルブ及びそれを用いた半導体製造装置
JPH06151366A (ja) * 1992-11-06 1994-05-31 Nippon Steel Corp ドライエッチング装置

Also Published As

Publication number Publication date
EP0868741B1 (en) 2003-10-08
KR100461996B1 (ko) 2005-04-08
DE69630314T2 (de) 2004-07-29
CN1209216A (zh) 1999-02-24
WO1997023899A1 (en) 1997-07-03
EP0868741A1 (en) 1998-10-07
KR19990076703A (ko) 1999-10-15
US5669977A (en) 1997-09-23
DE69630314D1 (de) 2003-11-13
ATE251800T1 (de) 2003-10-15

Similar Documents

Publication Publication Date Title
JP2000502508A (ja) 半導体装置の形状記憶合金リフトピン
US6866255B2 (en) Sputtered spring films with low stress anisotropy
TW561575B (en) Substrate support
JP3197220B2 (ja) 半導体ウエハ支持装置、半導体ウエハ支持方法およびそれに用いられるウエハ弾性支持体の製造方法
US7082684B2 (en) Intermetallic spring structure
Tong et al. The structure and properties of nanocrystalline Fe78B13Si9 alloy
JP2006196873A (ja) 高速加熱冷却ウェハ処理アセンブリ及びそれを製造する方法
KR101734547B1 (ko) 스위치 구조체 및 방법
EP1283446B1 (en) Workpiece stage of a resist curing device
KR100993463B1 (ko) 고순도 강자성 스퍼터 타겟
TW521348B (en) Process for improving the thickness uniformity of a thin oxide layer in semiconductor wafer fabrication
US20090176027A1 (en) metal structure and fabrication method thereof
CN110144484A (zh) 一种Cu-NbMoTaW合金及其制备方法
CN106167892B (zh) 一种双金属/陶瓷复合薄膜及其制备方法
Gong et al. Structures and defects induced during annealing of sputtered near‐equiatomic NiTi shape memory thin films
JP3918806B2 (ja) 被加熱物載置用ヒータ部材及び加熱処理装置
CN111139387B (zh) 一种力学性能优良的钒合金材料及其制备方法
JP3073067B2 (ja) X線露光用マスク及びその製造方法
CN110129701B (zh) 一种难熔金属再结晶退火的方法
JP4413360B2 (ja) 半導体ウエハの処理方法
JP2002141337A (ja) プラズマ処理装置及びプラズマ処理方法
JP2002025990A (ja) 半導体デバイスの製造装置および半導体デバイスの製造方法
CN114411105B (zh) 一种高质量金属纳米点阵列的制备方法
Ho et al. Sputter deposition of NiTi thin film exhibiting the SME at room temperatures
JPH08236509A (ja) 基板処理方法および基板処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20031218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20031218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040213

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060725

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061017

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20070605